Infineon Technologies - JANKC2N7434

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JANKC2N7434 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JANKC2N7434
Description N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 3 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Maximum Drain Current (ID): 31 A;
Datasheet JANKC2N7434 Datasheet
In Stock819
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 3 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 31 A
Maximum Drain Current (Abs) (ID): 31 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
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