30 W Power Field Effect Transistors (FET) 664

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
MTA3055E	Onsemi	N-CHANNEL	SINGLE	NO	30 W						ENHANCEMENT MODE	1			9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		9 A								e0
R8002KND3TL1	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4.8 A	4 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			4.2 ohm	1.6 A	SINGLE	R-PSSO-G2		DRAIN			TO-252
FS70KMJ-06F	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	280 A		70 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0083 ohm	70 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB
STF14N80K5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	270 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.445 ohm	12 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB		NOT SPECIFIED	NOT SPECIFIED	.8 pF
STF15N95K5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	950 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	124 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.5 ohm	12 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3			1 pF
STP9NK65ZFP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	25.6 A	200 mJ	6.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.2 ohm	6.4 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
MLP1N06CLG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR	NO	30 W	PLASTIC/EPOXY	SWITCHING	59 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	1.8 A	80 mJ	2.75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.75 ohm	2.75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3		260
MLP1N06CL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR	NO	30 W	PLASTIC/EPOXY	SWITCHING	59 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	1.8 A	80 mJ	2.75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.75 ohm	2.75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e0		235
NDF05N50ZH	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	130 mJ	3.5 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	1.5 ohm	5.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
2SK4200LS	Onsemi	N-CHANNEL	SINGLE	NO	30 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							4 A
NDF05N50ZG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	130 mJ	3.5 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	1.5 ohm	5.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
ATP201-TL-H	Onsemi	N-CHANNEL	SINGLE	YES	30 W							1			35 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Bismuth (Sn/Bi)		35 A			1					e6
FQD5N15TM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	17.2 A	55 mJ	4.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.8 ohm	4.3 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
NVTYS010N04CTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY		40 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	163 A	66 mJ	12 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.009 ohm	12 A	DUAL	R-PDSO-X5	1	DRAIN				e3	30	260	12 pF	AEC-Q101
2SK4198FG	Onsemi	N-CHANNEL	SINGLE	NO	30 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							4 A
ATP201	Onsemi	N-CHANNEL	SINGLE	YES	30 W						ENHANCEMENT MODE	1			35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							35 A
NDF04N60ZG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	120 mJ	4.8 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	2 ohm	3 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
FQU2N50BTU-WS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6.4 A	120 mJ	1.6 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	5.3 ohm	1.6 A	SINGLE	R-PSIP-T3					TO-251AA	e3
NVTYS010N04CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY		40 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	163 A	66 mJ	12 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0155 ohm	12 A	DUAL	R-PDSO-X5	1	DRAIN				e3	30	260	12 pF
TN8R04	Onsemi	N-CHANNEL	SINGLE	NO	30 W						ENHANCEMENT MODE	1			3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		125 Cel							3.5 A
NDF04N60ZH	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	120 mJ	4.8 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	2 ohm	3 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
BMS4007	Onsemi	N-CHANNEL	SINGLE	NO	30 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							60 A
2SK4196LS-1E	Onsemi	N-CHANNEL	SINGLE	NO	30 W							1			5 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN		5 A								e3
TN8R02	Onsemi	N-CHANNEL		NO	30 W						ENHANCEMENT MODE				3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		125 Cel							3 A
BMS4007-1E	Onsemi	N-CHANNEL	SINGLE	NO	30 W						ENHANCEMENT MODE	1			60 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin (Sn)		60 A								e3
2SK3097	Onsemi	N-CHANNEL	SINGLE	NO	30 W						ENHANCEMENT MODE	1			6.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR									6.5 A
2SK3280TP-FA	Onsemi	N-CHANNEL	SINGLE	YES	30 W						ENHANCEMENT MODE	1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							20 A
FDMC013P030Z	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	309 A	54 mJ	54 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2.4 W	150 Cel	SILICON	306 ns	-55 Cel	238 ns	NICKEL PALLADIUM GOLD SILVER	.007 ohm	54 A	DUAL	S-PDSO-N8	1	DRAIN				e4	30	260	1870 pF
2SJ652-1E	Onsemi	P-CHANNEL	SINGLE	NO	30 W							1			28 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel					MATTE TIN		28 A								e3
NTMFS4939NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	UNSPECIFIED	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	159 A	48 mJ	53 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.008 ohm	9.3 A	DUAL	R-XDSO-F5	1	DRAIN	Not Qualified			e3	NOT SPECIFIED	NOT SPECIFIED
NTTFS5C471NLTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY		40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	163 A	66 mJ	41 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0155 ohm	12 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	12 pF
2SK3280TP	Onsemi	N-CHANNEL	SINGLE	NO	30 W						ENHANCEMENT MODE	1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							20 A
NTMFS4939NT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	UNSPECIFIED	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	159 A	48 mJ	53 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin (Sn)	.008 ohm	9.3 A	DUAL	R-XDSO-F5	1	DRAIN	Not Qualified			e3	NOT SPECIFIED	NOT SPECIFIED
FQPF11P06	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	34.4 A	160 mJ	8.6 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.175 ohm	8.6 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
NVD5C478NLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	220 A	98 mJ	45 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0118 ohm	45 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260	25 pF	AEC-Q101
2SK3708	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	281 mJ	30 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	.042 ohm	30 A	SINGLE	R-PSFM-T3					TO-220AB
FQPF20N06	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	155 mJ	15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.06 ohm	15 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e3
NVD5C478NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	210 A	97 mJ	43 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0084 ohm	43 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260	24 pF	AEC-Q101
FDPF5N50NZU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	15 A	135 mJ	3.9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2 ohm	3.9 A	SINGLE	R-PSFM-T3	1	ISOLATED	Not Qualified		TO-220AB	e3
FDPF5N50NZF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	165 mJ	4.2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.75 ohm	4.2 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
2SK1469FA	Onsemi	N-CHANNEL	SINGLE	YES	30 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							8 A
STPLED656	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A		6 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					1.3 ohm	6 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB
STFI14N80K5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	270 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.445 ohm	12 A	SINGLE	R-PSIP-T3		ISOLATED			TO-281		NOT SPECIFIED	NOT SPECIFIED	.8 pF
STDLED656	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A		6 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					1.3 ohm	6 A	SINGLE	R-PSSO-G2		DRAIN			TO-252
STU27N3LH5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	108 A	50 mJ	27 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.028 ohm	27 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-251	e3	30	260
STLT19FI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A		10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	30 W	150 Cel	SILICON	110 ns			TIN LEAD	.15 ohm	10 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	LOW THRESHOLD	TO-220AB	e0			100 pF
STF5NK90Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	230 mJ	4.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2.5 ohm	4.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED	TO-220AB	e3
STU6NF10	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	200 mJ	6 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.25 ohm	6 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-251AA	e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.