30 W Power Field Effect Transistors (FET) 664

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BUK444-800A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

5.6 A

1.4 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

30 W

150 Cel

SILICON

60 ns

105 ns

6 ohm

1.4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

30 pF

PHX14NQ20T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

70 mJ

7.6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.23 ohm

7.6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e3

BUK474-60H

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

84 A

100 mJ

21 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

30 W

150 Cel

SILICON

120 ns

225 ns

.038 ohm

21 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

275 pF

BUK475-200A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

100 mJ

7.6 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

30 W

150 Cel

SILICON

90 ns

170 ns

.23 ohm

7.6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

80 pF

PHF14NQ20T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

70 mJ

7.6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.23 ohm

7.6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

BUK444-800B

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

4.8 A

1.2 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

30 W

150 Cel

SILICON

60 ns

105 ns

8 ohm

1.2 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

30 pF

PHX18NQ20T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

8.2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.18 ohm

8.2 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e3

PHX18NQ20T,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

8.2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.18 ohm

8.2 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e3

PHX4ND40E

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

190 mJ

2.7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

30 W

150 Cel

SILICON

1.8 ohm

2.7 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

FREDFET, FAST SWITCHING

TO-220AB

BUK475-100A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

56 A

100 mJ

14 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

30 W

150 Cel

SILICON

70 ns

240 ns

.08 ohm

14 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

150 pF

BUK446-1000B

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

6 A

1.5 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

30 W

150 Cel

SILICON

65 ns

210 ns

5 ohm

1.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

50 pF

PHX14NQ20T,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

70 mJ

7.6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.23 ohm

7.6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e3

PHX4N50E

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

11.6 A

280 mJ

2.9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

30 W

150 Cel

SILICON

105 ns

205 ns

TIN

1.5 ohm

2.9 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

e3

70 pF

PHX5N50E

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

510 mJ

4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

30 W

150 Cel

SILICON

130 ns

340 ns

TIN

.8 ohm

4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

e3

120 pF

BUK475-200B

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

100 mJ

7 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

30 W

150 Cel

SILICON

90 ns

170 ns

.28 ohm

7 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

80 pF

BUK475-100B

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

100 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

30 W

150 Cel

SILICON

70 ns

240 ns

.1 ohm

12 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

150 pF

PSMN010-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

30 W

ENHANCEMENT MODE

1

39 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

39 A

1

e3

30

260

BSPD14N06S2-80

Infineon Technologies

N-CHANNEL

SINGLE

YES

30 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

12 A

IRFY9120

Infineon Technologies

P-CHANNEL

SINGLE

NO

30 W

METAL

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

21 A

5.3 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.6 ohm

5.3 A

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-257AB

e0

ISC045N03L5S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

252 A

14 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.0064 ohm

53 A

DUAL

R-PDSO-F8

1

DRAIN

e3

49 pF

IEC-61249-2-21; IEC-68-1

IRSF3011S

Infineon Technologies

N-CHANNEL

SINGLE

YES

30 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

IRFY9120M

Infineon Technologies

P-CHANNEL

SINGLE

NO

30 W

METAL

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

21 A

5.3 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.6 ohm

5.3 A

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-257AB

e0

SPD15N06S2L-64

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

76 A

43 mJ

15 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.085 ohm

19 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-252

e0

SPD14N06S2-80

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

68 A

43 mJ

14 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.08 ohm

17 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

TO-252

e3

IAUZ18N10S5L420ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

72 A

11 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.055 ohm

18 A

DUAL

S-PDSO-N8

1

DRAIN

e3

9 pF

AEC-Q101

BSC0908NS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

34 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

200 A

10 mJ

49 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0127 ohm

14 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

e3

BSC100N03LSG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

176 A

10 mJ

44 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0142 ohm

13 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

IPP60R600P7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

17 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.6 ohm

6 A

SINGLE

R-PSFM-T3

TO-220AB

e3

IPAN80R280P7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

45 A

43 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.28 ohm

17 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

IPA60R450E6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

26 A

185 mJ

9.2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.45 ohm

9.2 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IPA80R360P7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

34 A

34 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.36 ohm

13 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

IRF7665S2TR1PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

UNSPECIFIED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

58 A

37 mJ

14.4 A

2

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.062 ohm

4.1 A

BOTTOM

R-XBCC-N2

1

DRAIN

Not Qualified

e3

IAUZ18N10S5L420

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

72 A

11 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.055 ohm

18 A

DUAL

S-PDSO-N8

1

DRAIN

e3

9 pF

AEC-Q101

BSZ100N03MSG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

160 A

15 mJ

40 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0114 ohm

10 A

DUAL

S-PDSO-N8

1

DRAIN

Not Qualified

e3

260

IPA60R520CP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

17 A

166 mJ

6.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.52 ohm

6.8 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IPD60R600P7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

16 A

17 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.6 ohm

6 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

IRFHM8235TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

240 A

41 mJ

50 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0077 ohm

16 A

DUAL

S-PDSO-N8

1

DRAIN

IPA180N10N3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

112 A

59 mJ

28 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.018 ohm

28 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

BSC0906NS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

252 A

14 mJ

63 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0064 ohm

18 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

e3

IPA50R520CP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

31 A

166 mJ

7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.52 ohm

7 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

BSC100N03MSG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

176 A

10 mJ

44 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.012 ohm

12 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

260

AUIRF7665S2TR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

UNSPECIFIED

AMPLIFIER

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

58 A

37 mJ

77 A

2

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.062 ohm

4.1 A

BOTTOM

R-XBCC-N2

1

DRAIN

Not Qualified

IRF7665S2TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

UNSPECIFIED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

58 A

37 mJ

14.4 A

2

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.062 ohm

4.1 A

BOTTOM

R-XBCC-N2

1

DRAIN

Not Qualified

e3

40

260

BSZ100N03LSG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

176 A

15 mJ

40 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.015 ohm

44 A

DUAL

S-PDSO-N8

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

260

32 pF

IRFH8334TR2PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

100 A

35 mJ

14 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.009 ohm

14 A

DUAL

R-PDSO-F5

1

DRAIN

HIGH RELIABILITY

e3

IPAN80R360P7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

34 A

34 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.36 ohm

13 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

IPA95R450P7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

950 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

43 A

29 mJ

14 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.45 ohm

14 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

IPA80R280P7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

45 A

43 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.28 ohm

17 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.