30 W Power Field Effect Transistors (FET) 664

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IPA95R450P7	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	950 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	43 A	29 mJ	14 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN	.45 ohm	14 A	SINGLE	R-PSFM-T3		ISOLATED		TO-220AB	e3
DMT10H009LFG-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	200 A	144.5 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.0085 ohm	13 A	DUAL	S-PDSO-N8		DRAIN			e3		260	16 pF	MIL-STD-202
DMT10H009LFG-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	200 A	144.5 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.0085 ohm	13 A	DUAL	S-PDSO-N8		DRAIN			e3		260	16 pF	MIL-STD-202
DMT3006LPB-13	Diodes Incorporated	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	100 A	28 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.0111 ohm	50 A	DUAL	R-PDSO-F8	3	DRAIN			e3			72 pF	MIL-STD-202
DMT6015LFV-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	60 A	14.5 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.016 ohm	9.5 A	DUAL	S-PDSO-F8	1	DRAIN			e3		260	20 pF	MIL-STD-202
TK35A08N1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	116 A	38 mJ	55 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.0122 ohm	55 A	SINGLE	R-PSFM-T3		ISOLATED		TO-220AB
TPCA8053-H(TE12L)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	45 A	16 mJ	15 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR			SILICON			.024 ohm	15 A	DUAL	S-PDSO-F5		DRAIN						90 pF
TPCC8A01-H(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	30 W						ENHANCEMENT MODE	1			21 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					21 A
TK380A65Y,S4X	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	38.8 A	96 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.38 ohm	9.7 A	SINGLE	R-PSFM-T3		ISOLATED		TO-220AB				2.5 pF
TPN14006NH(TE12L1)	Toshiba	N-CHANNEL	SINGLE	YES	30 W						ENHANCEMENT MODE	1			33 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					33 A
TPCC8A01-H(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	30 W						ENHANCEMENT MODE	1			21 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					21 A
TPCA8053-H(TE12LQM	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	45 A	16 mJ	15 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON			.024 ohm	15 A	DUAL	S-PDSO-F5		DRAIN						90 pF
TK7A60W	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A	92 mJ	7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.6 ohm	7 A	SINGLE	R-PSFM-T3		ISOLATED		TO-220AB
TPCA8052-H(TE12LQM	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	60 A	37 mJ	20 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON			.0131 ohm	20 A	DUAL	S-PDSO-F5		DRAIN						130 pF
TPCC8093(TE12L1)	Toshiba	N-CHANNEL	SINGLE	YES	30 W						ENHANCEMENT MODE	1			21 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					21 A
TK380A65Y	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	38.8 A	96 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.38 ohm	9.7 A	SINGLE	R-PSFM-T3		ISOLATED		TO-220AB				2.5 pF
TPCA8052-H(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	30 W						ENHANCEMENT MODE	1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					20 A
TK4A55DA	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	550 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14 A	139 mJ	3.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			2.45 ohm	3.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified
TK32A12N1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	120 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	110 A	48 mJ	60 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.0138 ohm	60 A	SINGLE	R-PSFM-T3		ISOLATED		TO-220AB
TK6A60W	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24.8 A	84 mJ	6.2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.75 ohm	6.2 A	SINGLE	R-PSFM-T3		ISOLATED		TO-220AB
TPN11006NL(TE12L1)	Toshiba	N-CHANNEL	SINGLE	YES	30 W						ENHANCEMENT MODE	1			37 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					37 A
TPCC8007(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	30 W						ENHANCEMENT MODE	1			27 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					27 A
TK8A25DA	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A	45 mJ	7.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.5 ohm	7.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	TO-220AB
TK35A08N1,S4X(S	Toshiba	N-CHANNEL	SINGLE	NO	30 W						ENHANCEMENT MODE	1			55 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					55 A
TK5A60W	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21.6 A	71 mJ	5.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.9 ohm	5.4 A	SINGLE	R-PSFM-T3		ISOLATED		TO-220AB				1.5 pF
TPCA8052-H(T2L1,VM	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	60 A	37 mJ	20 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON			.0131 ohm	20 A	DUAL	S-PDSO-F5		DRAIN						130 pF
TPN11006NL(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	30 W						ENHANCEMENT MODE	1			37 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					37 A
TK8A60W	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	105 mJ	8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.5 ohm	8 A	SINGLE	R-PSFM-T3		ISOLATED		TO-220AB
TK10A60W,S5VX(J	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	38.8 A	134 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.38 ohm	9.7 A	SINGLE	R-PSFM-T3		ISOLATED		TO-220AB				2.3 pF
TPCA8053-H(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	45 A	16 mJ	15 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR			SILICON			.024 ohm	15 A	DUAL	S-PDSO-F5		DRAIN						90 pF
TK10A60W	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	38.8 A	134 mJ	9.7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.38 ohm	9.7 A	SINGLE	R-PSFM-T3		ISOLATED		TO-220AB
TK5A60W,S4VX	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21.6 A	71 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.9 ohm	5.4 A	SINGLE	R-PSFM-T3		ISOLATED		TO-220AB				1.5 pF
TPN14006NH(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	30 W						ENHANCEMENT MODE	1			33 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					33 A
TPCC8093(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	30 W						ENHANCEMENT MODE	1			21 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					21 A
TK4A50D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	156 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			2 ohm	4 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified
TK3A60DA	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	180 mJ	2.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			2.8 ohm	2.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified
TPCA8A05-H(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	30 W						ENHANCEMENT MODE	1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					20 A
TPCA8053-H(TE12L1)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	45 A	16 mJ	15 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR			SILICON			.024 ohm	15 A	DUAL	S-PDSO-F5		DRAIN						90 pF
TPCA8107-H	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	30 A	26 mJ	7.5 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.037 ohm	7.5 A	DUAL	R-PDSO-F5		DRAIN	Not Qualified		e0
TK22A10N1,S4X(S	Toshiba	N-CHANNEL	SINGLE	NO	30 W						ENHANCEMENT MODE	1			52 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					52 A								30	260
TPCC8007(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	30 W						ENHANCEMENT MODE	1			27 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					27 A
TPCA8052-H(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	30 W						ENHANCEMENT MODE	1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					20 A
TK22A10N1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	102 A	48 mJ	52 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.0138 ohm	52 A	SINGLE	R-PSFM-T3		ISOLATED		TO-220AB
TPCA8040-H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	69 A	69 mJ	23 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.0108 ohm	23 A	DUAL	S-PDSO-F5		DRAIN	Not Qualified
TPCA8053-H(TE12L1,Q)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	45 A	16 mJ	15 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR			SILICON			.024 ohm	15 A	DUAL	S-PDSO-F5		DRAIN						90 pF
TPCA8052-H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	60 A	37 mJ	20 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON			.0131 ohm	20 A	DUAL	S-PDSO-F5		DRAIN	Not Qualified					130 pF
TK9A20DA	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	34 A	56 mJ	8.5 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.4 ohm	8.5 A	SINGLE	R-PSFM-T3		ISOLATED		TO-220AB
2SJ512	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	155 mJ	5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	30 W	150 Cel	SILICON			1.25 ohm	5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.