Toshiba - TK22A10N1,S4X(S

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TK22A10N1,S4X(S by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TK22A10N1,S4X(S
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Drain Current (Abs) (ID): 52 A; Maximum Operating Temperature: 150 Cel;
Datasheet TK22A10N1,S4X(S Datasheet
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 52 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Maximum Power Dissipation (Abs): 30 W
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 52 A
Peak Reflow Temperature (C): 260
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