Infineon Technologies - IRFY9120M

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IRFY9120M by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFY9120M
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Terminal Form: PIN/PEG; Transistor Element Material: SILICON;
Datasheet IRFY9120M Datasheet
In Stock250
NAME DESCRIPTION
Package Body Material: METAL
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 5.3 A
Maximum Pulsed Drain Current (IDM): 21 A
Sub-Category: Other Transistors
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 3
Maximum Power Dissipation (Abs): 30 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: S-MSFM-P3
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .6 ohm
JEDEC-95 Code: TO-257AB
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Additional Features: HIGH RELIABILITY
Maximum Drain Current (Abs) (ID): 5.3 A
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