Infineon Technologies - IRSF3011S

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IRSF3011S by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRSF3011S
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; No. of Elements: 1; Maximum Drain Current (ID): 5 A;
Datasheet IRSF3011S Datasheet
In Stock507
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 30 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 5 A
Maximum Drain Current (Abs) (ID): 5 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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