300 W Power Field Effect Transistors (FET) 924

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
IPB110P06LM	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	1616 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel	TIN	.011 ohm	100 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263	e3			260 pF
IRHNA54064	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	500 mJ	75 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.0056 ohm	75 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRFS3207TRRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	75 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	720 A	910 mJ	170 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN OVER NICKEL	.0045 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
IRHNA9064	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	192 A	500 mJ	48 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.048 ohm	48 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	HIGH RELIABILITY		e0
IRHNA58064	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	500 mJ	75 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.0056 ohm	75 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	HIGH RELIABILITY, RADIATION HARDENED		e0
IPP050N06NG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	400 A	810 mJ	100 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.005 ohm	100 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e3
IRFS3206TRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	840 A	170 mJ	210 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN OVER NICKEL	.003 ohm	120 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
IRHNA7160	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	204 A	500 mJ	51 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.045 ohm	51 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	AVALANCHE RATED		e0
IRF1324S-7PPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1640 A	230 mJ	429 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN OVER NICKEL	.001 ohm	240 A	SINGLE	R-PSSO-G6	1	DRAIN	Not Qualified			e3	30	260
IRFS3207ZTRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	75 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	670 A	170 mJ	170 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN OVER NICKEL	.0041 ohm	120 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
IPB036N12N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	120 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	720 A	900 mJ	180 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		TIN	.0036 ohm	180 A	SINGLE	R-PSSO-G6	1	DRAIN	Not Qualified		TO-263	e3		260
TK130F06K3(TE24L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	300 W						ENHANCEMENT MODE	1			130 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					130 A
TK150F04K3(TE24L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	300 W						ENHANCEMENT MODE	1			150 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					150 A
TK130F06K3(TE24L)	Toshiba	N-CHANNEL	SINGLE	YES	300 W						ENHANCEMENT MODE	1			130 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					130 A
TK150F04K3	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	450 A	234 mJ	150 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			.0021 ohm	150 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
TK150F04K3(TE24L)	Toshiba	N-CHANNEL	SINGLE	YES	300 W						ENHANCEMENT MODE	1			150 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					150 A
TK50F15J1(TE24L)	Toshiba	N-CHANNEL	SINGLE	YES	300 W						ENHANCEMENT MODE	1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					50 A
TK150F04K3L(TE24L)	Toshiba	N-CHANNEL	SINGLE	YES	300 W						ENHANCEMENT MODE	1			150 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					150 A
TK150F04K3L(TE24L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	300 W						ENHANCEMENT MODE	1			150 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					150 A
PM5050N	Renesas Electronics				300 W							1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					50 A
PM50502C	Renesas Electronics			NO	300 W	UNSPECIFIED			UNSPECIFIED	RECTANGULAR		2			50 A	8	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				.12 ohm	50 A	UPPER	R-XUFM-X8			Not Qualified
PM4550N	Renesas Electronics				300 W							1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					50 A
PM45502C	Renesas Electronics			NO	300 W	UNSPECIFIED			UNSPECIFIED	RECTANGULAR		2			50 A	8	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				.12 ohm	50 A	UPPER	R-XUFM-X8			Not Qualified
IXTM13N80	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	METAL	SWITCHING	800 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	52 A		13 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON			.8 ohm	13 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified		TO-204AA		NOT SPECIFIED	NOT SPECIFIED
IXTM24N50	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	METAL	SWITCHING	500 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	96 A		24 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON			.23 ohm	24 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified		TO-204AE		NOT SPECIFIED	NOT SPECIFIED
IXTZ27N40MB	Littelfuse	N-CHANNEL	SINGLE	NO	300 W						ENHANCEMENT MODE	1			27 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					27 A
IXTT10P60	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	3 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	1 ohm	10 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-268AA	e3	10	260	157 pF
IXTZ67N10MB	Littelfuse	N-CHANNEL	SINGLE	NO	300 W						ENHANCEMENT MODE	1			67 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					67 A
IXTZ35N25MA	Littelfuse	N-CHANNEL	SINGLE	NO	300 W						ENHANCEMENT MODE	1			35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					35 A
IXTQ10P50P	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A	1500 mJ	10 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	1 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED					42 pF
IXTT50P10	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	30 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.055 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-268AA	e3	10	260	733 pF
IXFM12N90	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	METAL	SWITCHING	900 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	48 A		12 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON			.9 ohm	12 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified	AVALANCHE RATED	TO-204AA		NOT SPECIFIED	NOT SPECIFIED
IXFM58N20	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	METAL	SWITCHING	200 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	232 A		58 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.04 ohm	58 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified		TO-204AE	e0
IXFM42N20	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	METAL	SWITCHING	200 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	168 A		42 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON			.06 ohm	42 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified		TO-204AE		NOT SPECIFIED	NOT SPECIFIED
IXFM26N50	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	METAL	SWITCHING	500 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	104 A		26 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.2 ohm	26 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified		TO-204AE	e0
IXFM75N10	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	METAL	SWITCHING	100 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	300 A		75 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON			.02 ohm	75 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified	AVALANCHE RATED	TO-204		NOT SPECIFIED	NOT SPECIFIED
IXFM67N10	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	METAL	SWITCHING	100 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	268 A		67 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON			.025 ohm	67 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified		TO-204AE		NOT SPECIFIED	NOT SPECIFIED
IXFM10N90	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	METAL	SWITCHING	900 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	40 A		10 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON			1.1 ohm	10 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified	AVALANCHE RATED	TO-204AA		NOT SPECIFIED	NOT SPECIFIED
IXFM24N50	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	METAL	SWITCHING	500 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	96 A		24 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON		TIN LEAD	.23 ohm	24 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified		TO-204AE	e0
IXFM21N50	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	METAL	SWITCHING	500 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	84 A		21 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON			.25 ohm	21 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified	AVALANCHE RATED	TO-204		NOT SPECIFIED	NOT SPECIFIED
IXFM11N80	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	METAL	SWITCHING	800 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	44 A		11 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON			.95 ohm	11 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified	AVALANCHE RATED	TO-204		NOT SPECIFIED	NOT SPECIFIED
IXFM10N100	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	METAL	SWITCHING	1000 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	40 A		10 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON			1.2 ohm	10 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified	AVALANCHE RATED	TO-204AA		NOT SPECIFIED	NOT SPECIFIED
IXFM13N80	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	METAL	SWITCHING	800 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	52 A		13 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON			.8 ohm	13 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified	AVALANCHE RATED	TO-204		NOT SPECIFIED	NOT SPECIFIED
IXFM15N60	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	METAL	SWITCHING	600 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	60 A		15 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON			.05 ohm	15 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified		TO-204AE		NOT SPECIFIED	NOT SPECIFIED
IXFM12N100	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	METAL	SWITCHING	1000 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	48 A		12 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON			1.05 ohm	12 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified	AVALANCHE RATED	TO-204AA		NOT SPECIFIED	NOT SPECIFIED
IXTQ32P20T	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	96 A	1000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.13 ohm	32 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED					105 pF
IXFM11N100	Littelfuse	N-CHANNEL	SINGLE	NO	300 W						ENHANCEMENT MODE	1			11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			Tin/Lead (Sn/Pb)		11 A								e0
IXTZ20N60MB	Littelfuse	N-CHANNEL	SINGLE	NO	300 W						ENHANCEMENT MODE	1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					20 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.