IRFI360 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRFI360
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain-Source On Resistance: .2 ohm; Maximum Pulsed Drain Current (IDM): 100 A;
Datasheet	IRFI360 Datasheet
In Stock	899

NAME	DESCRIPTION
Package Body Material:	METAL
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	25 A
Maximum Pulsed Drain Current (IDM):	100 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	3
Maximum Power Dissipation (Abs):	300 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-MSFM-P3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	PIN/PEG
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.2 ohm
Avalanche Energy Rating (EAS):	980 mJ
JEDEC-95 Code:	TO-259AA
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	400 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	25 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
899	-	-

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