40 W Power Field Effect Transistors (FET) 726

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
2SK2388	Toshiba	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel		Tin/Lead (Sn/Pb)		3.5 A							e0
2SK3798	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	345 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR			SILICON	TIN LEAD	3.5 ohm	4 A	SINGLE	R-PSFM-T3			Not Qualified		e0
2SK1746	Toshiba	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				2 A
2SK2543(T)	Toshiba	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				8 A
2SK2842	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	364 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON		.52 ohm	12 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
2SK2700(T)	Toshiba	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				3 A
2SK3051(SM)	Toshiba	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				45 A
TK16A60W	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	63.2 A	231 mJ	15.8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.19 ohm	15.8 A	SINGLE	R-PSFM-T3		ISOLATED		TO-220AB		30	260
2SK2311(SM)	Toshiba	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			25 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				25 A
UPA1730TP-AZ	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	22.5 mJ	15 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN BISMUTH	.015 ohm	28 A	DUAL	R-PDSO-G8			Not Qualified		e6	10	260
RJK5009DPP-00-T2	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A		20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.325 ohm	20 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	TO-220AB
2SJ214(L)	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.25 ohm	10 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified
FL14KM-9A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	42 A		14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.52 ohm	14 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	TO-220AB
H7N0603DL	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	.022 ohm	30 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		e0
HAF2025-90L	Renesas Electronics	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				15 A
RJF0605DPD-00-J3	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W							1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				20 A
FL10KM-12A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A		10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		1.1 ohm	10 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	TO-220AB
HAF2025-90STR	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				15 A
RJK6009DPP-00#T2	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	54 A		18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.48 ohm	18 A	SINGLE	R-PSFM-T3	1	ISOLATED	Not Qualified	TO-220AB
RJF0611JPD-00-J3	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W							1			30 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				30 A
HAF2025-90STL	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				15 A
2SJ247	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A		8 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	.45 ohm	8 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	TO-220AB	e0
H7N0603DSTL	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	.022 ohm	30 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		e0
NE55410GR	Renesas Electronics	N-CHANNEL		YES	40 W						ENHANCEMENT MODE				1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				1 A
2SJ539-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN COPPER	.36 ohm	10 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified	TO-220AB	e2
2SJ214(S)	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.25 ohm	10 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
2SJ117	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	4 A		2 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		7 ohm	2 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	TO-220AB
UPA2707TP-E2	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	76 A	36 mJ	42 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.0056 ohm	42 A	DUAL	R-PDSO-G8	1		Not Qualified
RJK5009DPP-00#T2	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A		20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.325 ohm	20 A	SINGLE	R-PSFM-T3	1	ISOLATED	Not Qualified	TO-220AB
UPA1730TP-E1-AZ	Renesas Electronics	P-CHANNEL	SINGLE	YES	40 W							1			28 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel				28 A									260
FL14KM-12A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	42 A		14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.75 ohm	14 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	TO-220AB
FS16KM-10	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A		16 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.56 ohm	16 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	TO-220AB
UPA1730TP	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	22.5 mJ	15 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	.015 ohm	28 A	DUAL	R-PDSO-G8			Not Qualified		e0
FS20KMA-5A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A		20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.2 ohm	20 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	TO-220AB
RJF0605JPD-00-J3	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W							1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				20 A
FL12KM-12A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A		12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.94 ohm	12 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	TO-220AB
2SJ247-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A		8 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN COPPER	.45 ohm	8 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified	TO-220AB	e2
H7N0603DSTL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN BISMUTH	.022 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		e6
RJF0611DPD-00-J3	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W							1			30 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				30 A
UPA2707TP-E2-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	76 A	36 mJ	42 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.0056 ohm	42 A	DUAL	R-PDSO-G8			Not Qualified			NOT SPECIFIED	NOT SPECIFIED
FL14KM-10A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	42 A		14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.64 ohm	14 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	TO-220AB
RJK6009DPP-00-T2	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	54 A		18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.48 ohm	18 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	TO-220AB
HAF2025-90S	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				15 A
UPA2707TP-E1-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	76 A	36 mJ	42 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.0056 ohm	42 A	DUAL	R-PDSO-G8			Not Qualified			NOT SPECIFIED	NOT SPECIFIED
H7N0603DL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN BISMUTH	.022 ohm	30 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		e6
2SJ539	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	.36 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	TO-220AB	e0
UPA2707TP-E1	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	76 A	36 mJ	42 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.0056 ohm	42 A	DUAL	R-PDSO-G8	1		Not Qualified
FS20KM-6	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A		20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.26 ohm	20 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	TO-220AB

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.