40 W Power Field Effect Transistors (FET) 726

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
FDMC86139P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	30 A	121 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	30 ns	-55 Cel	40 ns	NICKEL PALLADIUM GOLD	.067 ohm	4.4 A	DUAL	S-PDSO-N5	1	DRAIN				e4	30	260	15 pF
NTTFS5116PLTAG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	76 A	45 mJ	20 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.052 ohm	5.7 A	DUAL	S-PDSO-F8	1	DRAIN	Not Qualified			e3	30	260	84 pF
IRFR9120NTRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	26 A	100 mJ	6.6 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - with Nickel (Ni) barrier	.48 ohm	6.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE	TO-252AA	e3	30	260
STP80NF10FP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	152 A	350 mJ	37 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.015 ohm	38 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
VNP35N07-E	STMicroelectronics	N-CHANNEL	COMPLEX	NO	40 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			35 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON	800 ns		1350 ns	MATTE TIN	.035 ohm		SINGLE	R-PSFM-T3					TO-220AB	e3				AEC-Q101
STP15NK50ZFP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A	300 mJ	14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-50 Cel		MATTE TIN	.34 ohm	14 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	HIGH VOLTAGE	TO-220AB	e3
FDD3N50NZTM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	114 mJ	2.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2.5 ohm	2.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
NTTFS5116PLTWG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	76 A	45 mJ	20 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.052 ohm	5.7 A	DUAL	S-PDSO-F8	1	DRAIN	Not Qualified			e3	30	260	84 pF
STP55NF06FP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	340 mJ	32 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.018 ohm	50 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
IRF520PBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	37 A	200 mJ	8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.27 ohm	9.2 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3	30	260
FQD13N10LTM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	95 mJ	10 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.2 ohm	10 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
STF18NM80	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	68 A	600 mJ	17 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.295 ohm	17 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
VNP35N07TR-E	STMicroelectronics	N-CHANNEL	COMPLEX	NO	40 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			35 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON	800 ns		1350 ns	MATTE TIN	.035 ohm		SINGLE	R-PSFM-T3					TO-220AB					AEC-Q101
STD16NF06LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	96 A	200 mJ	24 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.085 ohm	24 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOW THRESHOLD, LOGIC LEVEL COMPATIBLE	TO-252AA	e3	30	260
STD10PF06T4	STMicroelectronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	125 mJ	10 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn)	.2 ohm	10 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
VNP35N07FI	STMicroelectronics	N-CHANNEL	COMPLEX	NO	40 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON	800 ns		1350 ns	MATTE TIN	.035 ohm		SINGLE	R-PSFM-T3					TO-220AB
RS1L151ATTB1	ROHM	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	60 A	16 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.0126 ohm	15 A	DUAL	R-PDSO-F8		DRAIN					NOT SPECIFIED	NOT SPECIFIED	345 pF
IRF620	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	110 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.8 ohm	5.2 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
SI7998DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	40 W	UNSPECIFIED	SWITCHING	30 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	60 A		30 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0093 ohm	15 A	DUAL	R-XDSO-C6	1	DRAIN	Not Qualified			e3
IRF620PBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	110 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.8 ohm	5.2 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3	30	260
RS1G201ATTB1	ROHM	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	80 A	31 mJ	78 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.0065 ohm	20 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	590 pF
STP10NK80ZFP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	290 mJ	9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.9 ohm	9 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
FDMC8321L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	100 A	86 mJ	49 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.0025 ohm	22 A	DUAL	S-PDSO-N5	1	DRAIN			MO-240BA	e3	30	260
STD25N10F7	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A			2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.035 ohm	25 A	SINGLE	R-PSSO-G2		DRAIN		BULK: 2500	TO-252		NOT SPECIFIED	NOT SPECIFIED	19 pF
STF42N65M5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	132 A	950 mJ	33 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.079 ohm	33 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
FDMC86320	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	50 A	60 mJ	22 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.0117 ohm	10.7 A	DUAL	S-PDSO-N5	1	DRAIN				e4	30	260
STF20N95K5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	950 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	62 A		15.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.33 ohm	15.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
IRLR7807ZPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	170 A	28 mJ	43 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.0138 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
STF40NF20	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A	230 mJ	40 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.045 ohm	40 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
IRFI740GPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	22 A	390 mJ	5.4 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.55 ohm	5.4 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3	30	260
STF45N65M5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A	810 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.078 ohm	35 A	SINGLE	R-PSFM-T3		ISOLATED		ULTRA LOW RESISTANCE	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
STP7NB60FP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28.8 A	580 mJ	4.1 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	39 ns			MATTE TIN	1.2 ohm	4.1 A	SINGLE	R-PSFM-T3	1	ISOLATED	Not Qualified	AVALANCHE RATED	TO-220AB	e3			21 pF
ATP106-TL-H	Onsemi	P-CHANNEL	SINGLE	YES	40 W							1			30 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN BISMUTH		30 A			1					e6	30	260
FDMC86261P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	150 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	20 A	121 mJ	9 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD SILVER	.16 ohm	2.7 A	DUAL	S-PDSO-N5	1	DRAIN				e4	30	260
MTD5P06VT4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A	125 mJ	5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.45 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	40	260
STD16NF06T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	AMPLIFIER	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	64 A	178 mJ	16 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn)	.07 ohm	16 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
FDPF8N50NZU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	26 A	80 mJ	6.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.2 ohm	6.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
ATP112-TL-H	Onsemi	P-CHANNEL	SINGLE	YES	40 W							1			25 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN BISMUTH		25 A			1					e6	30	260
2SK1460LS	Onsemi	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR							Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)		3.5 A
MTD20N06HDLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	200 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.07 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3		260
TSM6502CRRLG	Taiwan Semiconductor	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	96 A	24 mJ	24 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2 W	150 Cel	SILICON		-55 Cel			.034 ohm	5.4 A	DUAL	R-PDSO-F6	1	DRAIN					30	260	15 pF
FDMC6686P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	377 A		56 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	162 ns	-55 Cel	791 ns	MATTE TIN	.004 ohm	56 A	DUAL	S-PDSO-N5	1	DRAIN			MO-240BA	e3	30	260	2010 pF
DMN10H220LDV-7	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	SQUARE	ENHANCEMENT MODE	2	42 A	1.1 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.222 ohm	10.5 A	DUAL	S-PDSO-F8		DRAIN				e3		260	12 pF
BUZ73A	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	22 A	120 mJ	5.8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.6 ohm	5.5 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
BUZ73L	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A	120 mJ	7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.4 ohm	7 A	SINGLE	R-PSFM-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3
IRFR9120NTRRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	26 A	100 mJ	6.6 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - with Nickel (Ni) barrier	.48 ohm	6.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE	TO-252AA	e3	30	260
IXTP05N100	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	3 A	100 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			17 ohm	.75 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220AB				8 pF
IRF9620PBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14 A		3.5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	1.5 ohm	3.5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.