40 W Power Field Effect Transistors (FET) 726

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STF21N90K5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

68 A

170 mJ

17 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.299 ohm

17 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

TSM480P06CPROG

Taiwan Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

64 A

51 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-50 Cel

.048 ohm

20 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

30

260

65 pF

FDD5N50UTM_WS

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

275 mJ

3 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2 ohm

3 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

260

FDD5N50UTM-WS

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

275 mJ

3 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2 ohm

3 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

260

FDD6N20TM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

18 A

60 mJ

4.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.8 ohm

4.5 A

SINGLE

R-PSSO-G2

1

Not Qualified

e3

30

260

FDD8878

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

25 mJ

40 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

129 ns

-55 Cel

97 ns

MATTE TIN

.0185 ohm

36 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

MTD5P06V

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

18 A

125 mJ

5 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin/Lead (Sn/Pb)

.45 ohm

5 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

e0

NOT SPECIFIED

NOT SPECIFIED

MTD5P06V-1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

125 mJ

5 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.45 ohm

5 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

AVALANCHE RATED

e0

MTD5P06VT4

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

18 A

125 mJ

5 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin/Lead (Sn80Pb20)

.45 ohm

5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

e0

30

235

STD16NF06L-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

96 A

200 mJ

24 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.085 ohm

24 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

LOW THRESHOLD, LOGIC LEVEL COMPATIBLE

TO-251AA

e3

IRHNM57214SE

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

250 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

14.8 A

34 mJ

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

14.1 ns

-55 Cel

30.8 ns

1.7 ohm

3.7 A

BOTTOM

R-CBCC-N3

DRAIN

1.2 pF

MIL-STD-750; RH - 100K Rad(Si)

RS1E260ATTB1

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

104 A

52 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN COPPER

.0043 ohm

26 A

DUAL

R-PDSO-F8

DRAIN

e2

10

260

1110 pF

NTMFD5C466NLT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

177 A

72 mJ

52 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0126 ohm

14 A

DUAL

R-PDSO-F8

1

DRAIN

e3

30

260

13 pF

IRF120

Infineon Technologies

N-CHANNEL

SINGLE

NO

40 W

METAL

100 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

37 A

8 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.27 ohm

9.2 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

TO-204AA

e0

2SK2718

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

7.5 A

216 mJ

2.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

40 W

150 Cel

SILICON

6.4 ohm

2.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXTA05N100HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

SWITCHING

1000 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3 A

100 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

17 ohm

.75 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AB

e3

10

260

8 pF

NDP406BL

National Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

50 W

175 Cel

SILICON

270 ns

250 ns

TIN LEAD

.15 ohm

12 A

SINGLE

R-PSFM-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e0

100 pF

2SK1602

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8.4 A

2.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

5 ohm

2.8 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

2SK2543

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

312 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

40 W

150 Cel

SILICON

.85 ohm

8 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRF520

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

37 A

200 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.27 ohm

9.2 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

MTD3055EL1

National Semiconductor

N-CHANNEL

SINGLE

NO

40 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

40 W

150 Cel

SILICON

TIN LEAD

.18 ohm

12 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-251

e0

RCX300N20

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

140 A

396 mJ

30 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.0427 ohm

70 A

SINGLE

R-PSFM-T3

1

ISOLATED

TO-220AB

e1

10

260

TK16A60W5

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

63.2 A

231 mJ

15.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.23 ohm

15.8 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

4 pF

TK16A60W5,S4VX(M

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

63.2 A

231 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.23 ohm

15.8 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

4 pF

ZDX080N50

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

8 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.85 ohm

8 A

SINGLE

R-PSFM-T3

1

ISOLATED

TO-220AB

10

260

FQD13N10TM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

95 mJ

10 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.18 ohm

10 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

FQU13N10LTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

95 mJ

10 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.2 ohm

10 A

SINGLE

R-PSIP-T3

Not Qualified

TO-251

e3

IRF9Z20PBF

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

39 A

9.7 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.28 ohm

9.7 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

30

260

IRFI644GPBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

600 mJ

7.9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.28 ohm

7.9 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

30

260

SPA08N80C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

340 mJ

4.9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.65 ohm

8 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED, HIGH VOLTAGE

TO-220AB

e3

10

260

MLD1N06CLT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR

YES

40 W

PLASTIC/EPOXY

SWITCHING

59 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.8 A

80 mJ

2 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.75 ohm

1 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

40

260

MTD20N06HDL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

200 mJ

20 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN LEAD

.07 ohm

20 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

e0

235

FDU5N53TU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

530 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

256 mJ

4 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

90 ns

-55 Cel

116 ns

1.5 ohm

4 A

SINGLE

R-PSIP-T3

NOT SPECIFIED

NOT SPECIFIED

8 pF

FDU3N50NZTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

114 mJ

2.5 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

70 ns

-55 Cel

105 ns

Matte Tin (Sn) - annealed

2.5 ohm

2.5 A

SINGLE

R-PSIP-T3

TO-251AA

e3

5 pF

BMS3004

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

272 A

380 mJ

68 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

2 W

SILICON

.0114 ohm

68 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

MTB2N40ET4

Onsemi

N-CHANNEL

SINGLE

YES

40 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

2 A

e0

NTPF095N65S3H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

84 A

284 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.095 ohm

30 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

MTD9N10ET4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

27 A

40 mJ

9 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN LEAD

.25 ohm

9 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

e0

235

MTD20N06HDT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

60 mJ

20 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.045 ohm

20 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e0

235

MTD9N10E

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

27 A

40 mJ

9 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Tin/Lead (Sn/Pb)

.25 ohm

9 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

e0

30

235

BFL4007-1E

Onsemi

N-CHANNEL

SINGLE

NO

40 W

1

8.7 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

8.7 A

e3

MTD20N06HD-1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

60 mJ

20 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.045 ohm

20 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

e0

MTB2N40E

Onsemi

N-CHANNEL

SINGLE

YES

40 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN LEAD

2 A

e0

235

MLD2N06CLG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR

YES

40 W

PLASTIC/EPOXY

SWITCHING

58 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 mJ

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.4 ohm

2 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, OVERVOLTAGE CLAMPED PROTECTION

e3

40

260

MLD2N06CLT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR

YES

40 W

PLASTIC/EPOXY

SWITCHING

58 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 mJ

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.4 ohm

2 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, OVERVOLTAGE CLAMPED PROTECTION

e3

40

260

MTD2N50ET4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6 A

100 mJ

2 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3.6 ohm

2 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e0

MTD6N10E

Onsemi

N-CHANNEL

SINGLE

YES

40 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

-55 Cel

Tin/Lead (Sn/Pb)

6 A

e0

ATP216-TL-H

Onsemi

N-CHANNEL

SINGLE

YES

40 W

1

35 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

35 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.