40 W Power Field Effect Transistors (FET) 726

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
FDD5N50FTM-WS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14 A	257 mJ	3.5 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	90 ns	-55 Cel	116 ns	Matte Tin (Sn) - annealed	1.55 ohm	3.5 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260	7.5 pF
FDMC6696P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	335 A	54 mJ	75 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	54 ns	-55 Cel	781 ns	Matte Tin (Sn) - annealed	.0049 ohm	75 A	DUAL	S-PDSO-N5	1	DRAIN			MO-240BA	e3	30	260	1455 pF
FDMC4D9P20X8	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	335 A	54 mJ	75 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	54 ns	-55 Cel	781 ns	Matte Tin (Sn) - annealed	.0049 ohm	75 A	DUAL	S-PDSO-N8	1	DRAIN			MO-240BA	e3	30	260	1455 pF
2SK2635	Onsemi	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							3.5 A
IRFR220B	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A	65 mJ	4.6 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	124 ns	-55 Cel	160 ns		.8 ohm	4.6 A	SINGLE	R-PSSO-G2		DRAIN							13 pF
MTP2N40E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6 A	45 mJ	2 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	3.5 ohm	2 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0		235
2SK3815(SMP)	Onsemi	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			23 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							23 A
NVD5C464NT4G	Onsemi	N-CHANNEL	SINGLE	YES	40 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	310 A	136 mJ	59 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0058 ohm	59 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260	32 pF	AEC-Q101
FCP900N65S3Z	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	11.3 A		4.5 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.9 ohm	4.5 A	SINGLE	R-PSFM-T3					TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
MTD3N25E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9 A	45 mJ	3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	1.4 ohm	3 A	SINGLE	R-PSSO-G2			Not Qualified			e0
FDD5N50TM-WS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	256 mJ	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.4 ohm	4 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260
IRFU220B	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	65 mJ	4.6 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	124 ns	-55 Cel	160 ns		.8 ohm	4.6 A	SINGLE	R-PSIP-T3		DRAIN							13 pF
FQPF6N60C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	22 A	300 mJ	5.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2 ohm	5.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	FAST SWITCHING	TO-220AB	e3
FDD5N53TM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	530 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	256 mJ	4 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	90 ns	-55 Cel	116 ns		1.5 ohm	4 A	SINGLE	R-PSSO-G2		DRAIN			TO-252AA		NOT SPECIFIED	NOT SPECIFIED	8 pF
FDPF8N50NZF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A	93 mJ	7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1 ohm	7 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
FDMC86240	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	150 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	20 A	34 mJ	19 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.051 ohm	4.6 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified			e4	30	260
NTD5806NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	65 A	38 mJ	33 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.019 ohm	33 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
IRLS640A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	63 A	64 mJ	9.8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.18 ohm	9.8 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE		e3
2SK3835	Onsemi	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							50 A
NTD5C464NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	136 mJ	59 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0058 ohm	59 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260
2SK2379	Onsemi	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR									20 A
2SK3101	Onsemi	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR									11 A
NVD5806NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	67 A	39 mJ	33 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.019 ohm	33 A	SINGLE	R-PSSO-G2	1	DRAIN				e3				AEC-Q101
FQP2N40-F080	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	7.2 A	85 mJ	1.8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	5.8 ohm	1.8 A	SINGLE	R-PSFM-T3					TO-220AB	e3
NTD5806NG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	65 A	38 mJ	33 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.019 ohm	33 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified
MTD3N25ET4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9 A	45 mJ	3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	1.4 ohm	3 A	SINGLE	R-PSSO-G2			Not Qualified			e0
IRFU220BTU-AM002	Onsemi	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			4.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Matte Tin (Sn) - annealed		4.6 A								e3
2SK3819(SMP-FD)	Onsemi	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			14 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							14 A
2SK3815(SMP-FD)	Onsemi	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			23 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							23 A
2SK2970	Onsemi	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			13 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR									13 A
STP7N80ZFP	STMicroelectronics	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			6.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Matte Tin (Sn)		6.1 A								e3
STD4NB25-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	75 mJ	4 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					1.1 ohm	4 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-251
STD4NB25T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	75 mJ	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.1 ohm	4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252	e3
BUZ76	STMicroelectronics	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		3 A								e0
BUZ76A	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	100 mJ	2.6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	75 W	150 Cel	SILICON	145 ns		250 ns	MATTE TIN	2.5 ohm	3.8 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3			50 pF
STD4N20T4	STMicroelectronics	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Matte Tin (Sn)		4 A								e3
STF8NK100Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	320 mJ	6.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.85 ohm	6.5 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
BUZ71	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	68 A	50 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	85 W	175 Cel	SILICON	95 ns		145 ns	TIN LEAD	.1 ohm	17 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e0			150 pF
STP7NB80FP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	26 A	400 mJ	6.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.5 ohm	6.5 A	SINGLE	R-PSFM-T3	1	ISOLATED	Not Qualified	HIGH VOLTAGE	TO-220AB	e3
SGSP354	STMicroelectronics	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR							Tin/Lead (Sn/Pb)		1.5 A								e0
STF30NM50N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	108 A	900 mJ	27 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.115 ohm	27 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
STF34NM60N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	116 A	345 mJ	29 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.105 ohm	29 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
STP7NC80ZFP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	26 A	290 mJ	6.1 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.5 ohm	6.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
MTP3055A	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	26 A		12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.15 ohm	12 A	SINGLE	R-PSFM-T3			Not Qualified	FAST SWITCHING	TO-220AB	e0
STP7NA40FI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	26 A	210 mJ	4.1 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	135 ns			MATTE TIN	1 ohm	4.1 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED		e3			43 pF
STFI13N95K3	STMicroelectronics	N-CHANNEL	SINGLE	NO	40 W							1			10 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel							10 A
MTH6N60FI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14 A		3.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	1.2 ohm	3.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	HIGH VOLTAGE, FAST SWITCHING		e0
SGSP355	STMicroelectronics	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR							Tin/Lead (Sn/Pb)		1.5 A								e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.