40 W Power Field Effect Transistors (FET) 726

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
MTP5P06V	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	125 mJ	5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.45 ohm	5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e0		235
MTD10N10ELT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A	50 mJ	10 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.22 ohm	10 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3		260
MTD4N20E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	80 mJ	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	1.2 ohm	4 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
MTP10N10EL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	35 A	50 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.22 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0		235
MTD1N50E1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3 A	45 mJ	1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	5 ohm	1 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
MTD4N20ET4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	80 mJ	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	1.2 ohm	4 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
ATP202-TL-H	Onsemi	N-CHANNEL	SINGLE	YES	40 W							1			50 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN BISMUTH		50 A			1					e6	30	260
MTD1N50E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3 A	45 mJ	1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	5 ohm	1 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
MTD10N10EL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A	50 mJ	10 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.22 ohm	10 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e0		235
ATP212	Onsemi	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							35 A
MTD20N06HD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	60 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.045 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
MTD20N06HDL1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	200 mJ	20 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.07 ohm	20 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	AVALANCHE RATED		e0		235
2SK4085LS-1E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	141 mJ	11 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.43 ohm	11 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3
MTD9N10E1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	40 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.25 ohm	9 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED		e0		235
MTP1N50E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	3 A	45 mJ	1 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	5 ohm	1 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e0		235
MTD2N50E1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	100 mJ	2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	3.6 ohm	2 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
MLD1N06CLG	Onsemi	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1						FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel
MTD2N40E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	45 mJ	2 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	3.5 ohm	2 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
MTP10N10ELG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	35 A	50 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.22 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3		260
MLP2N06CLG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR	NO	40 W	PLASTIC/EPOXY	SWITCHING	58 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1		80 mJ		3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.4 ohm	2 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	ESD PROTECTED	TO-220AB	e3		260
FDU8878	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1		25 mJ	40 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	129 ns	-55 Cel	97 ns		.0185 ohm	11 A	SINGLE	R-PSIP-T3					TO-251AA		NOT SPECIFIED	NOT SPECIFIED
MTD1N50ET4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3 A	45 mJ	1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	5 ohm	1 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
MTD6N10ET4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A	50 mJ	6 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.4 ohm	6 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE ENERGY RATED		e0
MTD20N06HDLT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	200 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.07 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e0		235
MLD1N06CLT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR	YES	40 W	PLASTIC/EPOXY	SWITCHING	59 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.8 A	80 mJ	2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin/Lead (Sn80Pb20)	.75 ohm	1 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e0	NOT SPECIFIED	235
ATP212-TL-H	Onsemi	N-CHANNEL	SINGLE	YES	40 W							1			35 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN BISMUTH		35 A			1					e6	30	260
MLD2N06CLT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR	YES	40 W	PLASTIC/EPOXY	SWITCHING	58 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		80 mJ		2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin/Lead (Sn/Pb)	.4 ohm	2 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, OVERVOLTAGE CLAMPED PROTECTION		e0	NOT SPECIFIED	235
MTA1N60E	Onsemi	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Lead (Sn/Pb)		1 A								e0
MLD1N06CL	Onsemi	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1						FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel
MLD2N06CL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR	YES	40 W	PLASTIC/EPOXY	SWITCHING	58 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		80 mJ		2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin/Lead (Sn/Pb)	.4 ohm	2 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, OVERVOLTAGE CLAMPED PROTECTION		e0	NOT SPECIFIED	NOT SPECIFIED
MTD1N60ET4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3 A	45 mJ	1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	8 ohm	1 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
ATP206	Onsemi	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							40 A
MTD2N40ET4	Onsemi	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Lead (Sn/Pb)		2 A								e0
MTD1N60E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3 A	45 mJ	1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	8 ohm	1 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0		235
2SK4074LS	Onsemi	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			76 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							76 A
MLP2N06CL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR	NO	40 W	PLASTIC/EPOXY	SWITCHING	58 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1		80 mJ		3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.4 ohm	2 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	ESD PROTECTED	TO-220AB	e0		235
ATP206-TL-H	Onsemi	N-CHANNEL	SINGLE	YES	40 W							1			40 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Bismuth (Sn/Bi)		40 A			1					e6
BFL4037-1E	Onsemi	N-CHANNEL	SINGLE	NO	40 W							1			11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN		11 A								e3
MTD2N50E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	100 mJ	2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	3.6 ohm	2 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
MTD4N20E-1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	80 mJ	4 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	1.2 ohm	4 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
BFL4037	Onsemi	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							11 A
ATP202	Onsemi	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							50 A
MTD10N10ELT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A	50 mJ	10 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.22 ohm	10 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e0		235
2SK3819(SMP)	Onsemi	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			14 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							14 A
FQD17N08LTM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	51.6 A	100 mJ	12.9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.115 ohm	12.9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
FDMC86262P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	150 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	35 A	37 mJ	8.4 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	27 ns	-55 Cel	37 ns	NICKEL PALLADIUM GOLD	.307 ohm	8.4 A	DUAL	S-PDSO-N5	1	DRAIN				e4	30	260	2 pF
FDMC86520L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	60 A	79 mJ	22 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)	.0079 ohm	13.5 A	DUAL	S-PDSO-N5	1	DRAIN			MO-229	e4	NOT SPECIFIED	NOT SPECIFIED
2SK3836	Onsemi	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			33 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							33 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.