40 W Power Field Effect Transistors (FET) 726

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
2SK3402(0)-Z-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			36 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							36 A
2SJ602-ZJ	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	40 mJ	20 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.107 ohm	20 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB
2SK3712-Z-E2-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							9 A
2SK3993-ZK-E2-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			64 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							64 A
2SK3326B-S17-AY	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	10.7 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.85 ohm	10 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
2SK3712-Z-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							9 A									10	260
2SK1648(S)	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							15 A
RJK03E4DPA-00-J5A	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W							1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							45 A
RJK03E8DPA-00#J5A	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W							1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							40 A
2SK3404-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A		40 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.021 ohm	40 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		10	260
2SK3296-AZ	Renesas Electronics	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							35 A									10	260
RJK03M2DPA-00-J5A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	180 A	32.4 mJ	45 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0037 ohm	45 A	DUAL	R-PDSO-N5		DRAIN
2SK3639-ZK-E2-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			64 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							64 A
2SK3715	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A	450 mJ	75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin/Lead (Sn/Pb)	.0095 ohm	75 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e0
2SK3643-ZK-E2-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			64 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							64 A
IXTU05N100	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	3 A	100 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			17 ohm	.75 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE RATED	TO-251AA				8 pF
IXFP12N65X2M	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	300 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.31 ohm	12 A	SINGLE	R-PSFM-T3		ISOLATED		AVALANCHE RATED	TO-220AB				1 pF
IXFP34N65X2M	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	68 A	1000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.1 ohm	34 A	SINGLE	R-PSFM-T3		ISOLATED		AVALANCHE RATED	TO-220AB				2 pF
IXTP12N70X2M	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	300 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.3 ohm	12 A	SINGLE	R-PSFM-T3		ISOLATED		AVALANCHE RATED	TO-220AB				2 pF
IXTA05N100	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	1000 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3 A	100 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	17 ohm	.75 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AA	e3	10	260	8 pF
IXTA05N100HVTRL	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	1000 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3 A	100 mJ	.75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	17 ohm	.75 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AB	e3	10	260
IXTY05N100	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	1000 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3 A	100 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	17 ohm	.75 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-252AA	e3	10	260	8 pF
SSS6N70A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY		700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	560 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					1.8 ohm	4 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified
SSS4N80A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	250 mJ	2.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	115 ns		175 ns		4 ohm	2.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified						30 pF
SSU3055	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	26 A		12 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	80 ns		130 ns		.15 ohm	12 A	SINGLE	R-PSIP-T3			Not Qualified
SSS6N55	Samsung	N-CHANNEL	SINGLE	NO	40 W	PLASTIC/EPOXY		550 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			3.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					1.8 ohm	3.2 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB
SSS4N90AS	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	519 mJ	2.8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	120 ns		215 ns		3.7 ohm	2.8 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified						40 pF
SSR3055	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	26 A		12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	80 ns		130 ns		.15 ohm	12 A	SINGLE	R-PSSO-G2			Not Qualified
SSS4N90A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	414 mJ	2.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	115 ns		175 ns		5 ohm	2.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified						30 pF
SSU1N60	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	3 A		1 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	35 ns		90 ns		12 ohm	1 A	SINGLE	R-PSIP-T3			Not Qualified						20 pF
SFS9644	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	150 mJ	4.9 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.8 ohm	4.9 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified
SSP3055L	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	26 A		12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON					.18 ohm	12 A	SINGLE	R-PSFM-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
SSS3N90	Samsung	N-CHANNEL	SINGLE	NO	40 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					4.5 ohm	2 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB
SSS4N70	Samsung	N-CHANNEL	SINGLE	NO	40 W	PLASTIC/EPOXY		700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			2.3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					3.5 ohm	2.3 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB
SSS4N80	Samsung	N-CHANNEL	SINGLE	NO	40 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			2.3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					3.5 ohm	2.3 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB
SSS6N60	Samsung	N-CHANNEL	SINGLE	NO	40 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			3.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					1.8 ohm	3.2 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB
SSU1N55	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	550 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	3 A		1 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	35 ns		90 ns		12 ohm	1 A	SINGLE	R-PSIP-T3			Not Qualified						20 pF
IRFW614A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY		250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8.5 A	49 mJ	2.8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					2 ohm	2.8 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
SFS9640	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	25 A	258 mJ	6.2 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.5 ohm	6.2 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified
SSS4N80AS	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	314 mJ	2.8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	125 ns		220 ns		3 ohm	2.8 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified						42 pF
IRFS9540	Samsung	P-CHANNEL	SINGLE	NO	40 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	76 A	170 mJ	10.7 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	45 ns		32 ns		.2 ohm	10.7 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB
IRFS741	Samsung	N-CHANNEL	SINGLE	NO	40 W	PLASTIC/EPOXY	SWITCHING	350 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	157 mJ	5.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	62 ns		111 ns		.55 ohm	5.4 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB
IRFS9641	Samsung	P-CHANNEL	SINGLE	NO	40 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	120 mJ	6.2 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	45 ns		30 ns		.5 ohm	6.2 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB
IRFS9643	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	120 mJ	5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	45 ns		30 ns		.7 ohm	5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB
IRF121	Samsung	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		8 A								e0
IRFP323	Samsung	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							2.5 A
IRF9521	Samsung	P-CHANNEL	SINGLE	NO	40 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	380 mJ	6 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	40 W	150 Cel	SILICON	150 ns		115 ns		.6 ohm	6 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB
IRFP420	Samsung	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							2.5 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.