40 W Power Field Effect Transistors (FET) 726

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
2SK3993-AZ	Renesas Electronics	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			64 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				64 A									10	260
RJK03N5DPA-00#J5A	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W							1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				45 A
2SJ602	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	50 A	40 mJ	20 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.107 ohm	20 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
2SK3225-Z-E2	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			34 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				34 A
2SK3386(0)-Z-E2-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			34 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				34 A
2SK3225-Z-E1	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			34 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				34 A
2SK3712-Z-E2	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				9 A
2SK3455-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	103 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.6 ohm	12 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED			10	260
2SK1300-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN COPPER	.35 ohm	10 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB	e2
2SK3298	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A	37.5 mJ	7.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.75 ohm	7.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED	TO-220AB	e0
2SK3296	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	20 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A		35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Tin/Lead (Sn/Pb)	.019 ohm	35 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
2SK3457	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	73.8 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	2.2 ohm	5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED		e0
2SK1648(L)	Renesas Electronics	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				15 A
2SK3571-ZK	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	192 A		48 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.009 ohm	48 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263	e0
2SK2928	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A		15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.105 ohm	15 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
2SK2234	Renesas Electronics	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				8 A
2SK946	Renesas Electronics	N-CHANNEL	SINGLE	NO	40 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A		3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		5 ohm	3 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified
RJK0393DPA-00-J53	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	160 A		40 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Nickel/Palladium/Gold (Ni/Pd/Au)	.0059 ohm	40 A	DUAL	R-XDSO-N5		DRAIN	Not Qualified			e4
2SK3643-ZK-E2	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			64 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				64 A
RJK0353DPA	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	140 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0076 ohm	35 A	DUAL	R-PDSO-N8		DRAIN					NOT SPECIFIED	NOT SPECIFIED	135 pF
2SK3712(0)-Z-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				9 A
2SK3326-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	10.7 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.85 ohm	10 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB		10	260
2SK1300	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.35 ohm	10 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB
2SJ602-Z-AZ	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	40 mJ	20 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.107 ohm	20 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified				10	260
2SJ602-Z-E1-AZ	Renesas Electronics	P-CHANNEL	SINGLE	YES	40 W							1			20 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				20 A									NOT SPECIFIED	NOT SPECIFIED
2SK2476	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	9 A	37.8 mJ	3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	5 ohm	3 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED		e0
2SK3993-ZK-E2-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			64 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				64 A
2SK3712(0)-Z-E1-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				9 A
2SJ602-Z	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	40 mJ	20 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.107 ohm	20 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
2SJ602-AZ	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	50 A	40 mJ	20 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.107 ohm	20 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		10	260
2SK3483-Z-E2-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			28 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				28 A
2SK3296-ZK	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A		35 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Tin/Lead (Sn/Pb)	.019 ohm	35 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB	e0
2SK3225-Z-E2-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			34 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				34 A
RJK03E4DPA-00-J53	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	180 A		45 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Nickel/Palladium/Gold (Ni/Pd/Au)	.004 ohm	45 A	DUAL	R-PDSO-N5		DRAIN	Not Qualified			e4
2SK3404-ZK	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A		40 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.021 ohm	40 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB
2SK3639-ZK-E1	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			64 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				64 A
2SK3483-Z-E1-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			28 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				28 A
2SK3296-ZK-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W							1			35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				35 A										260
RJK0353DPA-01#J0B	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	140 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0076 ohm	35 A	DUAL	R-PDSO-N8		DRAIN					NOT SPECIFIED	NOT SPECIFIED	135 pF
RJK0323JPD-00-J3	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W							1			30 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				30 A
2SK3571-S	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	40 W	PLASTIC/EPOXY	SWITCHING	20 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	192 A		48 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.009 ohm	48 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified
2SK928	Renesas Electronics	N-CHANNEL	SINGLE	NO	40 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		1.4 ohm	5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified
2SK3571-AZ	Renesas Electronics	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			48 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				48 A									10	260
2SK3483(0)-Z-E2-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			28 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				28 A
2SK3715(0)-AZ	Renesas Electronics	N-CHANNEL	SINGLE	NO	40 W							1			75 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				75 A									NOT SPECIFIED	NOT SPECIFIED
2SK946(A)	Renesas Electronics	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				3 A
2SK3386(0)-Z-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			34 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				34 A
2SK3402(0)-Z-E2-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			36 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				36 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.