400 W Power Field Effect Transistors (FET) 80

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IXTH24N50L

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

50 A

1500 mJ

24 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.3 ohm

24 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AD

e3

10

260

IXFH52N30P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

150 A

1000 mJ

52 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.066 ohm

52 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247

e3

10

260

MRF176GU

TE Connectivity

N-CHANNEL

400 W

ENHANCEMENT MODE

16 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

16 A

IXTH12N100L

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

25 A

1500 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.3 ohm

12 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AD

e3

10

260

IXTP50N25T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

130 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.06 ohm

50 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

60 pF

IXTT30N50L2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

400 W

PLASTIC/EPOXY

AMPLIFIER

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

1500 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.215 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-268AA

e3

10

260

115 pF

STW77N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

276 A

2000 mJ

69 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.038 ohm

69 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

IXTH20N50D

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

50 A

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.33 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AA

e3

10

260

IXTT75N10L2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

400 W

PLASTIC/EPOXY

AMPLIFIER

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

225 A

2500 mJ

75 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.021 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-268AA

e3

10

260

350 pF

IXTQ52N30P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

150 A

1000 mJ

52 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.066 ohm

52 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

e3

IXTH75N10L2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

400 W

PLASTIC/EPOXY

AMPLIFIER

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

225 A

2500 mJ

75 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.021 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

350 pF

IXTT20N50D

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

400 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

50 A

20 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.33 ohm

20 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-268AA

e3

10

260

IXTA130N15X4

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

400 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

800 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.008 ohm

130 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AA

e3

10

260

3.5 pF

IXTH30N50L2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

400 W

PLASTIC/EPOXY

AMPLIFIER

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.215 ohm

30 A

SINGLE

R-PSFM-T3

DRAIN

TO-247AD

e3

10

260

115 pF

STE38NB50

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

152 A

1200 mJ

38 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.13 ohm

38 A

UPPER

R-PUFM-X4

1

ISOLATED

Not Qualified

40

245

TSD22N80V

STMicroelectronics

400 W

1

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

22 A

SGS35MA050D1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

140 A

35 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.16 ohm

35 A

UPPER

R-PUFM-X2

ISOLATED

Not Qualified

FAST SWITCHING

TO-240

SGS150MA010D1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

600 A

150 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.009 ohm

150 A

UPPER

R-PUFM-X2

ISOLATED

Not Qualified

FAST SWITCHING

TO-240

STE16N100

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

1000 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

64 A

16 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.7 ohm

16 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

SGS100MA010D1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

400 A

120 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.014 ohm

120 A

UPPER

R-PUFM-X2

ISOLATED

Not Qualified

FAST SWITCHING

TO-240

SGS30MA050D1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

120 A

30 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.2 ohm

30 A

UPPER

R-PUFM-X2

ISOLATED

Not Qualified

FAST SWITCHING

TO-240

TSD200N05F

STMicroelectronics

400 W

1

200 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

200 A

TSD200N05V

STMicroelectronics

400 W

1

200 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

200 A

TSD22N80F

STMicroelectronics

400 W

1

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

22 A

STE38NB50F

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

152 A

1200 mJ

38 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.14 ohm

38 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

STE15N100

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

1000 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

60 A

15 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.77 ohm

15 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

STE22N80

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

800 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

88 A

22 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.4 ohm

22 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

STW77N65DM5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

260 A

65 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.043 ohm

65 A

SINGLE

R-PSFM-T3

TO-247

STW25N95K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

950 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

88 A

450 mJ

22 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.36 ohm

22 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

BLL1214-250R,112

NXP Semiconductors

N-CHANNEL

SINGLE

400 W

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

BSM214A

Infineon Technologies

400 W

1

125 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

125 A

BSM224A

Infineon Technologies

400 W

1

81 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

81 A

BSM204A

Infineon Technologies

400 W

1

200 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

200 A

BUZ342

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

460 mJ

60 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.01 ohm

60 A

SINGLE

R-PSFM-T3

Not Qualified

TO-218AA

e0

BSM254F

Infineon Technologies

400 W

1

35 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

35 A

BSM294F

Infineon Technologies

400 W

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

18 A

BSM284F

Infineon Technologies

400 W

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

20 A

BSM244F

Infineon Technologies

400 W

1

45 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

45 A

TK50J60U(Q)

Toshiba

N-CHANNEL

SINGLE

NO

400 W

ENHANCEMENT MODE

1

50 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

50 A

TK62J60W

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

247 A

698 mJ

61.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.04 ohm

61.8 A

SINGLE

R-PSFM-T3

DRAIN

TK50J60U(F)

Toshiba

N-CHANNEL

SINGLE

NO

400 W

ENHANCEMENT MODE

1

50 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

50 A

TK62N60W

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

247 A

698 mJ

61.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.04 ohm

61.8 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

NOT SPECIFIED

NOT SPECIFIED

TK62J60W(Q)

Toshiba

N-CHANNEL

SINGLE

NO

400 W

ENHANCEMENT MODE

1

61.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

61.8 A

TK40J60T(Q)

Toshiba

N-CHANNEL

SINGLE

NO

400 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

40 A

TK40J60T

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

576 mJ

40 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.08 ohm

40 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TK40J60T(F)

Toshiba

N-CHANNEL

SINGLE

NO

400 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

40 A

PM50100K

Renesas Electronics

NO

400 W

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

100 A

8

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 ohm

100 A

UPPER

R-XUFM-X8

Not Qualified

PM45100K

Renesas Electronics

NO

400 W

PLASTIC/EPOXY

UNSPECIFIED

RECTANGULAR

1

100 A

7

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 ohm

100 A

UPPER

R-PUFM-X7

Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.