43 W Power Field Effect Transistors (FET) 69

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRFR220NTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	46 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Matte Tin (Sn) - with Nickel (Ni) barrier	.6 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
IRF510SPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	100 mJ	5.6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.54 ohm	5.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e3
NTMFS5H610NLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	222 A	175 mJ	44 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.01 ohm	44 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260
NTMFS4937NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	UNSPECIFIED	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	210 A	68.5 mJ	17.1 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.007 ohm	10.2 A	DUAL	R-XDSO-F5	1	DRAIN	Not Qualified			e3	30	260
IPG20N10S4L35ATMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY		100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	60 mJ	20 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.035 ohm	20 A	DUAL	R-PDSO-F8	1					e3			60 pF	AEC-Q101
IRF510STRLPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	100 mJ	5.6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.54 ohm	5.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3
IRF9510PBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	43 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	200 mJ	4 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	1.2 ohm	4 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e3	30	260
IPG20N06S2L65AATMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY		55 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	40 mJ	20 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.065 ohm	20 A	DUAL	R-PDSO-F8	1					e3			50 pF	AEC-Q101
SVD5867NLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	85 A	18 mJ	22 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.05 ohm	22 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260		AEC-Q101
FDD7N20TM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A	62.5 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.69 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
IRFR220NTRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	46 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.6 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
IRF9Z14STRLPBF	Vishay Intertechnology	P-CHANNEL	SINGLE	YES	43 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	140 mJ	6.7 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Matte Tin (Sn)	.5 ohm	6.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	260
IRLZ14SPBF	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	43 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			10 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.2 ohm	10 A	SINGLE	R-PSSO-G2	3	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263AB
IRLZ14PBF	Vishay Intertechnology	N-CHANNEL	SINGLE	NO	43 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.2 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3
IRLZ14STRRPBF	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	43 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	68 mJ	10 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.2 ohm	10 A	SINGLE	R-PSSO-G2	3	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263AB
IRF510STRRPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	100 mJ	5.6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.54 ohm	5.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3
IRFU220NPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	43 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	46 mJ	5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.6 ohm	5 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-251AA	e3	30	260
IRFR220NTR	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	46 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Tin/Lead (Sn/Pb)	.6 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e0	30	240
IRFR220NTRL	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	46 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Tin/Lead (Sn/Pb)	.6 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e0	30	240
IRFR220NTRR	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	46 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Tin/Lead (Sn/Pb)	.6 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e0	30	240
IRF9510STRLPBF	Vishay Intertechnology	P-CHANNEL	SINGLE	YES	43 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	200 mJ	4 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	1.2 ohm	4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	260
NVD5867NLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	85 A	18 mJ	22 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.05 ohm	6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
IRF9510SPBF	Vishay Intertechnology	P-CHANNEL	SINGLE	YES	43 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			4 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	1.2 ohm	4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	260
NTMFS4936NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	UNSPECIFIED	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	235 A	96.8 mJ	79 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0055 ohm	11.6 A	DUAL	R-XDSO-F5	1	DRAIN	Not Qualified			e3	30	260
IRF512	Microchip Technology	N-CHANNEL	SINGLE	NO	43 W						ENHANCEMENT MODE	1			4.9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Lead (Sn/Pb)		4.9 A								e0
FDD8647L	Onsemi	N-CHANNEL	SINGLE	YES	43 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	33 mJ	52 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.009 ohm	14 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
FDPF045N10A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	43 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	268 A	637 mJ	67 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Matte Tin (Sn) - annealed	.0045 ohm	67 A	SINGLE	R-PSFM-T3		ISOLATED		ULTRA-LOW RESISTANCE	TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
FQPF19N20C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	43 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	76 A	433 mJ	19 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.17 ohm	19 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
IRFZ14PBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	43 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	47 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.2 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3	30	260
SIRA10BDP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	150 A	20 mJ	60 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	55 ns	-55 Cel	70 ns		.0036 ohm	60 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	68 pF
FCPF099N65S3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	43 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	75 A	145 mJ	30 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.099 ohm	30 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
NVMFS027N10MCLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY		100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	124 A		27 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.027 ohm	27 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	3.7 pF	AEC-Q101
IRF610	Onsemi	N-CHANNEL	SINGLE	NO	43 W						ENHANCEMENT MODE	1			3.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN LEAD		3.3 A								e0		235
FQPF16N25C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	43 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	62.4 A	410 mJ	15.6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.27 ohm	15.6 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
NTMFS4936NCT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	235 A	96.8 mJ	79 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0048 ohm	11.6 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260
NTMFS4936NCT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	235 A	96.8 mJ	79 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.0048 ohm	11.6 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260
NTMFS4936NT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	UNSPECIFIED	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	235 A	96.8 mJ	79 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0055 ohm	11.6 A	DUAL	R-XDSO-F5	1	DRAIN	Not Qualified			e3	30	260
NTMFS4937NT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	UNSPECIFIED	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	210 A	68.5 mJ	17.1 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.007 ohm	10.2 A	DUAL	R-XDSO-F5	1	DRAIN	Not Qualified			e3	30	260
FDMD8630	Onsemi	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	1178 A	726 mJ	167 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	53 ns	-55 Cel	144 ns		.001 ohm	167 A	DUAL	R-PDSO-N8		SOURCE			MO-240AA		NOT SPECIFIED	NOT SPECIFIED	300 pF
ISC0803NLS	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	148 A	21 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	.0169 ohm	37 A	DUAL	R-PDSO-F8		DRAIN				e3			12 pF
IPLK80R1K2P7	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY	SWITCHING	800 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	11 A	10 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	1.2 ohm	4.5 A	DUAL	R-PDSO-F8		DRAIN				e3
IRF613	Infineon Technologies	N-CHANNEL	SINGLE	NO	43 W	PLASTIC/EPOXY		150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6.5 A		2.6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN OVER NICKEL	2.4 ohm	2.6 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
BSC106N025SG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY	SWITCHING	25 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	120 A	80 mJ	30 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0106 ohm	13 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3
IPG20N10S4L-35	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY		100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	60 mJ	20 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.035 ohm	20 A	DUAL	R-PDSO-F8	1					e3			60 pF	AEC-Q101
IPB60R360CFD7	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A	29 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	.36 ohm	7 A	SINGLE	R-PSSO-G2	1	DRAIN		HIGH RELIABILITY	TO-263AB	e3
IPG20N06S2L-65	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	43 W	PLASTIC/EPOXY		55 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	40 mJ	20 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.065 ohm	20 A	DUAL	R-PDSO-F8	1		Not Qualified			e3		260		AEC-Q101
IRF611	Infineon Technologies	N-CHANNEL	SINGLE	NO	43 W	PLASTIC/EPOXY		150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A		3.3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN OVER NICKEL	1.5 ohm	3.3 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
BSF134N10NJ3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	43 W	METAL	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	160 A	70 mJ	40 A	2	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				SILVER NICKEL	.0134 ohm	9 A	BOTTOM	R-MBCC-N2	3	DRAIN				e4

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.