IRF613 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRF613
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 43 W; JESD-30 Code: R-PSFM-T3; Qualification: Not Qualified;
Datasheet	IRF613 Datasheet
In Stock	1,128

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	2.6 A
Maximum Pulsed Drain Current (IDM):	6.5 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	MATTE TIN OVER NICKEL
No. of Terminals:	3
Maximum Power Dissipation (Abs):	43 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	2.4 ohm
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	150 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	2.6 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,128	$0.314	$354.192

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