45 W Power Field Effect Transistors (FET) 524

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRLR024NTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A	68 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - with Nickel (Ni) barrier	.08 ohm	17 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED	TO-252AA	e3	30	260
FQD5P20TM	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14.8 A	330 mJ	3.7 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.4 ohm	3.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
FQD1N80TM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4 A	90 mJ	1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	20 ohm	1 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
IRFR024NTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	71 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - with Nickel (Ni) barrier	.075 ohm	17 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260
RJK0651DPB-00#J5	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	11.7 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.018 ohm	25 A	SINGLE	R-PSSO-G4		DRAIN				e4			100 pF
RJK0651DPB-00-J5	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	11.7 mJ	25 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.018 ohm	25 A	SINGLE	R-PSSO-G4		DRAIN	Not Qualified			e4			100 pF
STD1NK80ZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	5 A	50 mJ	1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	16 ohm	1 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252	e3	30	260	6.7 pF
SQJA68EP-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	17 A	4 mJ	14 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	25 ns	-55 Cel	40 ns		.092 ohm	14 A	SINGLE	R-PSSO-G4		DRAIN					NOT SPECIFIED	NOT SPECIFIED	20 pF	AEC-Q101
IRFZ24NSPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	71 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	3.8 W	175 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.07 ohm	17 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED			30	260	65 pF
STP75NF75FP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	75 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	700 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.011 ohm	80 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
AUIRFZ24NSTRL	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	71 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.07 ohm	17 A	DUAL	R-PDSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AB	e3	30	260
IRLU024NPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	72 A	68 mJ	17 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.08 ohm	17 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED	TO-251AA	e3	30	260
IRFZ24NSTRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	71 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	3.8 W	175 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.07 ohm	17 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260	65 pF
BUK9Y113-100E,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					TIN		12 A			1					e3	30	260
STP16NF06L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	64 A	127 mJ	16 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.1 ohm	16 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
IRFZ24NSTRL	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	71 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	45 W	175 Cel	SILICON				TIN LEAD	.07 ohm	17 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-263AB	e0
IRFZ24NSTRRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	71 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	3.8 W	175 Cel	SILICON		-55 Cel			.07 ohm	17 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED			30	260	65 pF
FQD4P25TM-WS	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12.4 A	280 mJ	3.1 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	2.1 ohm	3.1 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260
FQD4P25TM_WS	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12.4 A	280 mJ	3.1 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2.1 ohm	3.1 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260
IRFZ24NLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	68 A	71 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	3.8 W	175 Cel	SILICON		-55 Cel			.07 ohm	17 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE RATED	TO-262AA				65 pF
AUIRFR024NTRL	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	71 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.075 ohm	17 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-252AA	e3
AUIRFZ24NS	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	71 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - with Nickel (Ni) barrier	.07 ohm	17 A	DUAL	R-PDSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AB	e3	30	260
AUIRFR024N	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	71 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.075 ohm	17 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-252AA	e3
IRFZ24N,127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	68 A	30 mJ	17 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.07 ohm	17 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	ESD PROTECTED	TO-220AB	e3
RJK0305DPB-00-J0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.013 ohm	30 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified					260
IRF9Z24NSTRLPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A	96 mJ	12 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.175 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY		e3	30	260
IRFZ24NL	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	68 A	71 mJ	17 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	45 W	175 Cel	SILICON				TIN LEAD	.07 ohm	17 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-262AA	e0
BUK7Y72-80EX	NXP Semiconductors	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			16 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							16 A
AOD1N60	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4 A	30 mJ	1.3 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	26 ns	-50 Cel	49 ns		9 ohm	1.3 A	SINGLE	R-PSSO-G2		DRAIN			TO-252		NOT SPECIFIED	NOT SPECIFIED	2.2 pF
STD2N95K5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	950 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	50 mJ	2 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			5 ohm	2 A	SINGLE	R-PSSO-G2		DRAIN			TO-252		NOT SPECIFIED	NOT SPECIFIED
AUIRFR024NTR	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	71 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.075 ohm	17 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-252AA	e3
FDD8447L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	153 mJ	54 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0085 ohm	21 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
STP16NF06	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	64 A	130 mJ	16 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.1 ohm	16 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
STP20NM60FP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	650 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.29 ohm	20 A	SINGLE	R-PSFM-T3	1	ISOLATED	Not Qualified		TO-220AB	e3	30	245
IRLZ24NPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	72 A	68 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.075 ohm	18 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-220AB	e3
IRFR024NTRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	71 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.075 ohm	17 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260
BUK9Y43-60E,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			22 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					TIN		22 A			1					e3	30	260
STD4NK50ZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	120 mJ	3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	2.7 ohm	3 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252AA	e3	30	260
TK6A80E,S4X(S	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	308 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					1.7 ohm	6 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB				10 pF
IRL2703PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	96 A	77 mJ	24 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.04 ohm	24 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED	TO-220AB	e3
SQJ415EP-T1_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	31.2 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	30 ns	-55 Cel	140 ns		.014 ohm	30 A	SINGLE	R-PSSO-G4		DRAIN							320 pF	AEC-Q101
STU3N62K3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	620 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10.8 A	100 mJ	2.7 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	2.5 ohm	2.7 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-251AA	e3	30	260
AUIRFZ24NSTRR	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	71 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.07 ohm	17 A	DUAL	R-PDSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AB	e3
IRFZ24NSTRR	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	71 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	45 W	175 Cel	SILICON				TIN LEAD	.07 ohm	17 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-263AB	e0
IRL3715ZSPBF	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	44 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - with Nickel (Ni) barrier	.011 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
AUIRFIZ44N	Infineon Technologies	N-CHANNEL	SINGLE	NO	45 W						ENHANCEMENT MODE	1			31 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							31 A
STB16NF06LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	64 A	127 mJ	16 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.1 ohm	16 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
STD1NK80Z-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	5 A	50 mJ	1 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	16 ohm	1 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-251	e3	30	260	6.7 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.