45 W Power Field Effect Transistors (FET) 524

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
2SK3826	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	104 A	80 mJ	26 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	1.75 W		SILICON				Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	.08 ohm	26 A	SINGLE	R-PSFM-T3					TO-220AB
STPLED524	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY		525 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14 A	110 mJ	4 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			2.6 ohm	4 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB
STU2N80K5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	60.5 mJ	2 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			4.5 ohm	2 A	SINGLE	R-PSIP-T3					TO-251		NOT SPECIFIED	NOT SPECIFIED
STULED624	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY		620 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14 A	100 mJ	4 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					2.5 ohm	4 A	SINGLE	R-PSIP-T3		DRAIN			TO-251
STD9N10L-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	25 mJ	9 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.27 ohm	9 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-251	e0
STP7NE10L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A	40 mJ	7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.45 ohm	7 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
STD4N52K3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	525 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	110 mJ	2.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	2.6 ohm	2.5 A	SINGLE	R-PSIP-T3	1			ULTRA-LOW RESISTANCE	TO-251	e3	30	260
STD9N10-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	30 mJ	9 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.27 ohm	9 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-251AA	e3
STDLED524	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY		525 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14 A	110 mJ	4 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			2.6 ohm	4 A	SINGLE	R-PSSO-G2		DRAIN			TO-252
STD4NK50ZD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	120 mJ	3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	2.7 ohm	3 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252	e3	30	260
STU8NM50N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	140 mJ	5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.79 ohm	5 A	SINGLE	R-PSIP-T3	1				TO-251	e3	30	260
STD4NK50Z-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	120 mJ	3 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2.7 ohm	3 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-251AA	e3
STD4NK50ZD-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	120 mJ	3 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2.7 ohm	3 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-251	e3	30	260
STU4N52K3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	525 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	110 mJ	2.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	2.6 ohm	2.5 A	SINGLE	R-PSFM-T3	1			ULTRA-LOW RESISTANCE	TO-220AB	e3	30	260
STU7NM60N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	119 mJ	5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.9 ohm	5 A	SINGLE	R-PSIP-T3			Not Qualified		TO-251		NOT SPECIFIED	NOT SPECIFIED
STULED524	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY		525 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14 A	110 mJ	4 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			2.6 ohm	4 A	SINGLE	R-PSIP-T3		DRAIN			TO-251
STU5N60M2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14 A	80 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	15 ns	-55 Cel	85 ns	MATTE TIN	1.4 ohm	3.5 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE ENERGY RATED	TO-251AA	e3			.75 pF
STP7NM50N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	100 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.78 ohm	5 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
STU7LNM60N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	119 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.99 ohm	4.5 A	SINGLE	R-PSIP-T3		DRAIN			TO-251				1.1 pF
STU1N120	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	1200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	2 A	300 mJ	.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					38 ohm	.5 A	SINGLE	R-PSIP-T3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
STP7NM60N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	119 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.9 ohm	5 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
STP7NA60FI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	29 A	260 mJ	4.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1 ohm	4.4 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e3
STU2N95K5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	950 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	50 mJ	2 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			5 ohm	2 A	SINGLE	R-PSIP-T3					TO-251		NOT SPECIFIED	NOT SPECIFIED
STDLED624	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY		620 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14 A	100 mJ	4 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					2.5 ohm	4 A	SINGLE	R-PSSO-G2		DRAIN			TO-252
STP7NE10	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A	40 mJ	7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.4 ohm	7 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
STU2LN60K3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	80 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					4.5 ohm	2 A	SINGLE	R-PSIP-T3		DRAIN			TO-251		NOT SPECIFIED	NOT SPECIFIED	3.5 pF
STD9N10LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	25 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.27 ohm	9 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED	TO-252	e0
STPLED624	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY		620 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14 A	100 mJ	4 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					2.5 ohm	4 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB
STD9N10T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	30 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.27 ohm	9 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252AA	e0
STD25NE03LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.03 ohm	20 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252	e3
STD1NC70Z-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	5.6 A	60 mJ	1.4 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					8.5 ohm	1.4 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-251
STB16NF06L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	64 A	127 mJ	16 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.1 ohm	16 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOW THRESHOLD, LOGIC LEVEL COMPATIBLE	TO-263AB	e3
STD8N10L1	STMicroelectronics	N-CHANNEL	SINGLE	NO	45 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							8 A
STD1NC70ZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	700 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	5.6 A	60 mJ	1.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	8.5 ohm	1.4 A	SINGLE	R-PSSO-G2			Not Qualified		TO-252	e3
STD29NF03L-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	116 A	120 mJ	29 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.02 ohm	29 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-251
STD25NE03L-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A		20 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.03 ohm	20 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-251
STD3PS25	STMicroelectronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A		3 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2.8 ohm	3 A	SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e3
STP6NA80FI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	23 A	165 mJ	3.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.9 ohm	3.4 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e3
STD38NF03LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	152 A		38 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.0215 ohm	38 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252AA	e0
STP3N62K3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	620 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10.8 A	100 mJ	2.7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2.5 ohm	2.7 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
STD2NK70Z-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6.4 A	110 mJ	1.6 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	7 ohm	1.6 A	SINGLE	R-PSIP-T3	1		Not Qualified	AVALANCHE RATED	TO-251	e3	30	260
STP6NM60N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18.4 A	65 mJ	4.6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.92 ohm	4.6 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
STP60N05FI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	700 mJ	32 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.02 ohm	32 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e3
STD12N05LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A	30 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.15 ohm	12 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252	e3
STP45N10FI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A	400 mJ	24 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.035 ohm	24 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e3
STD1NB60T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4 A	150 mJ	1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	8.5 ohm	1 A	SINGLE	R-PSSO-G2			Not Qualified	AVALANCHE RATED	TO-252	e0
STD2NC50-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8.8 A	140 mJ	2.2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	4 ohm	2.2 A	SINGLE	R-PSIP-T3			Not Qualified		TO-251	e0
STD12N05	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A	30 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.15 ohm	12 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252AA	e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.