45 W Power Field Effect Transistors (FET) 524

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
STP8NM50N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	140 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.79 ohm	5 A	SINGLE	R-PSFM-T3					TO-220AB	e3
STP50N05LFI	STMicroelectronics	N-CHANNEL	SINGLE	NO	45 W						ENHANCEMENT MODE	1			27 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					MATTE TIN		27 A								e3
STP4NK50Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	120 mJ	3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2.7 ohm	3 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
STP55N05LFI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	220 A	500 mJ	30 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.023 ohm	30 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE		e3
STD3PS25-1	STMicroelectronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A		3 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2.8 ohm	3 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-251AA	e3
STD1NB50-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	5.6 A	40 mJ	1.4 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	9 ohm	1.4 A	SINGLE	R-PSIP-T3			Not Qualified		TO-251AA	e0
STD3NK50Z-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	9.2 A	120 mJ	2.3 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	3.3 ohm	2.3 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-251AA	e3
STP50N06FI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	400 mJ	27 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.028 ohm	27 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
STD12N06L-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	30 mJ	12 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.15 ohm	12 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-251
STP4NA80FI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	80 mJ	2.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	3 ohm	2.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e0
STD2NC50T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8.8 A	140 mJ	2.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	4 ohm	2.2 A	SINGLE	R-PSSO-G2			Not Qualified		TO-252	e0
STD19NE06LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	76 A	50 mJ	19 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.06 ohm	19 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252AA	e0
STD2NA50T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8.8 A	25 mJ	2.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	4 ohm	2.2 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3
STD5NK40ZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	130 mJ	3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	15.2 ns	-55 Cel	33.5 ns	Matte Tin (Sn)	1.8 ohm	3 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE ENERGY RATED	TO-252AA	e3	30	260	11.5 pF
STF20NM50D	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	700 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.25 ohm	20 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
STD2NC50	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8.8 A	140 mJ	2.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	4 ohm	2.2 A	SINGLE	R-PSSO-G2			Not Qualified		TO-252	e3
STD12N05-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	30 mJ	12 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.15 ohm	12 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-251AA	e0
STD3NB30	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12.8 A	190 mJ	3.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	2 ohm	3.2 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252AA	e0
STD12N05T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A	30 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.15 ohm	12 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252AA	e0
STF20NM60A	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.29 ohm	20 A	SINGLE	R-PSFM-T3	1	ISOLATED	Not Qualified		TO-220AB	e3
STB7ANM60N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	119 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.9 ohm	5 A	SINGLE	R-PSSO-G2		DRAIN		BULK: 1000	TO-263AB		NOT SPECIFIED	NOT SPECIFIED	1.1 pF	AEC-Q101
STD3N25	STMicroelectronics	N-CHANNEL	SINGLE	YES	45 W							1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					MATTE TIN	2 ohm	3 A					Not Qualified			e3
STD2NK70ZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	700 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6.4 A	110 mJ	1.6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	7 ohm	1.6 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED	TO-252AA	e3	30	260
STD12N06	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A	30 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.15 ohm	12 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252AA	e3
STP6NA60FI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	26 A	215 mJ	3.9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	45 W	150 Cel	SILICON	175 ns			TIN LEAD	1.2 ohm	3.9 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED	TO-220AB	e0			55 pF
STD3N25T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	20 mJ	3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2 ohm	3 A	SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e3
STD3N25-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	20 mJ	3 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin/Lead (Sn/Pb)	2 ohm	3 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-251AA	e0
STF22NM60	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	650 mJ	22 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.25 ohm	22 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
STD12N06-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	30 mJ	12 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Tin/Lead (Sn/Pb)	.15 ohm	12 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-251AA	e0
STP22NM50FP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	650 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.215 ohm	20 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
STD12N06T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A	30 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.15 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3
STP5N60M2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14 A	80 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	15 ns	-55 Cel	85 ns		1.4 ohm	3.5 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE ENERGY RATED	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	.75 pF
STP9NA50FI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	35 A	390 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.8 ohm	5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e3
STF4N52K3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	525 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	110 mJ	2.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2.6 ohm	2.5 A	SINGLE	R-PSSO-G2				ULTRA-LOW RESISTANCE	TO-252	e3
STD3NK50ZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9.2 A		2.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	3.5 ohm	2.3 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252AA	e3	30	260
STD5NK40Z-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	130 mJ	3 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	15.2 ns	-55 Cel	33.5 ns	TIN	1.8 ohm	3 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	AVALANCHE ENERGY RATED	TO-251AA	e3			11.5 pF
STP60N06FI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	600 mJ	32 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.02 ohm	32 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e3
STD8N10L	STMicroelectronics	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					Matte Tin (Sn)		8 A								e3
STD6NM60N-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18.4 A	65 mJ	4.6 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.92 ohm	4.6 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-251	e3
STD3NK50Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9.2 A	120 mJ	2.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	3.3 ohm	2.3 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252AA	e3	30	260
STB6NM60N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18.4 A	65 mJ	4.6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.92 ohm	4.6 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE ENERGY RATED	TO-263AB	e3	30	245
STF20NM60D	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	700 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.29 ohm	20 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
STD2N50-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	20 mJ	2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin/Lead (Sn/Pb)	5.5 ohm	2 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-251AA	e0
STD36NH02L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	200 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.026 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3
STD7NM50N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	100 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.78 ohm	5 A	SINGLE	R-PSSO-G2	1		Not Qualified			e3
STP14NF06	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A	50 mJ	14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.12 ohm	14 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e0
STP60NE06L-16FP	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A	400 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.016 ohm	35 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	LOW THRESHOLD	TO-220AB	e3
STD12N06LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A	30 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.15 ohm	12 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252	e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.