45 W Power Field Effect Transistors (FET) 524

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	JEDEC-95 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
TPCA8042(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			45 A
TK090A65Z	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	265 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.09 ohm	30 A	SINGLE	R-PSFM-T3	ISOLATED		TO-220AB			2 pF
TK13A50D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	52 A	390 mJ	13 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.4 ohm	13 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		30	260
TK20A25D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	120 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.1 ohm	20 A	SINGLE	R-PSFM-T3	ISOLATED		TO-220AB
TPCA8004-H(TE12L,Q	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	120 A	208 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.0062 ohm	40 A	DUAL	S-PDSO-F8	DRAIN					255 pF
TPH7R506NH(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			55 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel			55 A
TK8A65D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	416 mJ	8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.84 ohm	8 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
TPCA8042(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			45 A
TK17A65U	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	34 A	186 mJ	17 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.26 ohm	17 A	SINGLE	R-PSFM-T3	ISOLATED		TO-220AB
TK11A50D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	264 mJ	11 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.6 ohm	11 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
TK13A45D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	52 A	372 mJ	13 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.46 ohm	13 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
TK7A90E,S4X(S	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21 A	235 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	2 ohm	7 A	SINGLE	R-PSFM-T3	ISOLATED		TO-220AB			10 pF
TPCA8101	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	120 A	208 mJ	40 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.015 ohm	40 A	DUAL	R-PDSO-F8		Not Qualified		NOT SPECIFIED	NOT SPECIFIED
TPCA8025(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			40 A
TPCA8025(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			40 A
TPCA8A02-H(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			34 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			34 A
TPCA8A02-H(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			34 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			34 A
TPCA8011-H(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			40 A
TK70A06J1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	280 A	751 mJ	70 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.0076 ohm	70 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		NOT SPECIFIED	NOT SPECIFIED
TPCA8A04-H(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			44 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			44 A
TPCA8049-H(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			28 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			28 A
TK18A30D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	72 A	126 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.139 ohm	18 A	SINGLE	R-PSFM-T3	ISOLATED		TO-220AB
TPCA8007-H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	40 A	351 mJ	20 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.047 ohm	20 A	DUAL	R-PDSO-F5	DRAIN	Not Qualified
TPCA8050-H(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			24 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			24 A
TPCA8011-H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	120 A	208 mJ	40 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.0075 ohm	40 A	DUAL	R-PDSO-F8		Not Qualified		NOT SPECIFIED	NOT SPECIFIED
TPCA8009-H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	150 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	14 A	34 mJ	7 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.35 ohm	7 A	DUAL	R-PDSO-F5	DRAIN	Not Qualified
TPCA8047-H(TE12L)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	96 A	95 mJ	32 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.0085 ohm	32 A	DUAL	S-PDSO-F5	DRAIN					200 pF
TPCA8051-H(TE12L1,Q)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			28 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel			28 A
TK6A80E	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	308 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	1.7 ohm	6 A	SINGLE	R-PSFM-T3	ISOLATED		TO-220AB			10 pF
TK090A65Z,S4X	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	265 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.09 ohm	30 A	SINGLE	R-PSFM-T3	ISOLATED		TO-220AB			2 pF
TK100A08N1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	568 A	278 mJ	100 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.0032 ohm	100 A	SINGLE	R-PSFM-T3	ISOLATED		TO-220AB
TK12A45D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	292 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.52 ohm	12 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
TK10A55D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	550 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	264 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.72 ohm	10 A	SINGLE	R-PSFM-T3
TK6A65D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	281 mJ	6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	1.11 ohm	6 A	SINGLE	R-PSFM-T3		Not Qualified				5 pF
TK100A06N1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	584 A	413 mJ	100 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.0027 ohm	100 A	SINGLE	R-PSFM-T3	ISOLATED		TO-220AB
TPCA8006-H(TE12L1)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel			18 A
TK72A12N1,S4X(S	Toshiba	N-CHANNEL	SINGLE	NO	45 W						ENHANCEMENT MODE	1			100 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			100 A
TK12A53D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	525 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	378 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.58 ohm	12 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
TPCA8048-H(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			35 A
TPCA8011-H(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			40 A
TK25A20D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A	118 mJ	25 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.07 ohm	25 A	SINGLE	R-PSFM-T3	ISOLATED		TO-220AB			21 pF
TPCA8016-H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	75 A	45 mJ	25 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.026 ohm	25 A	DUAL	R-PDSO-F5	DRAIN	Not Qualified
TPCA8A08-H(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			38 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			38 A
TK11A60D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	396 mJ	11 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.65 ohm	11 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
TK17A25D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	68 A	153 mJ	17 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.15 ohm	17 A	SINGLE	R-PSFM-T3	ISOLATED		TO-220AB
TPCA8A04-H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	UNSPECIFIED	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	132 A	252 mJ	44 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.0041 ohm	44 A	DUAL	S-XDSO-F5	DRAIN	Not Qualified
TK20A60U	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	144 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.19 ohm	20 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
TK25A20D,S5X	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A	118 mJ	25 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	.07 ohm	25 A	SINGLE	R-PSFM-T3	ISOLATED		TO-220AB			21 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.