45 W Power Field Effect Transistors (FET) 524

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
2SK2508(Q)	Toshiba	N-CHANNEL	SINGLE	NO	45 W						ENHANCEMENT MODE	1			13 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				13 A
TK31A60W	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	123 A	437 mJ	30.8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.088 ohm	30.8 A	SINGLE	R-PSFM-T3		ISOLATED		TO-220AB
2SK3742(Q)	Toshiba	N-CHANNEL	SINGLE	NO	45 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				5 A
2SK1653	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A		45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	Tin/Lead (Sn/Pb)	.035 ohm	45 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		e0
2SK3994	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	487 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	.105 ohm	20 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		e0
2SK2985	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A	701 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	45 W	150 Cel	SILICON	Tin/Lead (Sn/Pb)	.01 ohm	45 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		e0
2SK2312	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A	701 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	45 W	150 Cel	SILICON		.025 ohm	45 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
2SK2508(F)	Toshiba	N-CHANNEL	SINGLE	NO	45 W						ENHANCEMENT MODE	1			13 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				13 A
2SK2508	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	52 A	148 mJ	13 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	45 W	150 Cel	SILICON		.25 ohm	13 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
NP22N055SHE-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			22 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel				22 A
NP22N055HLE-AY	Renesas Electronics	N-CHANNEL	SINGLE	NO	45 W							1			22 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel				22 A								NOT SPECIFIED	NOT SPECIFIED
NP22N055SLE-E1-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			22 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel				22 A
NP22N055ILE	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	55 A	25 mJ	22 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	TIN LEAD	.051 ohm	22 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	TO-252AA	e0
FS30VS-06	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.03 ohm	30 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
NP22N055ILE-E1-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			22 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel				22 A
NP22N055SLE-E2-AY	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	55 A	25 mJ	22 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		.051 ohm	22 A	SINGLE	R-PSSO-G2		DRAIN		TO-252		NOT SPECIFIED	NOT SPECIFIED
NP22N055SHE	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	55 A	25 mJ	22 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		.039 ohm	22 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	TO-252AA
FS30VS-2	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.1 ohm	30 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
FS30VSJ-06	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.038 ohm	30 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
NP22N055HHE-AZ	Renesas Electronics	N-CHANNEL	SINGLE	NO	45 W						ENHANCEMENT MODE	1			22 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel				22 A								10	260
NP22N055HLE	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	55 A	25 mJ	22 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	TIN LEAD	.051 ohm	22 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	TO-251AA	e0
NP22N055IHE-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			22 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel				22 A
NP22N055SHE-E2-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	45 W							1			22 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel				22 A								NOT SPECIFIED	NOT SPECIFIED
NP22N055ILE-E1-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			22 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel				22 A
FS30VSJ-2	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.091 ohm	30 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
NP22N055IHE	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	55 A	25 mJ	22 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	TIN LEAD	.039 ohm	22 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	TO-252AA	e0
NP22N055SHE-E1-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			22 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel				22 A
NP22N055SLE-AY	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	55 A	25 mJ	22 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		.051 ohm	22 A	SINGLE	R-PSSO-G2		DRAIN		TO-252		NOT SPECIFIED	NOT SPECIFIED
NP22N055HHE-AY	Renesas Electronics	N-CHANNEL	SINGLE	NO	45 W						ENHANCEMENT MODE	1			22 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel				22 A
NP22N055IHE-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			22 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel				22 A								10	260
NP22N055SHE-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			22 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel				22 A								10	260
NP22N055HLE-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	55 A	25 mJ	22 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		.051 ohm	22 A	SINGLE	R-PSIP-T3			Not Qualified	TO-251		10	260
NP22N055ILE-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			22 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel				22 A								10	260
NP22N055HHE	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	55 A	25 mJ	22 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	TIN LEAD	.039 ohm	22 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	TO-251AA	e0
NP22N055SLE	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	55 A	25 mJ	22 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		.051 ohm	22 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	TO-252AA
RJK0392DPA-00-J5A	Renesas Electronics	N-CHANNEL	SINGLE	YES	45 W							1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				45 A
RJK03A4DPA-00-J5A	Renesas Electronics	N-CHANNEL	SINGLE	YES	45 W							1			42 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				42 A
RJK0392DPA-00-J53	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	180 A		45 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	Nickel/Palladium/Gold (Ni/Pd/Au)	.0048 ohm	45 A	DUAL	R-PDSO-N5		DRAIN	Not Qualified		e4
RJK0358DPA-01#J0B	Renesas Electronics	N-CHANNEL	SINGLE	YES	45 W							1			38 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				38 A
RJK03H1DPA-00-J5A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	180 A		45 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.003 ohm	45 A	DUAL	R-PDSO-N5		DRAIN	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
RJK1051DPB-00#J5	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A		15 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	NICKEL PALLADIUM GOLD	.046 ohm	15 A	SINGLE	R-PSSO-G4		DRAIN	Not Qualified		e4
RJK0392DPA-00#J5A	Renesas Electronics	N-CHANNEL	SINGLE	YES	45 W							1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				45 A
RJK03N0DPA-00#J5A	Renesas Electronics	N-CHANNEL	SINGLE	YES	45 W							1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				45 A
RJK0631JPD-00#J3	Renesas Electronics	N-CHANNEL	SINGLE	YES	45 W							1			30 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel				30 A								NOT SPECIFIED	NOT SPECIFIED
2SK3902-ZK-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			30 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				30 A								10	260
RJK03A4DPA-00-J53	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	168 A		42 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	Nickel/Palladium/Gold (Ni/Pd/Au)	.006 ohm	42 A	DUAL	R-XDSO-N5		DRAIN	Not Qualified		e4
RJK03E7DPA-00-J53	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	180 A		45 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	Nickel/Palladium/Gold (Ni/Pd/Au)	.0033 ohm	45 A	DUAL	R-PDSO-N5		DRAIN	Not Qualified		e4
2SK3902-ZK-E2-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			30 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				30 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.