45 W Power Field Effect Transistors (FET) 524

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
AUIRLR2703	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	96 A	200 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	MATTE TIN OVER NICKEL	.045 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE	TO-252AA	e3
AUIRLR2703TRR	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	96 A	200 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	MATTE TIN OVER NICKEL	.045 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE	TO-252AA	e3
IPD30N06S3-24	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY		55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	60 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	MATTE TIN	.024 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	ULTRA LOW RESISTANCE	TO-252AA	e3		260
IRF9Z24NSTRRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A	96 mJ	12 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Matte Tin (Sn) - with Nickel (Ni) barrier	.175 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY		e3	30	260
TPCA8047-H(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	96 A	95 mJ	32 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0085 ohm	32 A	DUAL	S-PDSO-F5		DRAIN							200 pF
2SK4012	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	52 A	1170 mJ	13 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.4 ohm	13 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
TPCA8036-H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	114 A	188 mJ	38 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0048 ohm	38 A	DUAL	S-PDSO-F5		DRAIN	Not Qualified
TPCA8A08-H(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			38 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				38 A
TPCA8082(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			32 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				32 A
TPCA8103	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	120 A	208 mJ	40 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Tin/Lead (Sn/Pb)	.0068 ohm	40 A	DUAL	R-PDSO-F5		DRAIN	Not Qualified			e0
TPCA8046-H(TE12L1,Q)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			38 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel				38 A
TPCA8004-H(TE12LQ)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	120 A	208 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0062 ohm	40 A	DUAL	S-PDSO-F8		DRAIN							255 pF
TK10A50D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	264 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.72 ohm	10 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified
2SK4013	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	317 mJ	6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		1.7 ohm	6 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
TPCA8046-H(TE12L1)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			38 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel				38 A
TPCA8045-H(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			46 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				46 A
TPCA8047-H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	96 A	95 mJ	32 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0085 ohm	32 A	DUAL	S-PDSO-F5		DRAIN	Not Qualified						200 pF
TK13A55DA	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	550 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	50 A	310 mJ	12.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.48 ohm	12.5 A	SINGLE	R-PSFM-T3		ISOLATED
TPCA8047-H(T2L1,VM	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	96 A	95 mJ	32 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0085 ohm	32 A	DUAL	S-PDSO-F5		DRAIN							200 pF
TPCA8050-H(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			24 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				24 A
TPCA8004-H(TE12LQM	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	120 A	208 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0062 ohm	40 A	DUAL	S-PDSO-F8		DRAIN							255 pF
TK56A12N1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	120 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	210 A	110 mJ	100 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0075 ohm	100 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB
TPCA8048-H(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				35 A
TPCA8047-H(TE12LQM)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	96 A	95 mJ	32 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0085 ohm	32 A	DUAL	S-PDSO-F5		DRAIN							200 pF
TPCA8082(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			32 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				32 A
TPCA8028-H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	150 A	325 mJ	50 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0032 ohm	50 A	DUAL	S-PDSO-F5		DRAIN	Not Qualified
TK7A65D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A	273 mJ	7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.98 ohm	7 A	SINGLE	R-PSFM-T3		ISOLATED
TK72A12N1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	120 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	355 A	256 mJ	72 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0045 ohm	100 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB		30	260
TPCA8A04-H(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			44 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				44 A
TPCA8010-H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	200 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	11 A	19 mJ	5.5 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.45 ohm	5.5 A	DUAL	R-PDSO-F5		DRAIN	Not Qualified
TPCA8008-H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	250 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	8 A	11 mJ	4 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.58 ohm	4 A	DUAL	R-PDSO-F5		DRAIN	Not Qualified			e0
TPCA8102	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	120 A	208 mJ	40 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.014 ohm	40 A	DUAL	R-PDSO-F8		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
TK12A60D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	359 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.55 ohm	12 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified
TPCA8026(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				45 A
TPCA8011-H(TE12L1,Q)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				40 A
TPCA8012-H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	120 A	208 mJ	40 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0068 ohm	40 A	DUAL	S-PDSO-F5		DRAIN	Not Qualified
TPCA8015-H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	105 A	114 mJ	35 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.0079 ohm	35 A	DUAL	R-PDSO-F5		DRAIN	Not Qualified			e0
TPCA8104	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	120 A	116 mJ	40 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.024 ohm	40 A	DUAL	R-PDSO-F8		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
TPCA8046-H(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			38 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				38 A
TPCA8022-H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	66 A	197 mJ	22 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.026 ohm	22 A	DUAL	R-PDSO-F5		DRAIN	Not Qualified
TPH7R506NH(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			55 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel				55 A
TK11A65D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	506 mJ	11 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.7 ohm	11 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB
TK72A08N1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	339 A	161 mJ	100 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0045 ohm	100 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB
TPCA8010-H(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			5.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				5.5 A
TPCA8005-H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	81 A	95 mJ	27 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.013 ohm	27 A	DUAL	R-PDSO-F8			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
TK20A60U(STA4,Q,M)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	144 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.19 ohm	20 A	SINGLE	R-PSFM-T3									150 pF
TPCA8006-H(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel				18 A
TPCA8006-H(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel				18 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.