45 W Power Field Effect Transistors (FET) 524

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
TPH7R506NH(TE12L1)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			55 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel				55 A
TK20A60W,S5VX(M	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	300 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.155 ohm	20 A	SINGLE	R-PSFM-T3	ISOLATED		TO-220AB				7 pF
TPCA8018-H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	90 A	117 mJ	30 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.0082 ohm	30 A	DUAL	S-PDSO-F5	DRAIN	Not Qualified
TK12A50D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	364 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.52 ohm	12 A	SINGLE	R-PSFM-T3	ISOLATED				30	260
TPCA8039-H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	102 A	150 mJ	34 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.0066 ohm	34 A	DUAL	S-PDSO-F5	DRAIN	Not Qualified
TPCA8004-H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	120 A	208 mJ	40 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.0062 ohm	40 A	DUAL	S-PDSO-F8	DRAIN	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	255 pF
TPCA8021-H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	81 A	95 mJ	27 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	.013 ohm	27 A	DUAL	R-PDSO-F8		Not Qualified		e0
TPCA8010-H(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			5.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				5.5 A
TPH7R506NH(TE12L1,Q)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			55 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel				55 A
TPCA8006-H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	36 A	224 mJ	18 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	.067 ohm	18 A	DUAL	R-PDSO-F5	DRAIN	Not Qualified		e0
TPCA8049-H(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			28 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				28 A
TPCA8003-H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	105 A	159 mJ	35 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.0095 ohm	35 A	DUAL	R-PDSO-F5		Not Qualified			NOT SPECIFIED	NOT SPECIFIED
TPCA8051-H(TE12L1)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			28 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel				28 A
2SJ464	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	72 A	937 mJ	18 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.12 ohm	18 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
TK11A55D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	550 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	276 mJ	11 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.63 ohm	11 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
TK13A50DA	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	50 A	416 mJ	12.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.47 ohm	12.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
TPCA8006-H(TE12L1,Q)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel				18 A
TK55A10J1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	210 A	382 mJ	55 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.012 ohm	55 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
2SK4014(Q)	Toshiba	N-CHANNEL	SINGLE	NO	45 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel				6 A
TK65A10N1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	296 A	143 mJ	65 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.0048 ohm	100 A	SINGLE	R-PSFM-T3	ISOLATED		TO-220AB
TPCA8054-H(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				20 A
TPCA8026(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				45 A
TPCA8045-H(TE12L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			46 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				46 A
TPCA8011-H(TE12L1)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				40 A
2SK4014	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	972 mJ	6 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		2 ohm	6 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
TK8A60DA	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A	270 mJ	7.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		1 ohm	7.5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
TK60A08J1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	75 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	498 mJ	60 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.0093 ohm	60 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
TPCA8014-H	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	90 A	84 mJ	30 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.014 ohm	30 A	DUAL	R-PDSO-F5	DRAIN	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
TK9A60D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	260 mJ	9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.83 ohm	9 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified
TK20A20D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	169 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.109 ohm	20 A	SINGLE	R-PSFM-T3	ISOLATED		TO-220AB
TK12A55D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	550 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	317 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.57 ohm	12 A	SINGLE	R-PSFM-T3	ISOLATED
TPCA8046-H(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			38 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				38 A
TK12A50D(STA4,X,M)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	364 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.52 ohm	12 A	SINGLE	R-PSFM-T3							6 pF
TK8A65D(STA4,X,M)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	416 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.84 ohm	8 A	SINGLE	R-PSFM-T3							6 pF
TK6A65D(STA4,X,M)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	281 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		1.11 ohm	6 A	SINGLE	R-PSFM-T3							5 pF
TK12A50D(STA4,X,S)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	364 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		.52 ohm	12 A	SINGLE	R-PSFM-T3							6 pF
2SK2382(T)	Toshiba	N-CHANNEL	SINGLE	NO	45 W						ENHANCEMENT MODE	1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				15 A
2SK2882	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	54 A	176 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	45 W	150 Cel	SILICON		.18 ohm	18 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
2SK2843	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	363 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	45 W	150 Cel	SILICON		.75 ohm	10 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
2SK3844	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A	527 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	.0058 ohm	45 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		e0
2SK1642	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A		9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	Tin/Lead (Sn/Pb)	.55 ohm	9 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		e0
2SK3994(Q)	Toshiba	N-CHANNEL	SINGLE	NO	45 W						ENHANCEMENT MODE	1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				20 A
2SK2382	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	45 A	166 mJ	15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	45 W	150 Cel	SILICON		.18 ohm	15 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
2SK2717	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	15 A	595 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	45 W	150 Cel	SILICON		2.5 ohm	5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
2SK3265	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A	420 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		1 ohm	10 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
2SK2274	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	15 A		5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	45 W	150 Cel	SILICON	Tin/Lead (Sn/Pb)	1.7 ohm	5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		e0
2SK2382(F)	Toshiba	N-CHANNEL	SINGLE	NO	45 W						ENHANCEMENT MODE	1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				15 A
2SK3742	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	15 A	595 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	TIN LEAD	2.5 ohm	5 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.