60 W Power Field Effect Transistors (FET) 455

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
AOD442	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	45 mJ	37 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.025 ohm	37 A	SINGLE	R-PSSO-G2		DRAIN			TO-252		NOT SPECIFIED	NOT SPECIFIED
ATP204-TL-H	Onsemi	N-CHANNEL	SINGLE	YES	60 W							1			100 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Bismuth (Sn/Bi)		100 A			1					e6
DMPH4025SFVWQ-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	80 A	82 mJ	40 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.025 ohm	40 A	DUAL	R-PDSO-F5	1	DRAIN		HIGH RELIABILITY		e3		260	151 pF	AEC-Q101
IRF9520SPBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	300 mJ	6.8 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn)	.6 ohm	6.8 A	SINGLE	R-PSSO-G2	3	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e3	30	260
IRFIB5N65A	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21 A	325 mJ	5.1 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.93 ohm	5.1 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	HIGH VOLTAGE		e0
IRLZ24LPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	68 A	110 mJ	17 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.1 ohm	17 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-262AA		40	260
R6012JNXC7G	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	327 mJ	12 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.39 ohm	12 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB		NOT SPECIFIED	NOT SPECIFIED	1.6 pF
STD4N80K5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	74.5 mJ	3 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			2.5 ohm	3 A	SINGLE	R-PSSO-G2		DRAIN			TO-252		NOT SPECIFIED	NOT SPECIFIED
STD60N3LH5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	192 A	160 mJ	48 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.0114 ohm	48 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	TO-252	e3	30	260
STD75N3LLH6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	300 A		75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.008 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
STD2NC60	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	80 mJ	2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	3.6 ohm	2 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252	e3
STD2NC60-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	80 mJ	2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	3.6 ohm	2 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-251	e3
STU2N105K5	STMicroelectronics	N-CHANNEL	SINGLE	NO	60 W							1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							1.5 A									NOT SPECIFIED	NOT SPECIFIED
NTD20N06T4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	170 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.046 ohm	20 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0		235
STP12PF06	STMicroelectronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	200 mJ	12 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.2 ohm	12 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
IRF521	Microchip Technology	N-CHANNEL	SINGLE	NO	60 W						ENHANCEMENT MODE	1			9.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		9.2 A								e0
IXTA08N50D2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	DEPLETION MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	4.6 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	10	260	11 pF
2SK1388	Fuji Electric	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A		35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR			SILICON					.037 ohm	35 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB
TK7P60W,RVQS	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A	92 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.6 ohm	7 A	SINGLE	R-PSSO-G2		DRAIN							1.7 pF
FDMC2514SDC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	25 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	200 A	84 mJ	40 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0035 ohm	24 A	DUAL	S-PDSO-N5	1	DRAIN SOURCE	Not Qualified	ULTRA-LOW RESISTANCE	MO-240BA	e3	30	260
RFP12N10L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A		12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.2 ohm	12 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
MTD15N06VL-1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	53 A	113 mJ	15 A	3	IN-LINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.085 ohm	15 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	AVALANCHE RATED		e0
ATP114-TL-H	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	165 A	100 mJ	55 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN BISMUTH	.016 ohm	55 A	SINGLE	R-PSSO-G2	1	DRAIN				e6	30	260
MTD15N06VL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	53 A	113 mJ	15 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.085 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e0		235
NVD4856NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	179 A	180.5 mJ	89 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0068 ohm	13.3 A	SINGLE	R-PSSO-G2	1	DRAIN				e3				AEC-Q101
MTD20N06V	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	70 A	200 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.08 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e0		235
NTP22N06	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	66 A	72 mJ	22 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.06 ohm	22 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0		235
MTD2955VT4	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	42 A	216 mJ	12 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.23 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e0		235
NTDV20N06T4G-VF01	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	170 mJ	20 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	60 W	175 Cel	SILICON	140 ns	-55 Cel	140 ns	Matte Tin (Sn) - annealed	.046 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260	120 pF	AEC-Q101
ATP214-TL	Onsemi	N-CHANNEL	SINGLE	YES	60 W						ENHANCEMENT MODE	1			75 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							75 A
NTD600N80S3Z	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21 A	24 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.6 ohm	8 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260
ATP108-TL-H	Onsemi	P-CHANNEL	SINGLE	YES	60 W							1			70 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN BISMUTH		70 A			1					e6	30	260
NVATS5A107PLZT4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	165 A	80 mJ	55 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN BISMUTH	.017 ohm	55 A	SINGLE	R-PSSO-G2	1	DRAIN				e6	30	260		AEC-Q101
FDB6030BL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	150 mJ	40 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	37 ns	-65 Cel	53 ns		.018 ohm	40 A	SINGLE	R-PSSO-G2		DRAIN			TO-263AB
NDB6020P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	70 A		24 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Tin (Sn)	.05 ohm	24 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263AB	e3	NOT SPECIFIED	NOT SPECIFIED
NVATS4A103PZT4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	57 mJ	60 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN BISMUTH	.013 ohm	60 A	SINGLE	R-PSSO-G2	1	DRAIN				e6	30	260		AEC-Q101
ATP208-TL-H	Onsemi	N-CHANNEL	SINGLE	YES	60 W							1			90 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN BISMUTH		90 A			1					e6	30	260
MTD2955VT4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	42 A	216 mJ	12 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Tin (Sn)	.23 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	40	260
MTD2955V	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	42 A	216 mJ	12 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.23 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e0		235
MTA4N60E	Onsemi	N-CHANNEL	SINGLE	NO	60 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		4 A								e0
MTD2955V-1	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	42 A	216 mJ	12 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.23 ohm	12 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	AVALANCHE RATED		e0
MTD15N06VLT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	53 A	113 mJ	15 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.085 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e0		235
NTP22N06L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	66 A	72 mJ	22 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.065 ohm	22 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0		235
NTP4813NLT4G	Onsemi	N-CHANNEL	SINGLE	NO	60 W							1			51 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							51 A
MTD20N06VT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	70 A	200 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.08 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e0		235
ATP214	Onsemi	N-CHANNEL	SINGLE	YES	60 W						ENHANCEMENT MODE	1			75 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							75 A
NVD4856NT4G-VF01	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	179 A	180.5 mJ	89 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0068 ohm	89 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260		AEC-Q101
FDU7030BL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A	174 mJ	56 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	38 ns	-55 Cel	73 ns		.0095 ohm	21 A	SINGLE	R-PSIP-T3					TO-251AA

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.