60 W Power Field Effect Transistors (FET) 455

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
STP14NF10	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	70 mJ	15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.13 ohm	15 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
STP2N105K5	STMicroelectronics	N-CHANNEL	SINGLE	NO	60 W							1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							1.5 A									NOT SPECIFIED	NOT SPECIFIED
STD70N02L-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	24 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	280 mJ	60 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.008 ohm	60 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	LOW THRESHOLD	TO-251AA		NOT SPECIFIED	NOT SPECIFIED
UK6218-40C,118	NXP Semiconductors	N-CHANNEL	SINGLE	YES	60 W						ENHANCEMENT MODE	1			42 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							42 A
BUK452-100A	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	35 mJ	11 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	60 W	175 Cel	SILICON	54 ns		85 ns		.25 ohm	11 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB				50 pF
PHB24N03TT/R	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	96 A	15 mJ	24 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.056 ohm	24 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	ESD PROTECTED
BUK552-60A	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A	30 mJ	14 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	60 W	175 Cel	SILICON	98 ns		140 ns		.15 ohm	14 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB				100 pF
BUK452-100B	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	35 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	60 W	175 Cel	SILICON	54 ns		85 ns		.3 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB				50 pF
PHP5N20E	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	40 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	60 W	175 Cel	SILICON	100 ns		160 ns		.9 ohm	5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	FAST SWITCHING	TO-220AB				60 pF
BUK542-60A	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	37 A	30 mJ	9.2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	22 W	150 Cel	SILICON	98 ns		140 ns		.15 ohm	9.2 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified						100 pF
PHD10N10E	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A	35 mJ	10 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.25 ohm	11 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
BUK542-60B	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	30 mJ	8.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	22 W	150 Cel	SILICON	98 ns		140 ns		.18 ohm	8.4 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified						100 pF
BUK552-100A	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	30 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	60 W	175 Cel	SILICON	88 ns		115 ns		.28 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB				50 pF
BUK552-100B	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	34 A	30 mJ	8.5 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	60 W	175 Cel	SILICON	88 ns		115 ns		.35 ohm	8.5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB				50 pF
BUK452-60A	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	30 mJ	15 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	60 W	175 Cel	SILICON	59 ns		90 ns		.13 ohm	15 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB				100 pF
PHB24N03LTT/R	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	96 A	15 mJ	24 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.056 ohm	24 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE
BUK552-60B	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	52 A	30 mJ	13 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	60 W	175 Cel	SILICON	98 ns		140 ns		.18 ohm	13 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB				100 pF
BUK452-60B	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A	30 mJ	14 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	60 W	175 Cel	SILICON	59 ns		90 ns		.15 ohm	14 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB				100 pF
BUK6240-75C,118	NXP Semiconductors	N-CHANNEL	SINGLE	YES	60 W						ENHANCEMENT MODE	1			22 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							22 A
BUK6246-75C,118	NXP Semiconductors	N-CHANNEL	SINGLE	YES	60 W						ENHANCEMENT MODE	1			22 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					TIN		22 A			1					e3	30	260
BUK6213-30C,118	NXP Semiconductors	N-CHANNEL	SINGLE	YES	60 W						ENHANCEMENT MODE	1			47 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					TIN		47 A			1					e3	30	260
BUK7Y35-55B,115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	113 A	33 mJ	28.43 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.035 ohm	28.43 A	SINGLE	R-PSSO-G4	1	DRAIN			MO-235	e3	30	260		AEC-Q101; IEC-60134
PSMN5R6-100XS,127	NXP Semiconductors	N-CHANNEL	SINGLE	NO	60 W						ENHANCEMENT MODE	1			61 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							61 A
BUK6228-55C,118	NXP Semiconductors	N-CHANNEL	SINGLE	YES	60 W						ENHANCEMENT MODE	1			31 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					TIN		31 A			1					e3	30	260
IPU14N03L	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	20 mJ	30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.0209 ohm	30 A	SINGLE	R-PSIP-T3			Not Qualified	LOGIC LEVEL COMPATIBLE		e0
IRFY340	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	UNSPECIFIED	SWITCHING	400 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	35 A	520 mJ	6.9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.55 ohm	8.7 A	SINGLE	S-XSFM-P3		ISOLATED	Not Qualified	HIGH RELIABILITY	TO-257AA	e0
IPLK80R600P7	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	800 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	22 A	20 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.6 ohm	8 A	DUAL	R-PDSO-F8		DRAIN				e3
IRF024	Infineon Technologies	N-CHANNEL	SINGLE	NO	60 W	METAL		60 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	68 A		17 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR			SILICON				TIN LEAD	.1 ohm	17 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified		TO-204AA	e0
IRFY9140	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	UNSPECIFIED	SWITCHING	100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	60 A	640 mJ	13 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.2 ohm	15.8 A	SINGLE	S-XSFM-P3		ISOLATED	Not Qualified	HIGH RELIABILITY	TO-257AA	e0
IRFY9240M	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	METAL	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	36 A	700 mJ	7.7 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR			SILICON				TIN LEAD	.51 ohm	9.4 A	SINGLE	S-MSFM-P3		ISOLATED	Not Qualified	HIGH RELIABILITY	TO-257AA	e0
IRF025	Infineon Technologies	N-CHANNEL	SINGLE	NO	60 W	METAL		60 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	64 A		16 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR			SILICON				TIN LEAD	.12 ohm	16 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified		TO-204AA	e0
IRFY340M	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	UNSPECIFIED	SWITCHING	400 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	35 A	520 mJ	6.9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR			SILICON				TIN LEAD	.55 ohm	8.7 A	SINGLE	S-XSFM-P3		ISOLATED	Not Qualified	HIGH RELIABILITY	TO-257AA	e0
IMW120R350M1H	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	1200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	13 A		4.7 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON CARBIDE		-55 Cel		TIN	.598 ohm	4.7 A	SINGLE	R-PSFM-T3					TO-247	e3	10	260	1 pF
IRFY044	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	UNSPECIFIED	SWITCHING	60 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	156 A	100 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.04 ohm	16 A	SINGLE	S-XSFM-P3		ISOLATED	Not Qualified	HIGH RELIABILITY	TO-257AA	e0
IRFY9240	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	METAL	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	36 A	700 mJ	7.7 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.51 ohm	9.4 A	SINGLE	S-MSFM-P3		ISOLATED	Not Qualified	HIGH RELIABILITY	TO-257AA	e0
IPU20N03L	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	15 mJ	30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.031 ohm	30 A	SINGLE	R-PSIP-T3			Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-251AA	e3
IRFY140M	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	UNSPECIFIED	SWITCHING	100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	64 A	230 mJ	18.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	60 W	150 Cel	SILICON	166 ns		169 ns	TIN LEAD	.077 ohm	16 A	SINGLE	S-XSFM-P3		ISOLATED	Not Qualified	HIGH RELIABILITY	TO-257AA	e0
IRFY440M	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	UNSPECIFIED	SWITCHING	500 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	28 A	510 mJ	5.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR			SILICON				TIN LEAD	.85 ohm	7 A	SINGLE	S-XSFM-P3		ISOLATED	Not Qualified	HIGH RELIABILITY	TO-257AA	e0
BSPD30N03S2L-20	Infineon Technologies	N-CHANNEL	SINGLE	YES	60 W						ENHANCEMENT MODE	1			30 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							30 A
SPD30N03S2L-20G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	70 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.031 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-252			260
IPD60R600CP	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A	144 mJ	6.1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.6 ohm	6.1 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252AA			260
IPD30N03S2L-20	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	70 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.031 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-252	e3		260
IPI60R600CP	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	15 A	144 mJ	6.1 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.6 ohm	6.1 A	SINGLE	R-PSIP-T3			Not Qualified		TO-262AA	e3
BSC079N03SG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	160 A	120 mJ	40 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0116 ohm	14.6 A	DUAL	R-PDSO-F8	3	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3		260
BUZ104	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY		50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	70 A	35 mJ	17.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Tin/Lead (Sn/Pb)	.1 ohm	17.5 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e0
IPB60R600CP	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A	144 mJ	6.1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.6 ohm	6.1 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3		245
BUZ104L	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	70 A	35 mJ		3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.1 ohm	17.5 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-220AB	e0
IPD14N03L	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	20 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.02 ohm	30 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-252	e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.