60 W Power Field Effect Transistors (FET) 455

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
BSC072N025SG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	25 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	160 A	160 mJ	40 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.0072 ohm	15 A	DUAL	R-PDSO-F8	3	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3		260
IPG20N10S4L-22	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY		100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	130 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel	TIN	.022 ohm	20 A	DUAL	R-PDSO-F8	1					e3			84 pF	AEC-Q101
IPP60R600CP	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	15 A	144 mJ	6.1 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.6 ohm	6.1 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
IRFB4212PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	AMPLIFIER	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	57 A	25 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			.0725 ohm	18 A	SINGLE	R-PSFM-T3			Not Qualified	HIGH RELIABILITY	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
TK3P50D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	81 mJ	3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			3 ohm	3 A	SINGLE	R-PSSO-G2		DRAIN
TK2Q60D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	101 mJ	2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			4.3 ohm	2 A	SINGLE	R-PSIP-T3		DRAIN
TK5Q60W	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21.6 A	71 mJ	5.4 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.9 ohm	5.4 A	SINGLE	R-PSIP-T3		DRAIN
TK50P03M1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	65 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.0098 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN
TK25E06K3	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	75 A	54 mJ	25 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.018 ohm	25 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB
TK2P60D(TE16L1,Q)	Toshiba	N-CHANNEL	SINGLE	YES	60 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					2 A
2SJ412	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	64 A	292 mJ	16 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.32 ohm	16 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
TK6P60W	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24.8 A	84 mJ	6.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.82 ohm	6.2 A	SINGLE	R-PSSO-G2		DRAIN
TK7Q60W	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A	92 mJ	7 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.6 ohm	7 A	SINGLE	R-PSIP-T3		DRAIN
TK6Q60W	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24.8 A	84 mJ	6.2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.82 ohm	6.2 A	SINGLE	R-PSIP-T3		DRAIN
TK5P60W	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21.6 A	71 mJ	5.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.9 ohm	5.4 A	SINGLE	R-PSSO-G2		DRAIN
TK50P03M1(Q)	Toshiba	N-CHANNEL	SINGLE	YES	60 W						ENHANCEMENT MODE	1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					50 A
TK7P60W	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A	92 mJ	7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.6 ohm	7 A	SINGLE	R-PSSO-G2		DRAIN							1.7 pF
TK50P04M1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	65 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.0102 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN
TK2P60D(TE16L1)	Toshiba	N-CHANNEL	SINGLE	YES	60 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					2 A
TK50P04M1(Q)	Toshiba	N-CHANNEL	SINGLE	YES	60 W						ENHANCEMENT MODE	1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					50 A
2SK2733	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	3 A	324 mJ	1 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	60 W	150 Cel	SILICON			9 ohm	1 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
2SK2733(Q)	Toshiba	N-CHANNEL	SINGLE	NO	60 W						ENHANCEMENT MODE	1			1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					1 A
2SK2598	Toshiba	N-CHANNEL	SINGLE	NO	60 W							1			13 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					13 A
2SK2844	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A	259 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	60 W	150 Cel	SILICON			.035 ohm	35 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
2SK2789(TE24L)	Toshiba	N-CHANNEL	SINGLE	NO	60 W						ENHANCEMENT MODE	1			27 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					27 A
2SK2598(TE24L)	Toshiba	N-CHANNEL	SINGLE	NO	60 W						ENHANCEMENT MODE	1			13 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					13 A
2SK2598(SM)	Toshiba	N-CHANNEL	SINGLE	YES	60 W						ENHANCEMENT MODE	1			13 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					13 A
TK40P04M1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	41 mJ	40 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.0134 ohm	40 A	SINGLE	R-PSSO-G2		DRAIN
2SK2733(F)	Toshiba	N-CHANNEL	SINGLE	NO	60 W						ENHANCEMENT MODE	1			1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					1 A
2SK2789(SM)	Toshiba	N-CHANNEL	SINGLE	YES	60 W						ENHANCEMENT MODE	1			27 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					27 A
2SK3090	Toshiba	N-CHANNEL	SINGLE	NO	60 W						ENHANCEMENT MODE	1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					45 A
2SK3090(SM)	Toshiba	N-CHANNEL	SINGLE	YES	60 W						ENHANCEMENT MODE	1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					45 A
TK40P04M1(Q)	Toshiba	N-CHANNEL	SINGLE	YES	60 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					40 A
2SK3760	Toshiba	N-CHANNEL	SINGLE	NO	60 W						ENHANCEMENT MODE	1			3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					3.5 A
NP32N06DLD	Renesas Electronics	N-CHANNEL	SINGLE	NO	60 W						ENHANCEMENT MODE	1			32 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					32 A
2SJ551STL-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A		18 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN BISMUTH	.11 ohm	18 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e6
FS5UM-5	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	15 A		5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			1.3 ohm	5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB
FS5VS-6	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A		5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			1.6 ohm	5 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
NP32N06CLD	Renesas Electronics	N-CHANNEL	SINGLE	NO	60 W						ENHANCEMENT MODE	1			32 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					32 A
RJK5015DPM-00#T1	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	75 A		25 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.24 ohm	25 A	SINGLE	R-PSFM-T3			Not Qualified
2SK555	Renesas Electronics	N-CHANNEL	SINGLE	NO	60 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					7 A
FS5VS-5	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A		5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			1.3 ohm	5 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
2SJ297(L)	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.095 ohm	20 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified
2SJ551L	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	72 A		18 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.11 ohm	18 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
RJK6015DPM-00#T1	Renesas Electronics	N-CHANNEL	SINGLE	NO	60 W							1			21 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					21 A									NOT SPECIFIED	NOT SPECIFIED
FS2VS-12	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A		2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			6.4 ohm	2 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
2SJ291	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.095 ohm	20 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB
H7N0311LD-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A		45 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.016 ohm	45 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.