60 W Power Field Effect Transistors (FET) 455

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
RFD16N05LSM9A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A		16 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.056 ohm	16 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	MEGAFET	TO-252AA	e3	30	260
IPG20N10S4L22ATMA1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY		100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	130 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.022 ohm	20 A	DUAL	R-PDSO-F8	1					e3			84 pF	AEC-Q101
IRF9520PBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	27 A	300 mJ	6.8 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn)	.6 ohm	6.8 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e3	30	260
STL15DN4F5	STMicroelectronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	60 A	150 mJ	60 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn)	.009 ohm	15 A	DUAL	R-PDSO-F6	1	DRAIN		ULTRA LOW-ON RESISTANCE		e3	30	260
IXTP08N100D2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	RECTANGULAR	DEPLETION MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			21 ohm		SINGLE	R-PSFM-T3		DRAIN			TO-220AB				6.5 pF
STD20NF06LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	96 A	225 mJ	24 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.05 ohm	24 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252AA	e3	30	260
FDD5680	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	140 mJ	38 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.021 ohm	38 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
FDP6030BL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	150 mJ	40 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.018 ohm	40 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
STD9N60M2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A	105 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.78 ohm	5.5 A	SINGLE	R-PSSO-G2		DRAIN		BULK: 2500	TO-252		NOT SPECIFIED	NOT SPECIFIED	.68 pF
NDP6020P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	20 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	70 A		24 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.05 ohm	24 A	SINGLE	R-PSFM-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
NTD20N06LT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	128 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.048 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
STD2N105K5	STMicroelectronics	N-CHANNEL	SINGLE	YES	60 W							1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							1.5 A									NOT SPECIFIED	NOT SPECIFIED
FDD3680	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	245 mJ	26 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.046 ohm	25 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
STL40DN3LLH5	STMicroelectronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	44 A		40 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.025 ohm	11 A	DUAL	R-PDSO-F6		DRAIN					NOT SPECIFIED	NOT SPECIFIED
STD5N80K5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	165 mJ	4 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			1.75 ohm	4 A	SINGLE	R-PSSO-G2		DRAIN			TO-252		NOT SPECIFIED	NOT SPECIFIED
IRF9Z24SPBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A	240 mJ	11 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn)	.28 ohm	11 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY		e3	30	260
STL90N3LLH6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	96 A		90 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.0073 ohm	24 A	DUAL	R-XDSO-N5	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE		e3	30	260
STD20NF06T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	96 A	300 mJ	24 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.04 ohm	24 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
STD3N80K5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	65 mJ	2.5 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	3.5 ohm	2.5 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252	e3		260
IXTY08N100D2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	DEPLETION MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	21 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	10	260	6.5 pF
NTD20N06T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	170 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	60 W	175 Cel	SILICON	140 ns	-55 Cel	140 ns	MATTE TIN	.046 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260	120 pF
STL56N3LLH5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	60 A		56 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.0112 ohm	15 A	DUAL	R-PDSO-F5	1	DRAIN		ULTRA-LOW RESISTANCE		e3	30	260
IXTY08N100D2-TRL	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	DEPLETION MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	21 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	10	260	6.5 pF
NTDV20N06LT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	128 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.048 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260		AEC-Q101
BUK7Y102-100B,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	60 W						ENHANCEMENT MODE	1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					TIN		15 A			1					e3	30	260
IXTA08N100D2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	DEPLETION MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	21 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-263AA	e3	10	260	6.5 pF
MCAC28P06Y-TP	Micro Commercial Components	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	86 A	81 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.055 ohm	28 A	DUAL	R-PDSO-F8	1	DRAIN					10	260	62 pF
DMPH4025SFVWQ-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	80 A	82 mJ	40 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.025 ohm	40 A	DUAL	R-PDSO-F5	1	DRAIN		HIGH RELIABILITY		e3		260	151 pF	AEC-Q101
FDB8447L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	153 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0085 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
NTDV20N06T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	170 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	60 W	175 Cel	SILICON	140 ns	-55 Cel	140 ns	TIN	.046 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN				e3			120 pF	AEC-Q101
IRFIB6N60APBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	37 A	290 mJ	5.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.75 ohm	5.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3	30	260
STD9N40M2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A	148 mJ	6 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.8 ohm	6 A	SINGLE	R-PSSO-G2		DRAIN			TO-252		NOT SPECIFIED	NOT SPECIFIED	.7 pF
IXTY08N50D2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	DEPLETION MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	4.6 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	10	260	11 pF
STD36P4LLF6	STMicroelectronics	P-CHANNEL	SINGLE	YES	60 W							1			36 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel							36 A									NOT SPECIFIED	NOT SPECIFIED
IRF9Z24STRLPBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A	240 mJ	11 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn)	.28 ohm	11 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY		e3	30	260
IRF9Z24STRRPBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A	240 mJ	11 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn)	.28 ohm	11 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY		e3	30	260
IXTA08N100D2HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	DEPLETION MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	21 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	10	260	6.5 pF
FQPF8N90C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	25 A	850 mJ	6.3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.9 ohm	6.3 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
IRF520SPBF	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	60 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			9.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn)	.27 ohm	9.2 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	40	260
STD64N4F6AG	STMicroelectronics	N-CHANNEL		YES	60 W			40 V									SMALL OUTLINE				175 Cel			-55 Cel			.0082 ohm		SINGLE								NOT SPECIFIED	NOT SPECIFIED
IRFZ24SPBF	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn)	.1 ohm	17 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	260
IRLZ24PBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	68 A	64.1 mJ	17 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.1 ohm	17 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
BSC160N10NS3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	168 A	50 mJ	42 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.016 ohm	8.8 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified			e3		260
IRFIB5N65APBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21 A	325 mJ	5.1 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.93 ohm	5.1 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3	30	260
IRL520PBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	170 mJ	9.2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.27 ohm	9.2 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3
STP20NF06L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	120 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.085 ohm	20 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
RJK1055DPB-00-J5	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	92 A		23 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.017 ohm	23 A	SINGLE	R-PSSO-G4		DRAIN	Not Qualified			e4
RJK1055DPB-00#J5	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	92 A		23 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.017 ohm	23 A	SINGLE	R-PSSO-G4		DRAIN	Not Qualified			e4

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.