83 W Power Field Effect Transistors (FET) 306

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IPU06N03LZG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	350 A	225 mJ	50 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			.0095 ohm	50 A	SINGLE	R-PSIP-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-251AA		NOT SPECIFIED	NOT SPECIFIED
BUZ58	Infineon Technologies	N-CHANNEL	SINGLE	NO	83 W						ENHANCEMENT MODE	1			4.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					4.2 A
IPDH5N03LAG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	350 A	225 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.0052 ohm	50 A	SINGLE	R-PSSO-G2	3	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-252AA	e3		260
IPU80R1K0CE	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	230 mJ	5.7 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN	.95 ohm	5.7 A	SINGLE	R-PSIP-T3					TO-251	e3
BUZ38	Infineon Technologies	N-CHANNEL	SINGLE	NO	83 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					18 A
IPI90R1K2C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY		900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	68 mJ	5.1 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	1.2 ohm	5.1 A	SINGLE	R-PSIP-T3			Not Qualified		TO-262AA	e3
IPF06N03LAG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	350 A	225 mJ	50 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.0094 ohm	50 A	SINGLE	R-PSSO-G3	3		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-252	e3		260
IPU80R1K0CEBKMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	230 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN	.95 ohm	5.7 A	SINGLE	R-PSIP-T3					TO-251	e3
BUZ67	Infineon Technologies	N-CHANNEL	SINGLE	NO	83 W						ENHANCEMENT MODE	1			9.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					9.6 A
BUZ48	Infineon Technologies	N-CHANNEL	SINGLE	NO	83 W						ENHANCEMENT MODE	1			7.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					7.8 A
BUZ213	Infineon Technologies	N-CHANNEL	SINGLE	NO	83 W						ENHANCEMENT MODE	1			8.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					8.5 A
IPUH6N03LB	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY		30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	160 mJ	50 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.0093 ohm	50 A	SINGLE	R-PSIP-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-251AA	e3
BUZ88A	Infineon Technologies	N-CHANNEL	SINGLE	NO	83 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					5 A
IRL3103PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	220 A	1320 mJ	56 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			.012 ohm	64 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	HIGH RELIABILITY, AVALANCHE RATED	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
BUZ214	Infineon Technologies	N-CHANNEL	SINGLE	NO	83 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					7 A
IPSH6N03LB	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY		30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	160 mJ	50 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.0093 ohm	50 A	SINGLE	R-PSIP-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-251AA	e3
ISZ034N06LM5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	448 A	121 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel		.0034 ohm	112 A	DUAL	S-PDSO-N8		DRAIN							33 pF
BUZ27	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY		100 V	SOLDER LUG	RECTANGULAR	ENHANCEMENT MODE	1	100 A		26 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.06 ohm	26 A	UPPER	R-PUFM-D3		ISOLATED	Not Qualified		TO-238AA
BUZ48A	Infineon Technologies	N-CHANNEL	SINGLE	NO	83 W						ENHANCEMENT MODE	1			6.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					6.8 A
IPD42DP15LM	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	290 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel		.42 ohm	9 A	SINGLE	R-PSSO-G2		DRAIN							28 pF
CPW235P	Infineon Technologies				83 W							1			16 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			Tin/Lead (Sn/Pb)		16 A								e0
BUZ58A	Infineon Technologies	N-CHANNEL	SINGLE	NO	83 W						ENHANCEMENT MODE	1			3.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					3.6 A
IPS06N03LZG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	350 A	225 mJ	50 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			.0095 ohm	50 A	SINGLE	R-PSIP-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-251		NOT SPECIFIED	NOT SPECIFIED
IPU06N03LAG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	350 A	225 mJ	50 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.0096 ohm	50 A	SINGLE	R-PSIP-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-251AA	e3
SPI07N60C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21.9 A	230 mJ	7.3 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.6 ohm	7.3 A	SINGLE	R-PSIP-T3	1		Not Qualified	AVALANCHE RATED	TO-262AA
SPI07N60S5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14.6 A	230 mJ	7.3 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.6 ohm	7.3 A	SINGLE	R-PSIP-T3			Not Qualified	AVALANCHE RATED	TO-262AA	e3
SPI08N50C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	22.8 A	230 mJ	7.6 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.6 ohm	7.6 A	SINGLE	R-PSIP-T3			Not Qualified	AVALANCHE RATED	TO-262AA		NOT SPECIFIED	NOT SPECIFIED
SPU07N60S5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14.6 A	230 mJ	7.3 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	.6 ohm	7.3 A	SINGLE	R-PSIP-T3			Not Qualified	AVALANCHE RATED, HIGH VOLTAGE	TO-251AA	e3
SP001117716	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	210 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.38 ohm	10.6 A	SINGLE	R-PSSO-G2		DRAIN			TO-252
SPD30N06S2-23	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	150 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.023 ohm	30 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED	TO-252	e3
SPI07N60S5HKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14.6 A	230 mJ	7.3 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.6 ohm	7.3 A	SINGLE	R-PSIP-T3			Not Qualified	AVALANCHE RATED	TO-262AA		NOT SPECIFIED	NOT SPECIFIED
SPW07N60CFD	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	17 A	230 mJ	6.6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.7 ohm	6.6 A	SINGLE	R-PSFM-T3			Not Qualified		TO-247AD		NOT SPECIFIED	NOT SPECIFIED
SPU07N60C2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14.6 A	230 mJ	7.3 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.6 ohm	7.3 A	SINGLE	R-PSIP-T3			Not Qualified	AVALANCHE RATED	TO-251	e0
SPI07N65C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21.9 A	230 mJ	7.3 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.6 ohm	7.3 A	SINGLE	R-PSIP-T3			Not Qualified	AVALANCHE RATED	TO-262AA		NOT SPECIFIED	NOT SPECIFIED
SPB07N60S5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14.6 A	230 mJ	7.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	.6 ohm	7.3 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED	TO-263AB	e3		245
SP001130974	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A	230 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.95 ohm	5.7 A	SINGLE	R-PSSO-G2					TO-252
SPB07N60C2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14.6 A	230 mJ	7.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.6 ohm	7.3 A	SINGLE	R-PSSO-G2			Not Qualified	AVALANCHE RATED	TO-263AB	e0
SPU07N60C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21.9 A	230 mJ	7.3 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.6 ohm	7.3 A	SINGLE	R-PSIP-T3			Not Qualified	AVALANCHE RATED	TO-251AA	e3
IPB19DP10NMATMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	55 A	300 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel		.185 ohm	13.8 A	SINGLE	R-PSSO-G2		DRAIN			TO-263AB				40 pF	IEC-61249-2-21; IEC-68-1
SPD07N60C2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14.6 A	230 mJ	7.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.6 ohm	7.3 A	SINGLE	R-PSSO-G2			Not Qualified	AVALANCHE RATED	TO-252	e0
IPB06N03LA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	350 A	225 mJ	91 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		TIN LEAD	.0095 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263AB	e0		220
IPD65R380C6	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	29 A	215 mJ	10.6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	.38 ohm	10.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3
IPD90R1K2C3BT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	900 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	68 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		1.2 ohm	5.1 A	SINGLE	R-PSSO-G2		DRAIN			TO-252
IPB06N03LAG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	350 A	225 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.0095 ohm	50 A	SINGLE	R-PSSO-G2	3	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263AB	e3
IRF40R207TR	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	337 A	165 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel		.0051 ohm	56 A	SINGLE	R-PSSO-G2		DRAIN			TO-252AA				220 pF
BSC025N03MSG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	135 mJ	100 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	.003 ohm	23 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified			e3		260
IRFZ46N	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W		SWITCHING	55 V			ENHANCEMENT MODE	1	180 A		43 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	88 W	175 Cel		-55 Cel			43 A				DRAIN
BUZ17	Infineon Technologies	N-CHANNEL	SINGLE	NO	83 W						ENHANCEMENT MODE	1			32 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					32 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.