83 W Power Field Effect Transistors (FET) 306

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
SI7469DP-T1-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	80 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	40 A	100 mJ	28 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.025 ohm	10.2 A	DUAL	R-PDSO-C5	1	DRAIN	Not Qualified			e3	30	260
FDD4685-F085P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	121 mJ	32 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	43 ns	-55 Cel	81 ns	MATTE TIN	.027 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260	205 pF	AEC-Q101
SI7469DP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		80 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	40 A	100 mJ	28 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.025 ohm	10.2 A	DUAL	R-PDSO-C5	1	DRAIN	Not Qualified			e3	30	260
SI7489DP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	40 A	61 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	55 ns	-55 Cel	315 ns	Matte Tin (Sn) - annealed	.041 ohm	28 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified			e3	30	260
SI7489DP-T1-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	40 A	61 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	55 ns	-55 Cel	315 ns	Matte Tin (Sn) - annealed	.041 ohm	28 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified			e3	30	260
FDD4685TF-SB82135	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		40 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	43 ns	-55 Cel	81 ns		.027 ohm	32 A	SINGLE	R-PSSO-G2		DRAIN			TO-252AA				205 pF	AEC-Q101
VNP20N07-E	STMicroelectronics	N-CHANNEL	SINGLE	NO	83 W						ENHANCEMENT MODE	1						FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Matte Tin (Sn)	.07 ohm									e3
AON7528	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	200 A	63 mJ	50 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.0034 ohm	50 A	DUAL	S-PDSO-F8		DRAIN							149 pF
FQD18N20V2TM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	340 mJ	15 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.14 ohm	15 A	DUAL	R-PDSO-G2	1	DRAIN	Not Qualified			e3	30	260
VNB20N07TR-E	STMicroelectronics	N-CHANNEL	COMPLEX	YES	83 W	PLASTIC/EPOXY			GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON	580 ns		1100 ns		.07 ohm		SINGLE	R-PSSO-G2					TO-263
BSC060P03NS3EGATMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	200 A	149 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	231 ns	-55 Cel	150 ns	TIN	.006 ohm	17.7 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified	AVALANCHE RATED		e3			220 pF
NVMFS5C442NLWFAFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	265 mJ	130 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0037 ohm	130 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	37 pF	AEC-Q101
NTD6415ANLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	79 mJ	23 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.056 ohm	23 A	DUAL	R-PDSO-G2	1	DRAIN	Not Qualified			e3	30	260	70 pF
VNB20N07-E	STMicroelectronics	N-CHANNEL	COMPLEX	YES	83 W	PLASTIC/EPOXY			GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON	580 ns		1100 ns		.07 ohm		SINGLE	R-PSSO-G2					TO-263
FDD5N60NZTM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	216 mJ	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	2 ohm	4 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260
FDMS86182	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	364 A	216 mJ	78 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	34 ns	-55 Cel	43 ns	Matte Tin (Sn) - annealed	.0072 ohm	78 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA	e3	30	260	25 pF
SPD06N80C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A	230 mJ	6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.9 ohm	6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH VOLTAGE	TO-252AA	e3	40	260
SIR882ADP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	100 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	80 A	45 mJ	60 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.0087 ohm	60 A	DUAL	R-PDSO-C5	1	DRAIN				e3	30	260
SPP07N60C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21.9 A	230 mJ	7.3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.6 ohm	7.3 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e3
NVMFS5C423NLWFAFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	280 mJ	150 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.003 ohm	150 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
IPD90R1K2C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	900 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	68 mJ	5.1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	1.2 ohm	5.1 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3		260
NVMFS5C442NLAFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	265 mJ	130 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0037 ohm	130 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	37 pF	AEC-Q101
SPP07N60C3XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21.9 A	230 mJ	7.3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.6 ohm	7.3 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED, HIGH RELIABILITY	TO-220AB	e3
ISZ034N06LM5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	448 A	121 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0034 ohm	112 A	DUAL	S-PDSO-N8		DRAIN							33 pF	IEC-61249-2-21; IEC-68-1
NTMFS5C423NLT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	280 mJ	150 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.003 ohm	150 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260
IRF6215PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	310 mJ	11 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.29 ohm	13 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
IRFR420APBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	140 mJ	3.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	3 ohm	3.3 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	10	260
IPD60R380P6ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	29 A	210 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.38 ohm	10.6 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252	e3
IRFR420ATRPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	140 mJ	3.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	3 ohm	3.3 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
SIR846ADP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	100 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	200 A	80 mJ	60 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0078 ohm	58.6 A	DUAL	R-PDSO-C5	1	DRAIN				e3	30	260
IRFH7545TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	340 A	160 mJ	85 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.0052 ohm	85 A	DUAL	R-PDSO-F5	1	DRAIN							220 pF
SIR414DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	70 A	80 mJ	50 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	5.4 W	150 Cel	SILICON	77 ns	-55 Cel	90 ns	MATTE TIN	.0032 ohm	33 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified			e3	30	260
AON6512	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	340 A	123 mJ	150 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.0024 ohm	150 A	DUAL	R-PDSO-F8	1	DRAIN							175 pF
NTMFS5C442NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	220 mJ	140 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0023 ohm	140 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	40 pF
IPW60R145CFD7XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	58 A	68 mJ	16 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.145 ohm	16 A	SINGLE	R-PSFM-T3					TO-247	e3
AOW4S60	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE	NO	83 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							4 A
SPP08N50C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	83 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	22.8 A	230 mJ	7.6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.6 ohm	7.6 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
AON7242	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	255 A	115 mJ	50 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.0058 ohm	50 A	DUAL	S-PDSO-N8		DRAIN							70 pF
AUIRF7737L2TR	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	UNSPECIFIED	SWITCHING	40 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	624 A	386 mJ	315 A	7	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0019 ohm	31 A	BOTTOM	R-XBCC-N7	1	DRAIN	Not Qualified	HIGH RELIABILITY		e3	40	260
SI7658ADP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	UNSPECIFIED	SWITCHING	30 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	80 A	125 mJ	60 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.0028 ohm	36 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
IPD60R145CFD7ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	58 A	68 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.145 ohm	16 A	SINGLE	R-PSSO-G2	1	DRAIN		HIGH RELIABILITY	TO-252	e3
NVMFS5C442NWFAFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	220 mJ	140 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0023 ohm	140 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	40 pF	AEC-Q101
SIR880ADP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	80 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	100 A	45 mJ	60 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0063 ohm	60 A	DUAL	R-PDSO-C5		DRAIN
SIR882DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	UNSPECIFIED	SWITCHING	100 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	80 A	45 mJ	60 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0087 ohm	60 A	DUAL	R-XDSO-C5		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
AON6234	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	220 A	125 mJ	85 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.005 ohm	85 A	DUAL	R-PDSO-F8		DRAIN							77 pF
IXTA02N250HVTRL	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		2500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.6 A		.2 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	450 ohm	.2 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	10	260	3 pF
IXTA02N250HV-TRL	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		2500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.6 A		.2 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	450 ohm	.2 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	10	260	3 pF
VNP28N04-E	STMicroelectronics	N-CHANNEL	SINGLE	NO	83 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Matte Tin (Sn)		40 A								e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.