85 W Power Field Effect Transistors (FET) 147

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

FQP3P50

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10.8 A

250 mJ

2.7 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

4.9 ohm

2.7 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

SCT2450KEC

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

25 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

.585 ohm

10 A

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

4 pF

STD11N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

130 mJ

9 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.48 ohm

9 A

SINGLE

R-PSSO-G2

TO-252

NOT SPECIFIED

NOT SPECIFIED

BUK9Y30-75B,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

137 A

78 mJ

34 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.03 ohm

34 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

MO-235

e3

30

260

HUF76423P3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.035 ohm

35 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

BUK7635-55A,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

139 A

49 mJ

35 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.035 ohm

35 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

STB11N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

130 mJ

9 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.48 ohm

9 A

SINGLE

R-PSSO-G2

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

SCT2450KEGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

25 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

.585 ohm

10 A

SINGLE

R-PSFM-T3

TO-247

4 pF

BUK9Y19-55B,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

184 A

80 mJ

46 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.021 ohm

46 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

MO-235

e3

30

260

STD10N60M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

110 mJ

7.5 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.6 ohm

7.5 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

.84 pF

STD11N50M2

STMicroelectronics

N-CHANNEL

SINGLE

YES

85 W

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

NOT SPECIFIED

NOT SPECIFIED

STP11N65M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

110 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.68 ohm

7 A

SINGLE

R-PSFM-T3

DRAIN

BULK: 2500

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

.9 pF

FQP4P40

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

14 A

260 mJ

3.5 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3.1 ohm

3.5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STD12N65M2

STMicroelectronics

N-CHANNEL

SINGLE

YES

85 W

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

NOT SPECIFIED

NOT SPECIFIED

PSMN4R2-40VSHX

Nexperia

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

40 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

393 A

42.3 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0042 ohm

98 A

DUAL

R-PDSO-X8

1

DRAIN SOURCE

e3

30

260

200 pF

IEC-60134

BUK9635-55A,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

133 A

48 mJ

34 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.035 ohm

34 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

RD3U080AAFRATL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

32 A

4.67 mJ

8 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.3 ohm

8 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

40 pF

AEC-Q101

2SK2847

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

799 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

85 W

150 Cel

SILICON

TIN LEAD

1.4 ohm

8 A

SINGLE

R-PSFM-T3

Not Qualified

e0

BUK7635-55A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

139 A

49 mJ

35 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.035 ohm

35 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

STD85N10F7AG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

280 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.01 ohm

70 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

NTP90N02

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

PLASTIC/EPOXY

SWITCHING

24 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

733 mJ

90 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0058 ohm

90 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

235

NTB90N02T4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

24 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

733 mJ

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0058 ohm

90 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

260

NTB90N02

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

24 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

733 mJ

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0058 ohm

90 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e0

235

NTB90N02G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

24 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

733 mJ

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0058 ohm

90 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

260

NTP90N02G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

PLASTIC/EPOXY

SWITCHING

24 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

733 mJ

90 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0058 ohm

90 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

260

NTB90N02T4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

24 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

733 mJ

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0058 ohm

90 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e0

235

NVTFS002N04CTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

676 A

268 mJ

27 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0024 ohm

27 A

DUAL

R-PDSO-F8

1

DRAIN

e3

30

260

41 pF

AEC-Q101

NVTFWS002N04CTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

676 A

268 mJ

27 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0024 ohm

27 A

DUAL

R-PDSO-F8

1

DRAIN

e3

30

260

41 pF

AEC-Q101

NTTFS002N04CTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

40 V

FLAT

SQUARE

ENHANCEMENT MODE

1

676 A

268 mJ

27 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0024 ohm

27 A

DUAL

S-PDSO-F8

1

DRAIN

e3

30

260

41 pF

FQP2N90

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8.8 A

170 mJ

2.2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

7.2 ohm

2.2 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

NVTFWS002N04CLTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

706 A

268 mJ

28 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0035 ohm

28 A

DUAL

R-PDSO-F8

1

DRAIN

e3

30

260

47 pF

AEC-Q101

NVTFS002N04CLTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

706 A

268 mJ

28 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0035 ohm

28 A

DUAL

R-PDSO-F8

1

DRAIN

e3

30

260

47 pF

AEC-Q101

FQP2N80

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

9.6 A

180 mJ

2.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

6.3 ohm

2.4 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

NTTFS002N04CLTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

40 V

FLAT

SQUARE

ENHANCEMENT MODE

1

706 A

268 mJ

28 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0035 ohm

28 A

DUAL

S-PDSO-F8

1

DRAIN

e3

30

260

47 pF

2SK3833

Onsemi

N-CHANNEL

SINGLE

NO

85 W

ENHANCEMENT MODE

1

48 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

48 A

STP7NB30

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

150 mJ

7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.9 ohm

7 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

STD40NF06T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

160 A

250 mJ

40 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.028 ohm

40 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

e0

STRH10N25ESY3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

UNSPECIFIED

SWITCHING

250 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

40 A

60 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.1 ohm

10 A

SINGLE

R-XSFM-P3

1

Not Qualified

HIGH RELIABILITY

TO-257AA

STU10N60M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

110 mJ

7.5 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.6 ohm

7.5 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

e3

STU11N65M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

110 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.68 ohm

7 A

SINGLE

R-PSIP-T3

DRAIN

BULK: 2500

TO-251

NOT SPECIFIED

NOT SPECIFIED

.9 pF

STRH10N25ESY1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

UNSPECIFIED

SWITCHING

250 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

40 A

60 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.1 ohm

10 A

SINGLE

R-XSFM-P3

Not Qualified

HIGH RELIABILITY

TO-257AA

STP7NB30FP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

150 mJ

7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.9 ohm

4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e0

STD40NF06

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

160 A

250 mJ

40 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.028 ohm

40 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

e0

STD80N10F7

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

280 A

70 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.01 ohm

70 A

SINGLE

R-PSSO-G2

DRAIN

ULTRA LOW-ON RESISTANCE

TO-252

NOT SPECIFIED

NOT SPECIFIED

STP10NB20

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

150 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.4 ohm

10 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STB15N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44 A

160 mJ

11 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.34 ohm

11 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

30

245

STB10N60M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

110 mJ

7.5 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.6 ohm

7.5 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

.84 pF

STB24NF10T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

104 A

220 mJ

26 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.06 ohm

26 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.