STMicroelectronics - STD11N50M2

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STD11N50M2 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STD11N50M2
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 85 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (ID): 8 A;
Datasheet STD11N50M2 Datasheet
In Stock2,155
NAME DESCRIPTION
Other Names: 497-15306-1
497-15306-2
497-15306-6-ND
497-STD11N50M2TR
497-STD11N50M2CT
-497-15306-1
-497-15306-2
497-15306-2-ND
497-15306-1-ND
497-15306-6
497-STD11N50M2DKR
-497-15306-6
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 8 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Maximum Power Dissipation (Abs): 85 W
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 8 A
Peak Reflow Temperature (C): NOT SPECIFIED
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