89 W Power Field Effect Transistors (FET) 124

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
BSC024N025SG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	25 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	800 mJ	100 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.0037 ohm	27 A	DUAL	R-PDSO-F8	3	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3		260
IRF6674MTR1PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	UNSPECIFIED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	134 A	98 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-40 Cel		.011 ohm	13.4 A	BOTTOM	R-XBCC-N3		DRAIN							105 pF
IRFH4213TRPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	89 W							1			100 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					100 A			1
IRF6691TR	Infineon Technologies	N-CHANNEL	SINGLE	YES	89 W						ENHANCEMENT MODE	1			180 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					180 A
IRLR3717TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	460 A	460 mJ	120 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN OVER NICKEL	.004 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
BSB008NE2LXXT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	METAL	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	600 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-40 Cel		.0008 ohm	180 A	BOTTOM	R-MBCC-N3		DRAIN		ULTRA LOW RESISTANCE
IRF6638PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	200 A	37 mJ	140 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.0029 ohm	25 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified	LOW CONDUCTION LOSS			40	260
IRF8308MPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	89 W						ENHANCEMENT MODE	1			27 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					27 A
IPW50R350CP	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	89 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	22 A	246 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.35 ohm	10 A	SINGLE	R-PSFM-T3			Not Qualified		TO-247AD		NOT SPECIFIED	NOT SPECIFIED
BSB012N03MX3G	Infineon Technologies	N-CHANNEL	SINGLE	YES	89 W						ENHANCEMENT MODE	1			180 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					180 A
BSC027N03SG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	800 mJ	100 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.0039 ohm	25 A	DUAL	R-PDSO-F8	3	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3		260
BSC080P03LSG	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	120 A	248 mJ	30 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.008 ohm	16 A	DUAL	R-PDSO-F8	3	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3		260
IRF6638TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	200 A	37 mJ	140 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN SILVER COPPER	.0029 ohm	25 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified			e1
IRF6668	Infineon Technologies	N-CHANNEL	SINGLE	YES	89 W						ENHANCEMENT MODE	1			55 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					55 A			1
IRF6726MPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	250 A	260 mJ	180 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.0017 ohm	32 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified				40	260
IRF6635TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	250 A	200 mJ	180 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.0018 ohm	32 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified
BSB008NE2LXXUMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	METAL	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	600 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-40 Cel	SILVER NICKEL	.0008 ohm	180 A	BOTTOM	R-MBCC-N3	3	DRAIN	Not Qualified	ULTRA LOW RESISTANCE		e4
BSB018NE2LXG	Infineon Technologies	N-CHANNEL	SINGLE	YES	89 W						ENHANCEMENT MODE	1			179 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					179 A			3							260
IRF6618PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	240 A	210 mJ	29 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.0022 ohm	30 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified				40	260
IRF6646	Infineon Technologies	N-CHANNEL	SINGLE	YES	89 W							1			68 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					68 A			1
IRF6797MTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	UNSPECIFIED	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	260 mJ	210 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN SILVER COPPER	.0014 ohm	36 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified	LOW CONDUCTION LOSS		e1	30	260
IRF6714MPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	UNSPECIFIED	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	234 A	175 mJ	166 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.0021 ohm	29 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified				40	260
IRLR3717TRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	460 A	460 mJ	120 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN OVER NICKEL	.004 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
DMT15H017LPSW-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	150 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	230 A	315.4 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.0255 ohm	58 A	DUAL	R-PDSO-F8		DRAIN				e3		260	6.7 pF
IXTU5N50P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	89 W	PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	250 mJ	5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			1.4 ohm	5 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-251		NOT SPECIFIED	NOT SPECIFIED
IXTY5N50P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	250 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	1.4 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252	e3	10	260
IXTP5N50P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	89 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	250 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		PURE TIN	1.4 ohm	5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB
IXTA5N50P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	250 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn)	1.4 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AA	e3	10	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.