89 W Power Field Effect Transistors (FET) 124

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRF6727MTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	260 A	250 mJ	180 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.0017 ohm	32 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified			e1	30	260
IRF6674TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	UNSPECIFIED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	134 A	98 mJ	67 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.011 ohm	13.4 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified			e1	30	260
PSMN028-100YS,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	89 W						ENHANCEMENT MODE	1			42 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					TIN		42 A			1					e3	30	260
PSMN018-80YS,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	89 W						ENHANCEMENT MODE	1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					TIN		45 A			1					e3	30	260
BSB008NE2LX	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	METAL	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	600 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-40 Cel		SILVER NICKEL	.0008 ohm	180 A	BOTTOM	R-MBCC-N3	3	DRAIN	Not Qualified	ULTRA LOW RESISTANCE		e4
FDD18N20LZ	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	64 A	320 mJ	16 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.13 ohm	16 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
IRF6644TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	UNSPECIFIED		100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	228 A	86 mJ	10 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	2.8 W	150 Cel	SILICON		-40 Cel		TIN SILVER COPPER	.013 ohm	10 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified	LOW CONDUCTION LOSS		e1	30	260
IRF6646TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	UNSPECIFIED	SWITCHING	80 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	96 A	230 mJ	68 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.0095 ohm	12 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified			e1	30	260
PSMN5R8-40YS,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	89 W						ENHANCEMENT MODE	1			90 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					TIN		90 A			1					e3	30	260
IRF8301MTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	250 A	260 mJ	192 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0015 ohm	34 A	BOTTOM	R-XBCC-N3	1	DRAIN		ULTRA LOW RESISTANCE
FCD600N60Z	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22.2 A	135 mJ	7.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.6 ohm	7.4 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260
IRF6643TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	UNSPECIFIED	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	76 A	50 mJ	35 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.0345 ohm	6.2 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified			e1	30	260
FDD6N50TM_WS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR		1	24 A	270 mJ	6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.9 ohm	6 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA		30	260
FDD86252	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	25 A	72 mJ	42 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.052 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252	e3	30	260
NVMFS6H836NLWFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	449 A	653 mJ	77 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0078 ohm	77 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	11 pF	AEC-Q101
PSMN012-60YS,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	89 W						ENHANCEMENT MODE	1			59 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					TIN		59 A			1					e3	30	260
IRF6662TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	UNSPECIFIED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	66 A	39 mJ	8.3 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.022 ohm	8.3 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified			e1	30	260
FDMS8558SDC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	25 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	140 A	145 mJ	90 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.0015 ohm	90 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA	e3	30	260
NVMFD5C446NT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	637 A	223 mJ	127 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0029 ohm	24 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260		AEC-Q101
DMT15H017LPS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	150 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	230 A	315.4 mJ	58 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0255 ohm	58 A	DUAL	R-PDSO-F5	1	DRAIN				e3		260
IRF6668TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	UNSPECIFIED	SWITCHING	80 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	170 A	24 mJ	55 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.015 ohm	55 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified			e1	30	260
IRF6618TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	240 A	210 mJ	29 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.0022 ohm	30 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified			e1	30	260
IRF6641TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	UNSPECIFIED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	37 A	46 mJ	26 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.0599 ohm	4.6 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified			e1	30	260
BSB014N04LX3GXT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	METAL	SWITCHING	40 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	260 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-40 Cel			.0014 ohm	180 A	BOTTOM	R-MBCC-N3		DRAIN
BSB014N04LX3GXUMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	METAL	SWITCHING	40 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	260 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-40 Cel		SILVER NICKEL	.0014 ohm	180 A	BOTTOM	R-MBCC-N3	3	DRAIN	Not Qualified			e4
FDD6N50FTM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A	270 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	110.6 ns	-55 Cel	127.7 ns	MATTE TIN	1.15 ohm	5.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260	9.5 pF
IPI50R350CP	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	89 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	22 A	246 mJ	10 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.35 ohm	10 A	SINGLE	R-PSIP-T3			Not Qualified		TO-262AA	e3
AOD66920	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	72 mJ	70 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.0107 ohm	70 A	SINGLE	R-PSSO-G2		DRAIN			TO-252		NOT SPECIFIED	NOT SPECIFIED	13 pF
BUK7275-100A,118	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	87 A	100 mJ	21.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.075 ohm	21.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
IRF6643TR1PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	UNSPECIFIED	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	76 A	50 mJ	35 A	3	CHIP CARRIER	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				SILVER NICKEL	.0345 ohm	6.2 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified			e4	30	260
IRF6644TR1PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	UNSPECIFIED		100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	228 A	86 mJ	10 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	2.8 W	150 Cel	SILICON		-40 Cel			.013 ohm	10 A	BOTTOM	R-XBCC-N3		DRAIN		LOW CONDUCTION LOSS
NVMFS6H836NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	432 A	521 mJ	74 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0067 ohm	74 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260	8 pF	AEC-Q101
IRF6620TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	UNSPECIFIED	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	220 A	39 mJ	150 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.0027 ohm	27 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified	LOW CONDUCTION LOSS		e1	30	260
IRF6727MTR1PBF	International Rectifier	N-CHANNEL	SINGLE	YES	89 W						ENHANCEMENT MODE	1			180 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							180 A
IRF6775MTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	UNSPECIFIED	AMPLIFIER	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	39 A	33 mJ	28 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.056 ohm	4.9 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified			e1	30	260
IRLR3717PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	460 A	460 mJ	120 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.004 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
NVMFS6H836NWFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	432 A	521 mJ	74 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0067 ohm	74 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260	8 pF	AEC-Q101
NVMFD5C446NWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	637 A	223 mJ	127 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0029 ohm	24 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260		AEC-Q101
NVMFS6H836NWFT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	432 A	521 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0067 ohm	74 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260	8 pF	AEC-Q101
SIHH240N60E-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	600 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	30 A	81 mJ	12 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	58 ns	-55 Cel	80 ns		.24 ohm	12 A	SINGLE	S-PSSO-N4		DRAIN							5 pF
AON7140	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	550 A	135 mJ	148 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.0035 ohm	148 A	DUAL	S-PDSO-N8	1	DRAIN							65 pF
FCD620N60ZF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21.9 A	135 mJ	7.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.62 ohm	7.3 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260
FDU6N50TU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	89 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	270 mJ	6 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.9 ohm	6 A	SINGLE	R-PSIP-T3			Not Qualified			e3
FCP600N60Z	Onsemi	N-CHANNEL	SINGLE	NO	89 W							1			7.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Matte Tin (Sn) - annealed		7.4 A								e3	NOT SPECIFIED	NOT SPECIFIED
NTMYS006N08LHTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	449 A	653 mJ	77 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	3.7 W	175 Cel	SILICON		-55 Cel		MATTE TIN	.0078 ohm	77 A	SINGLE	R-PSSO-G4	1	DRAIN		LOW CONDUCTION LOSS		e3	30	260
NVMFS6H836NT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	432 A	521 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0067 ohm	74 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260	8 pF	AEC-Q101
FDMS7558S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	25 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	180 A	288 mJ	199 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.00125 ohm	32 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified		MO-240AA	e3	30	260
FDMS3006SDC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	144 mJ	49 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0019 ohm	34 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA	e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.