Infineon Technologies - IRF6691TR

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IRF6691TR by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF6691TR
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
Datasheet IRF6691TR Datasheet
In Stock463
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 89 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 180 A
Maximum Drain Current (Abs) (ID): 180 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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