96 W Power Field Effect Transistors (FET) 94

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
BSC014N04LSIATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	780 A	90 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	.002 ohm	166 A	DUAL	R-PDSO-F8	1	DRAIN				e3			180 pF
SI7148DP-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	75 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	60 A	100 mJ	28 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	96 ns	-55 Cel	90 ns	MATTE TIN	.011 ohm	28 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260
CSD19533Q5A	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	231 A	106 mJ	100 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.0111 ohm	13 A	DUAL	R-PDSO-N8	1	DRAIN		AVALANCHE RATED		e3	30	260	12.5 pF
BSC009NE2LSATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	25 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	820 A	190 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	.0012 ohm	100 A	DUAL	R-PDSO-F8	1	DRAIN				e3
SI7148DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	75 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	60 A	100 mJ	28 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	96 ns	-55 Cel	90 ns	PURE MATTE TIN	.011 ohm	28 A	DUAL	R-PDSO-F8	1	DRAIN		AVALANCHE RATED
SI7172DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	UNSPECIFIED	SWITCHING	200 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	30 A	11.25 mJ	25 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.07 ohm	5.9 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
SI7738DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	UNSPECIFIED	SWITCHING	150 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	30 A	45 mJ	30 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.038 ohm	7.7 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
IRF7946TRPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	96 W							1			90 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							90 A			1
FDMS86250	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	150 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	100 A	180 mJ	20 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.025 ohm	6.7 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA	e3	30	260
BSC010NE2LSI	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	25 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	100 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.0014 ohm	38 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified			e3
NTMFS5832NLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	443 A	134 mJ	111 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0065 ohm	20 A	DUAL	R-PDSO-F5	1		Not Qualified			e3	30	260
FDMS0300S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	180 A	242 mJ	49 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.0018 ohm	31 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA	e3	30	260
NTD360N80S3Z	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	32.5 A	40 mJ	13 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.36 ohm	13 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260
RFP30N06LE	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	96 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			30 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.047 ohm	30 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
SI7190DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	UNSPECIFIED	SWITCHING	250 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	30 A	9.8 mJ	18.4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.118 ohm	4.4 A	DUAL	R-PDSO-C8	1	DRAIN	Not Qualified			e3	30	260
SIHJ7N65E-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	17 A	68 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	68 ns	-55 Cel	96 ns		.598 ohm	7.9 A	SINGLE	R-PSSO-G4		DRAIN					NOT SPECIFIED	NOT SPECIFIED	4 pF
BUK7613-60E,118	NXP Semiconductors	N-CHANNEL	SINGLE	YES	96 W						ENHANCEMENT MODE	1			58 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					TIN		58 A			1					e3	30	245
NTD4N60	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14 A	80 mJ	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	2.4 ohm	4 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	HIGH VOLTAGE		e0
FDMS7656AS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	180 A	242 mJ	194 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.0018 ohm	31 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified		MO-240AA	e3	30	260
IRF6717MTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	UNSPECIFIED	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	290 mJ	220 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN SILVER COPPER	.00125 ohm	38 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified			e1	30	260
IRFH8311TRPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	96 W			30 V				1			169 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel						.0021 ohm	169 A			1
DMT12H007LPS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	120 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	360 A	365 mJ	90 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.0078 ohm	90 A	DUAL	R-PDSO-F5		DRAIN				e3		260	17.8 pF
BSC010NE2LS	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	25 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	190 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	.0013 ohm	40 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified			e3
BSC011N03LS	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	920 A	190 mJ	230 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	.0014 ohm	204 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified			e3		260	220 pF
BUK9637-100E,118	NXP Semiconductors	N-CHANNEL	SINGLE	YES	96 W						ENHANCEMENT MODE	1			31 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					TIN		31 A			1					e3	30	245
FDMS3500	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	75 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	100 A	384 mJ	49 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.0145 ohm	9.2 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified			e3	30	260
IPP60R299CP	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	96 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	34 A	290 mJ	11 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.299 ohm	11 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
NTMFS4C302NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY		30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	388 A	186 mJ	41 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0017 ohm	41 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260
CSD17559Q5	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	541 mJ	100 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.0015 ohm	40 A	DUAL	R-PDSO-N8	1	DRAIN		AVALANCHE RATED		e3	30	260	113 pF
NDD03N80Z-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	96 W	PLASTIC/EPOXY		800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	100 mJ	2.9 A	3	IN-LINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	4.5 ohm	1.9 A	SINGLE	R-PSIP-T3	3	DRAIN				e3	30	260
NTD6N40-1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21 A	180 mJ	6 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					1.1 ohm	6 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
NTD6N40T4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21 A	180 mJ	6 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	1.1 ohm	6 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
NTD6N40	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21 A	180 mJ	6 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	1.1 ohm	6 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
NTP360N80S3Z	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	96 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32.5 A	40 mJ	13 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.36 ohm	13 A	SINGLE	R-PSFM-T3					TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
NTP7N40	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	96 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24.5 A	180 mJ	7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	1.1 ohm	7 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
NDD60N550U1-1G	Onsemi	N-CHANNEL	SINGLE	NO	96 W							1			8.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN		8.5 A			3					e3	30	260
NDD03N80ZT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY		800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	100 mJ	2.9 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	4.5 ohm	1.9 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260
NDD60N550U1T4G	Onsemi	N-CHANNEL	SINGLE	YES	96 W							1			8.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN		8.5 A			1					e3	30	260
NTD4N60T4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14 A	80 mJ	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	2.4 ohm	4 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	HIGH VOLTAGE		e0
FDMS86540	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	350 A	228 mJ	50 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.0034 ohm	20 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA	e3	30	260
FDMS86540-SN00379	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	642 A	228 mJ	129 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	74 ns	-55 Cel	67 ns		.0034 ohm	129 A	DUAL	R-PDSO-F5	1	DRAIN					30	260	90 pF
NTD5N50-1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	96 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	125 mJ	5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	1.7 ohm	5 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	HIGH VOLTAGE		e0
FDMS86310	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	100 A	183 mJ	50 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.0048 ohm	17 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA	e3	30	260
NTD5N50T4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A	125 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	1.7 ohm	5 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	HIGH VOLTAGE		e0
NVD5863NLT4G-VF01	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	500 A	265 mJ	82 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.009 ohm	82 A	DUAL	R-PSSO-G2	1	DRAIN				e3	30	260		AEC-Q101
NTD4N60-1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	96 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14 A	80 mJ	4 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					2.4 ohm	4 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	HIGH VOLTAGE
FDMS7556S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY	SWITCHING	25 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	312 mJ	49 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0012 ohm	35 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified		MO-240AA	e3	30	260
NVD5863NLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	96 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	442 A	320 mJ	82 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.011 ohm	13 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.