Infineon Technologies Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IRFH5110TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

114 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

252 A

93 mJ

63 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0124 ohm

11 A

DUAL

R-PDSO-N5

1

DRAIN

Not Qualified

e3

30

260

IRFH7446TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

468 A

152 mJ

85 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0033 ohm

85 A

DUAL

R-PDSO-F5

1

DRAIN

IRFR024NPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

68 A

71 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN OVER NICKEL

.075 ohm

17 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED, ULTRA-LOW RESISTANCE

TO-252AA

e3

30

260

IRFR3707ZTRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

220 A

42 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN OVER NICKEL

.0095 ohm

56 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

120 pF

IRLR3802PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

88 W

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

300 mJ

84 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.03 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

IRLZ24NPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

68 mJ

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.075 ohm

18 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-220AB

e3

SPA11N60C3E8185

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

33 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

340 mJ

11 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.38 ohm

11 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

SPA15N60CFDXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

460 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.33 ohm

13.4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

SPP15N60C3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

45 A

460 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.28 ohm

15 A

SINGLE

R-PSFM-T3

AVALANCHE RATED

TO-220AB

e3

SPU04N60C3BKMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

13.5 A

130 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.95 ohm

4.5 A

SINGLE

R-PSIP-T3

Not Qualified

AVALANCHE RATED

TO-251AA

NOT SPECIFIED

NOT SPECIFIED

AUIRF1018ES

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

315 A

88 mJ

79 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0084 ohm

79 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

TO-263AB

e3

AUIRF1404

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

333 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

808 A

620 mJ

160 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.004 ohm

160 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

AUIRFS3806

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

71 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

170 A

73 mJ

43 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0158 ohm

43 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-263AB

e3

30

260

BSC030N04NSGATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

115 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.003 ohm

23 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

e3

BSP297

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.64 A

.65 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

1.8 ohm

.66 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

BUZ31L

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

54 A

200 mJ

13.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.2 ohm

13.5 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

IPA050N10NM5SXKSA1

Infineon Technologies

Tin (Sn)

e3

NOT SPECIFIED

NOT SPECIFIED

IPA600N25NM3SXKSA1

Infineon Technologies

Tin (Sn)

e3

NOT SPECIFIED

NOT SPECIFIED

IPD60R360P7ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

26 A

27 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

TIN

.36 ohm

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

IPD80R2K8CEATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

42 W

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6 A

90 mJ

1.9 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

2.8 ohm

1.9 A

SINGLE

R-PSSO-G2

1

TO-252

e3

IPI110N20N3GAKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

352 A

560 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.011 ohm

88 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

e3

IPP110N20NAAKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

352 A

560 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.011 ohm

88 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IPW60R125CP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

82 A

708 mJ

25 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.125 ohm

25 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

IPW60R125CPFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

82 A

708 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.125 ohm

25 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

IRF100P219AKMA1

Infineon Technologies

Tin (Sn)

e3

NOT SPECIFIED

NOT SPECIFIED

IRF2907ZSTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

680 A

690 mJ

170 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0045 ohm

160 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-263AB

e3

30

260

IRF60B217

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

225 A

124 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.009 ohm

60 A

SINGLE

R-PSFM-T3

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IRF6668TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

89 W

UNSPECIFIED

SWITCHING

80 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

170 A

24 mJ

55 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.015 ohm

55 A

BOTTOM

R-XBCC-N3

1

DRAIN

Not Qualified

e1

30

260

IRF6712STRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

130 A

13 mJ

68 A

2

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.0049 ohm

17 A

BOTTOM

R-XBCC-N2

1

DRAIN

Not Qualified

e1

30

260

IRF7104TRPBF

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

10 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.25 ohm

2.3 A

DUAL

R-PDSO-G8

1

ULTRA LOW RESISTANCE

MS-012AA

e3

30

260

IRF7105TRPBF-1

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

14 A

3.5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.1 ohm

3.5 A

DUAL

R-PDSO-G8

1

MS-012AA

e3

30

260

IRF7831TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

170 A

100 mJ

21 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0036 ohm

21 A

DUAL

R-PDSO-G8

1

MS-012AA

e3

30

260

IRF7905TRPBF

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

71 A

18 mJ

8.9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0171 ohm

8.9 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

IRF8788TRPBF-1

Infineon Technologies

1

IRFR024NTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

68 A

71 mJ

17 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.075 ohm

17 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, ULTRA-LOW RESISTANCE

TO-252AA

e3

30

260

IRFS7540TRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

430 A

313 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0051 ohm

110 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

IRFZ44VZPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

92 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

230 A

73 mJ

57 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.012 ohm

57 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IRLR3110ZPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

140 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

250 A

140 mJ

63 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.014 ohm

42 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

SPA15N60C3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

45 A

460 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.28 ohm

15 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

e3

SPD06N60C3ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

18.6 A

200 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.75 ohm

6.2 A

SINGLE

R-PSSO-G2

1

DRAIN

HIGH VOLTAGE

TO-252AA

e3

BSC070N10NS3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

114 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

368 A

160 mJ

90 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.007 ohm

92 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

e3

260

21 pF

BSC100N03MSGATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

176 A

10 mJ

44 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.012 ohm

12 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

BSC196N10NSGATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

164 A

60 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0196 ohm

8.5 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

e3

IAUC80N04S6L032ATMA1

Infineon Technologies

TIN

1

e3

IAUT165N08S5N029ATMA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

167 W

PLASTIC/EPOXY

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

660 A

225 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0029 ohm

165 A

SINGLE

R-PSSO-F8

1

DRAIN

e3

54 pF

AEC-Q101

IAUT300N08S5N012ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

375 W

PLASTIC/EPOXY

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1200 A

817 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0012 ohm

300 A

SINGLE

R-PSSO-F8

DRAIN

130 pF

AEC-Q101

IPD60R380P6ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

83 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

29 A

210 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.38 ohm

10.6 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

IPD60R600PFD7SAUMA1

Infineon Technologies

Tin (Sn)

3

e3

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.