Infineon Technologies Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BSC059N04LSGATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

292 A

25 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0059 ohm

16 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

BSP320SH6327XTSA1/SAMPLE

Infineon Technologies

IPB054N08N3GATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

210 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0054 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

IPD60R280P7SAUMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

38 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-40 Cel

TIN

.28 ohm

SINGLE

R-PSSO-G2

3

TO-252

e3

IPD60R2K0C6ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6 A

11 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

2 ohm

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

IPD90N06S407ATMA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

79 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

67 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0069 ohm

90 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

70 pF

AEC-Q101

IPG16N10S461ATMA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

29 W

PLASTIC/EPOXY

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

64 A

33 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.061 ohm

16 A

DUAL

R-PDSO-F8

1

DRAIN

e3

20 pF

AEC-Q101

IPL60R360P6SATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

30 A

247 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.36 ohm

DUAL

R-PDSO-N5

1

DRAIN

e3

IPP032N06N3GXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

235 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0032 ohm

120 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IPP075N15N3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

780 mJ

100 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0075 ohm

100 A

SINGLE

R-PSFM-T3

1

Not Qualified

TO-220AB

e3

260

IPP80N08S2L07AKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

810 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0071 ohm

80 A

SINGLE

R-PSFM-T3

1

TO-220AB

e3

590 pF

AEC-Q101

IPW60R099P7XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

105 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

TIN

.099 ohm

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

IPW65R037C6FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

297 A

2185 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.037 ohm

SINGLE

R-PSFM-T3

TO-247

e3

IRF6662TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

89 W

UNSPECIFIED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

66 A

39 mJ

8.3 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.022 ohm

8.3 A

BOTTOM

R-XBCC-N3

1

DRAIN

Not Qualified

e1

30

260

IRFH5300TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

400 A

420 mJ

100 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0021 ohm

40 A

DUAL

R-PDSO-N5

1

DRAIN

Not Qualified

HIGH RELIABILITY

e3

40

260

JANSR2N7624U3

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

57 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

88 A

79 mJ

22 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

282 ns

-55 Cel

202 ns

.072 ohm

14.9 A

BOTTOM

R-CBCC-N3

DRAIN

HIGH RELIABILITY

MIL-19500; RH - 100K Rad(Si)

JANTX2N6756

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

METAL

SWITCHING

100 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

56 A

75 mJ

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.21 ohm

14 A

BOTTOM

O-MBFM-P2

DRAIN

Qualified

AVALANCHE RATED

TO-204AA

e0

MIL-19500/542

AUIRF8736M2TR

Infineon Technologies

N-CHANNEL

SINGLE

YES

63 W

1

137 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

137 A

1

AUIRF9Z34N

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

68 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

68 A

180 mJ

19 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.1 ohm

19 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

AUIRFP064N

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

390 A

480 mJ

110 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.008 ohm

110 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED, HIGH RELIABILITY

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

AUIRLS3036

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

380 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1100 A

290 mJ

195 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0024 ohm

195 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-263AB

e3

30

260

BSO201SPHXUMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

59.6 A

248 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.008 ohm

9.3 A

DUAL

R-PDSO-G8

3

Not Qualified

e3

IAUZ40N06S5L050ATMA1

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

IAUZ40N06S5N050ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

71 W

PLASTIC/EPOXY

60 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

241 A

115 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.005 ohm

40 A

DUAL

S-PDSO-N8

1

DRAIN

e3

26 pF

AEC-Q101

IPA60R099P6XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

34 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

109 A

796 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.099 ohm

37.9 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

IPA60R280P6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

39 A

285 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.28 ohm

13.8 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

IPA60R360P7SXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

26 A

27 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

-40 Cel

TIN

.36 ohm

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

IPB011N04LGXT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1260 A

525 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0014 ohm

180 A

SINGLE

R-PSSO-G6

DRAIN

LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

NOT SPECIFIED

NOT SPECIFIED

IPB65R065C7ATMA2

Infineon Technologies

1

IPB80N06S405ATMA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

152 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0057 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

IPC100N04S52R8ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

66 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

TIN

.0034 ohm

100 A

DUAL

R-PDSO-F8

1

DRAIN

e3

AEC-Q101

IPD320N20N3GXT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

136 A

190 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.032 ohm

34 A

SINGLE

R-PSSO-G2

DRAIN

TO-252AA

IPP530N15N3GXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

84 A

60 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.053 ohm

21 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IPP60R060P7XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

151 A

159 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

TIN

.06 ohm

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

e3

IPP65R150CFDXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

195.3 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

614 mJ

22.4 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Tin (Sn)

.15 ohm

22.4 A

SINGLE

R-PSFM-T3

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

IPP80N08S2L07XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

810 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0071 ohm

80 A

SINGLE

R-PSFM-T3

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IPW65R110CFDFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

277.8 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

99.6 A

845 mJ

31.2 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Tin (Sn)

.11 ohm

31.2 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

IRF7601TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.035 ohm

5.7 A

DUAL

R-PDSO-G8

1

ULTRA LOW RESISTANCE

IRF9530NSTRLHR

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

56 A

250 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.2 ohm

14 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED, HIGH RELIABILITY

IRFI4019H-117P

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

18 W

PLASTIC/EPOXY

AMPLIFIER

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

2

34 A

77 mJ

8.7 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.095 ohm

8.7 A

SINGLE

R-PSFM-T5

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRFP3306PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

220 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

620 A

184 mJ

160 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0042 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e3

IRFU4510PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

143 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

252 A

127 mJ

56 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0139 ohm

56 A

SINGLE

R-PSIP-T3

1

DRAIN

TO-251AA

IRFZ46NPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

107 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

152 mJ

53 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

88 W

175 Cel

SILICON

-55 Cel

TIN

.0165 ohm

39 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-220AB

e3

10

260

ISZ034N06LM5ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

83 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

448 A

121 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0034 ohm

112 A

DUAL

S-PDSO-N8

DRAIN

33 pF

IEC-61249-2-21; IEC-68-1

SPB11N60C3ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

33 A

340 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.38 ohm

11 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE RATED

TO-263AB

e3

SPP11N60C3XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

340 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.38 ohm

11 A

SINGLE

R-PSFM-T3

AVALANCHE RATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

AUIRFR4105ZTRL

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

48 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

29 mJ

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0245 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

TO-252AA

e3

BSC077N12NS3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

139 W

PLASTIC/EPOXY

SWITCHING

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

392 A

330 mJ

98 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.0077 ohm

98 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

e3

260

49 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.