Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
292 A |
25 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.0059 ohm |
16 A |
DUAL |
R-PDSO-F8 |
1 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e3 |
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Infineon Technologies |
||||||||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
150 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
320 A |
210 mJ |
80 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0054 ohm |
80 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-263AB |
e3 |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
36 A |
38 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-40 Cel |
TIN |
.28 ohm |
SINGLE |
R-PSSO-G2 |
3 |
TO-252 |
e3 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 A |
11 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
2 ohm |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-252 |
e3 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
79 W |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
360 A |
67 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0069 ohm |
90 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-252 |
e3 |
70 pF |
AEC-Q101 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
29 W |
PLASTIC/EPOXY |
100 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
64 A |
33 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.061 ohm |
16 A |
DUAL |
R-PDSO-F8 |
1 |
DRAIN |
e3 |
20 pF |
AEC-Q101 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
600 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30 A |
247 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.36 ohm |
DUAL |
R-PDSO-N5 |
1 |
DRAIN |
e3 |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
480 A |
235 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0032 ohm |
120 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
780 mJ |
100 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0075 ohm |
100 A |
SINGLE |
R-PSFM-T3 |
1 |
Not Qualified |
TO-220AB |
e3 |
260 |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
PLASTIC/EPOXY |
75 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
320 A |
810 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0071 ohm |
80 A |
SINGLE |
R-PSFM-T3 |
1 |
TO-220AB |
e3 |
590 pF |
AEC-Q101 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
105 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-55 Cel |
TIN |
.099 ohm |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-247 |
e3 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
297 A |
2185 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.037 ohm |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
89 W |
UNSPECIFIED |
SWITCHING |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
66 A |
39 mJ |
8.3 A |
3 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.022 ohm |
8.3 A |
BOTTOM |
R-XBCC-N3 |
1 |
DRAIN |
Not Qualified |
e1 |
30 |
260 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
250 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
420 mJ |
100 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0021 ohm |
40 A |
DUAL |
R-PDSO-N5 |
1 |
DRAIN |
Not Qualified |
HIGH RELIABILITY |
e3 |
40 |
260 |
|||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
57 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
60 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
88 A |
79 mJ |
22 A |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
282 ns |
-55 Cel |
202 ns |
.072 ohm |
14.9 A |
BOTTOM |
R-CBCC-N3 |
DRAIN |
HIGH RELIABILITY |
MIL-19500; RH - 100K Rad(Si) |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
METAL |
SWITCHING |
100 V |
PIN/PEG |
ROUND |
ENHANCEMENT MODE |
1 |
56 A |
75 mJ |
2 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.21 ohm |
14 A |
BOTTOM |
O-MBFM-P2 |
DRAIN |
Qualified |
AVALANCHE RATED |
TO-204AA |
e0 |
MIL-19500/542 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
63 W |
1 |
137 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
137 A |
1 |
||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
68 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
68 A |
180 mJ |
19 A |
3 |
FLANGE MOUNT |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.1 ohm |
19 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
390 A |
480 mJ |
110 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.008 ohm |
110 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED, HIGH RELIABILITY |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
380 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1100 A |
290 mJ |
195 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.0024 ohm |
195 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
TO-263AB |
e3 |
30 |
260 |
|||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
59.6 A |
248 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.008 ohm |
9.3 A |
DUAL |
R-PDSO-G8 |
3 |
Not Qualified |
e3 |
|||||||||||||||||||||||||
|
Infineon Technologies |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
71 W |
PLASTIC/EPOXY |
60 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
241 A |
115 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.005 ohm |
40 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN |
e3 |
26 pF |
AEC-Q101 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
34 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
109 A |
796 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.099 ohm |
37.9 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
32 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
39 A |
285 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.28 ohm |
13.8 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
26 A |
27 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-40 Cel |
TIN |
.36 ohm |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1260 A |
525 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0014 ohm |
180 A |
SINGLE |
R-PSSO-G6 |
DRAIN |
LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
Infineon Technologies |
1 |
||||||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
320 A |
152 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0057 ohm |
80 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-263AB |
e3 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
66 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-55 Cel |
TIN |
.0034 ohm |
100 A |
DUAL |
R-PDSO-F8 |
1 |
DRAIN |
e3 |
AEC-Q101 |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
136 A |
190 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.032 ohm |
34 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
TO-252AA |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
150 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
84 A |
60 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.053 ohm |
21 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
151 A |
159 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-55 Cel |
TIN |
.06 ohm |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-220AB |
e3 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
195.3 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
72 A |
614 mJ |
22.4 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Tin (Sn) |
.15 ohm |
22.4 A |
SINGLE |
R-PSFM-T3 |
TO-220AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
75 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
320 A |
810 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0071 ohm |
80 A |
SINGLE |
R-PSFM-T3 |
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
277.8 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
99.6 A |
845 mJ |
31.2 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Tin (Sn) |
.11 ohm |
31.2 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.035 ohm |
5.7 A |
DUAL |
R-PDSO-G8 |
1 |
ULTRA LOW RESISTANCE |
||||||||||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
56 A |
250 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.2 ohm |
14 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
AVALANCHE RATED, HIGH RELIABILITY |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
NO |
18 W |
PLASTIC/EPOXY |
AMPLIFIER |
150 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
34 A |
77 mJ |
8.7 A |
5 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.095 ohm |
8.7 A |
SINGLE |
R-PSFM-T5 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
220 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
620 A |
184 mJ |
160 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.0042 ohm |
120 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-247AC |
e3 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
143 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
252 A |
127 mJ |
56 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0139 ohm |
56 A |
SINGLE |
R-PSIP-T3 |
1 |
DRAIN |
TO-251AA |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
107 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
180 A |
152 mJ |
53 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
88 W |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0165 ohm |
39 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
TO-220AB |
e3 |
10 |
260 |
|||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
83 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
448 A |
121 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.0034 ohm |
112 A |
DUAL |
S-PDSO-N8 |
DRAIN |
33 pF |
IEC-61249-2-21; IEC-68-1 |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
33 A |
340 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.38 ohm |
11 A |
SINGLE |
R-PSSO-G2 |
1 |
Not Qualified |
AVALANCHE RATED |
TO-263AB |
e3 |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
33 A |
340 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.38 ohm |
11 A |
SINGLE |
R-PSFM-T3 |
AVALANCHE RATED |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
48 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
120 A |
29 mJ |
30 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.0245 ohm |
30 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY |
TO-252AA |
e3 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
139 W |
PLASTIC/EPOXY |
SWITCHING |
120 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
392 A |
330 mJ |
98 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.0077 ohm |
98 A |
DUAL |
R-PDSO-F8 |
1 |
DRAIN |
Not Qualified |
e3 |
260 |
49 pF |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.