Infineon Technologies Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IPD90R1K2C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

83 W

PLASTIC/EPOXY

SWITCHING

900 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

68 mJ

5.1 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

1.2 ohm

5.1 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

260

IPP65R150CFDAAKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

195.3 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

614 mJ

22.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.15 ohm

22.4 A

SINGLE

R-PSFM-T3

HIGH RELIABILITY

TO-220AB

e3

AEC-Q101

IRFH7085TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

590 A

554 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0032 ohm

23 A

DUAL

R-PDSO-N5

1

DRAIN

IRFR7546TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

280 A

178 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN OVER NICKEL

.0079 ohm

56 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

260

IRFR9024NCTRPBF

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44 A

62 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN OVER NICKEL

.175 ohm

11 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-252AA

e3

IRFTS9342TRPBF

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

46 A

5.8 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.04 ohm

5.8 A

DUAL

R-PDSO-G6

1

IRLB4132PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

620 A

310 mJ

150 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0035 ohm

78 A

SINGLE

R-PSFM-T3

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

440 pF

SPA11N80C3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

470 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.45 ohm

11 A

SINGLE

R-PSFM-T3

1

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

e3

SPW47N60CFD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

417 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

115 A

1800 mJ

46 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.083 ohm

46 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED, HIGH VOLTAGE

TO-247AA

e3

AUIRLR3410TR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

79 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

150 mJ

17 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.125 ohm

17 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-252AA

e3

BSC018N04LSGATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

295 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0025 ohm

30 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

BSC042NE7NS3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

75 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

400 A

220 mJ

100 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.0042 ohm

100 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

e3

260

40 pF

BSZ180P03NS3EGATMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

158 A

48 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.018 ohm

9 A

DUAL

S-PDSO-F8

1

DRAIN

Not Qualified

ESD PROTECTED

e3

IPA65R190CFDXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

34 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

57.2 A

484 mJ

17.5 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Tin (Sn)

.19 ohm

17.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

IPD60R600P7SAUMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

16 A

17 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-40 Cel

TIN

.6 ohm

SINGLE

R-PSSO-G2

3

TO-252

e3

IPG20N06S2L65ATMA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

40 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.065 ohm

20 A

DUAL

R-PDSO-F8

1

e3

AEC-Q101

IRF6614TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

40 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

102 A

22 mJ

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN SILVER COPPER

.0083 ohm

12.7 A

BOTTOM

R-XBCC-N3

1

DRAIN

Not Qualified

e1

30

260

IRF6643TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

89 W

UNSPECIFIED

SWITCHING

150 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

76 A

50 mJ

35 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.0345 ohm

6.2 A

BOTTOM

R-XBCC-N3

1

DRAIN

Not Qualified

e1

30

260

IRFB52N15DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

470 mJ

51 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.032 ohm

51 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

IRFR3518TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

150 A

160 mJ

38 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.029 ohm

38 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

IRL3803PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

470 A

610 mJ

120 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.006 ohm

140 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

AUIRF6218STRL

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

110 A

210 mJ

27 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.15 ohm

27 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AB

AEC-Q101

BSC010N04LS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

330 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0013 ohm

38 A

DUAL

R-PDSO-F8

1

DRAIN

e3

BSP89L6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

240 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.4 A

.35 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

6 ohm

.35 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

40

260

BSP89L6327HTSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

240 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.4 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

6 ohm

.35 A

DUAL

R-PDSO-G4

DRAIN

AEC-Q101

BSZ440N10NS3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

29 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

72 A

17 mJ

18 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.044 ohm

5.3 A

DUAL

S-PDSO-N8

1

DRAIN

Not Qualified

e3

260

BTS244ZE3062AATMA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

YES

170 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

188 A

1650 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

130 ns

-40 Cel

100 ns

TIN

.018 ohm

35 A

SINGLE

R-PSSO-G4

DRAIN

AVALANCHE RATED

TO-263

e3

400 pF

AEC-Q101

IGT60R190D1SATMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

55.5 W

PLASTIC/EPOXY

SWITCHING

600 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

23 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

GALLIUM NITRIDE

-55 Cel

.19 ohm

12.5 A

SINGLE

R-PSSO-F3

1

DRAIN

.15 pF

IPB80N06S407ATMA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

71 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0071 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

IPC50N04S55R8ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

200 A

30 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

TIN

.0072 ohm

50 A

DUAL

R-PDSO-F8

1

DRAIN

e3

AEC-Q101

IPD90N06S405ATMA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

135 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

TIN

.0051 ohm

90 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

AEC-Q101

IPN60R1K0PFD7SATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

6 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8.8 A

10 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

1 ohm

4.7 A

DUAL

R-PDSO-G3

1

DRAIN

e3

IPW60R099P6XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

278 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

109 A

796 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.099 ohm

37.9 A

SINGLE

R-PSFM-T3

TO-247

e3

IRF530NLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

79 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

93 mJ

17 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - with Nickel (Ni) barrier

.09 ohm

17 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-262AA

e3

30

260

JANSR2N7433

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

140 A

500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

250 ns

-55 Cel

330 ns

TIN LEAD

.077 ohm

35 A

SINGLE

S-CSFM-P3

Qualified

TO-254AA

e0

360 pF

MIL-19500/663

JANSR2N7433U

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

172 A

500 mJ

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

250 ns

-55 Cel

330 ns

TIN LEAD

.077 ohm

43 A

BOTTOM

R-CBCC-N3

DRAIN

Qualified

e0

360 pF

MIL-19500

SPD06N80C3BTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

18 A

230 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.9 ohm

6 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH VOLTAGE

TO-252AA

e3

40

260

SPP06N80C3XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

230 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.9 ohm

6 A

SINGLE

R-PSFM-T3

AVALANCHE RATED, HIGH VOLTAGE

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

SPP15N60C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

156 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

45 A

460 mJ

15 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.28 ohm

15 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

AUIRLR3410

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

79 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

150 mJ

17 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.125 ohm

17 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-252AA

e3

30

260

BSZ034N04LSATMA1/SAMPLE

Infineon Technologies

BSZ150N10LS3GATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

160 A

80 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.02 ohm

40 A

DUAL

S-PDSO-N8

1

DRAIN

e3

IAUC24N10S5L300ATMA1

Infineon Technologies

Tin (Sn)

1

e3

NOT SPECIFIED

NOT SPECIFIED

IPD78CN10NGATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

52 A

17 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.078 ohm

13 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

IPD80R2K7C3AATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6 A

90 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-40 Cel

TIN

2.7 ohm

2 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

AEC-Q101

IPG20N06S2L35ATMA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

100 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.035 ohm

20 A

DUAL

R-PDSO-F8

1

e3

AEC-Q101

IPL60R160CFD7AUMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

95 W

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

58 A

68 mJ

16 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

.16 ohm

16 A

SINGLE

S-PSSO-N4

2A

DRAIN

e3

IPP023N04NGHKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

150 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.0023 ohm

90 A

SINGLE

R-PSFM-T3

ULTRA-LOW RESISTANCE

TO-220AB

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.