Infineon Technologies Power Field Effect Transistors (FET) 2,400+

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BSP316PL6327HTSA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.72 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn)

1.8 ohm

.68 A

DUAL

R-PDSO-G4

DRAIN

LOGIC LEVEL COMPATIBLE

e3

40

260

IPA075N15N3GXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

172 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0075 ohm

43 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

IPW60R099CPFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

93 A

800 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.099 ohm

31 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

IRF640NSTRLHR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

72 A

247 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.15 ohm

18 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

IRF8302MTRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

UNSPECIFIED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

250 A

260 mJ

31 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.0018 ohm

31 A

BOTTOM

R-XBCC-N3

1

DRAIN

e1

30

260

IRF9333TRPBF

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

75 A

100 mJ

9.2 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0194 ohm

9.2 A

DUAL

R-PDSO-G8

1

Not Qualified

MS-012AA

IRFR120ZTRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

35 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

35 A

18 mJ

8.7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN OVER NICKEL

.19 ohm

8.7 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-252AA

e3

30

260

SPD02N80C3BT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

42 W

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6 A

90 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

2.7 ohm

2 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

SPD08P06PGBTMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

35.2 A

70 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.3 ohm

8.8 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE RATED

TO-252

e3

BSC076N06NS3GXT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

200 A

47 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0076 ohm

14 A

DUAL

R-PDSO-N8

DRAIN

NOT SPECIFIED

NOT SPECIFIED

BSP296NH6327

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.6 A

15 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.6 ohm

1.2 A

DUAL

R-PDSO-G4

DRAIN

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

AEC-Q101

IPD70R950CEAUMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

700 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

50 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-40 Cel

TIN

.95 ohm

SINGLE

R-PSSO-G2

3

DRAIN

TO-252

e3

IRF640NSTRRHR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

72 A

247 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.15 ohm

18 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

IRFB4710PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

190 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.014 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

SPD02N80C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

42 W

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6 A

90 mJ

2 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

2.7 ohm

2 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH VOLTAGE

TO-252AA

e3

260

SPP07N60C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

83 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

21.9 A

230 mJ

7.3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.6 ohm

7.3 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e3

AUIRFS8407TRL

Infineon Technologies

N-CHANNEL

SINGLE

YES

230 W

1

195 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

195 A

1

AUIRFS8408-7P

Infineon Technologies

N-CHANNEL

SINGLE

YES

294 W

1

240 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

240 A

1

AUIRLR3410TRL

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

79 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

150 mJ

17 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.125 ohm

17 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-252AA

e3

BSC050N04LSGATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

340 A

35 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0072 ohm

18 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

BSC120N03LSGATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

156 A

10 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.012 ohm

12 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

BSP373NH6327XTSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7.3 A

33 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

15.81 ns

-55 Cel

53.2 ns

TIN

.24 ohm

1.8 A

DUAL

R-PDSO-G4

1

DRAIN

AVALANCHE RATED

e3

21 pF

AEC-Q101

IPD70R2K0CEAUMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

700 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6.3 A

11 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

2 ohm

SINGLE

R-PSSO-G2

3

DRAIN

TO-252

e3

30

260

IPI075N15N3GXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

780 mJ

100 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0075 ohm

100 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

e3

IPL60R199CPAUMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

51 A

436 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.199 ohm

SINGLE

S-PSSO-N4

2A

DRAIN

Not Qualified

e3

IPL60R2K1C6SATMA1

Infineon Technologies

1

IPN60R2K0PFD7SATMA1

Infineon Technologies

Tin (Sn)

1

e3

NOT SPECIFIED

NOT SPECIFIED

IRF7205TRPBF-1

Infineon Technologies

1

IRF7455TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

200 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0075 ohm

15 A

DUAL

R-PDSO-G8

1

AVALANCHE RATED

MS-012AA

IRFB4110GPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

370 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

670 A

190 mJ

180 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0045 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IRFP150MPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

140 A

420 mJ

42 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.036 ohm

42 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

SPD18P06PGBT

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

74.4 A

150 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.13 ohm

18.6 A

SINGLE

R-PSSO-G2

AVALANCHE RATED

TO-252AB

SPP17N80C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

51 A

670 mJ

17 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.29 ohm

17 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

AUIRF1404S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

650 A

519 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - with Nickel (Ni) barrier

.004 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-263AB

e3

30

260

AUIRF3710Z

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

200 mJ

59 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

94 ns

-55 Cel

97 ns

.018 ohm

59 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

150 pF

AEC-Q101

BSC036NE7NS3GATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

75 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

400 A

260 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0036 ohm

20 A

DUAL

R-PDSO-N8

1

DRAIN

e3

IPB80N08S2L07ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

810 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.009 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

260

590 pF

AEC-Q101

IRF7343TR

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

38 A

72 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.05 ohm

4.7 A

DUAL

R-PDSO-G8

2

Not Qualified

HIGH RELIABILITY

MS-012AA

e3

IRFB4020PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

AMPLIFIER

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

94 mJ

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.1 ohm

18 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IRFB5615PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

144 W

PLASTIC/EPOXY

AMPLIFIER

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

140 A

109 mJ

35 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.039 ohm

35 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IRFR1018ETRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

315 A

88 mJ

79 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0084 ohm

56 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

IRFR2407TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

170 A

130 mJ

42 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.026 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-252AA

e3

30

260

IRFS7730TRL7PP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

375 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

990 A

897 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN OVER NICKEL

.002 ohm

269 A

SINGLE

R-PSSO-G6

1

DRAIN

TO-263CB

e3

30

260

720 pF

BSC120N03MSGATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

156 A

10 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.012 ohm

11 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

IPD180N10N3GATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

172 A

50 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.018 ohm

43 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

IPD90N03S4L03ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

85 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0033 ohm

90 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

AEC-Q101

IPDD60R080G7XTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

174 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

83 A

97 mJ

29 A

10

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.08 ohm

29 A

DUAL

R-PDSO-G10

1

TO-252

e3

IPT60R028G7XTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

245 A

288 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

TIN

.028 ohm

75 A

SINGLE

R-PSSO-F3

1

DRAIN

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.