Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
YES |
2 W |
30 V |
2 |
6.5 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.029 ohm |
6.5 A |
1 |
MS-012AA |
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|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
27 A |
7.7 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
25 W |
150 Cel |
SILICON |
36 ns |
-55 Cel |
165 ns |
Matte Tin (Sn) |
.04 ohm |
7.7 A |
DUAL |
R-PDSO-G8 |
1 |
LOGIC LEVEL COMPATIBLE |
MS-012AA |
e3 |
30 |
260 |
340 pF |
|||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
66 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.025 ohm |
8.3 A |
DUAL |
R-PDSO-G8 |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
156 W |
30 V |
1 |
43 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
.0017 ohm |
43 A |
1 |
||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
580 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
380 A |
1010 mJ |
9 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.023 ohm |
90 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-247AC |
e3 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
294 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
780 A |
1098 mJ |
320 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.0016 ohm |
195 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-263AB |
e3 |
30 |
260 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
.36 W |
ENHANCEMENT MODE |
1 |
.2 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
.2 A |
1 |
260 |
||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
231 W |
1 |
240 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
240 A |
1 |
||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
160 A |
130 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0032 ohm |
22 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN |
e3 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
38 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
52 A |
30 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.09 ohm |
13 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN |
Not Qualified |
e3 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
480 A |
1060 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-55 Cel |
TIN |
.0021 ohm |
120 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
GREEN |
TO-263AB |
e3 |
AEC-Q101 |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
380 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1390 A |
290 mJ |
350 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.0017 ohm |
195 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-247AC |
e3 |
||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
110 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
44 A |
310 mJ |
13 A |
2 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.295 ohm |
13 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-252AA |
e3 |
30 |
260 |
||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
51 A |
670 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.29 ohm |
17 A |
SINGLE |
R-PSFM-T3 |
AVALANCHE RATED, HIGH VOLTAGE |
TO-247 |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1440 A |
1450 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.00069 ohm |
360 A |
SINGLE |
R-PSSO-G6 |
1 |
DRAIN |
AEC-Q101 |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
1445 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0048 ohm |
100 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
TO-263AB |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
320 A |
64 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
Tin (Sn) |
.0049 ohm |
80 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-263AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
AEC-Q101 |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
149 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0031 ohm |
100 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-252AA |
e3 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
63 W |
PLASTIC/EPOXY |
SWITCHING |
800 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
12 A |
170 mJ |
3.9 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
1.4 ohm |
3.9 A |
SINGLE |
R-PSSO-G2 |
1 |
TO-252 |
e3 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
82 A |
19 mJ |
10 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
1.3 W |
150 Cel |
SILICON |
-55 Cel |
.0134 ohm |
10 A |
DUAL |
R-PDSO-G8 |
1 |
MS-012AA |
160 pF |
|||||||||||||||||||||
|
Infineon Technologies |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
1 |
||||||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
33 A |
470 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.45 ohm |
11 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
AVALANCHE RATED |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
18 A |
230 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.9 ohm |
6 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
AVALANCHE RATED, HIGH VOLTAGE |
TO-220AB |
e3 |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
33 A |
470 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.45 ohm |
11 A |
SINGLE |
R-PSFM-T3 |
AVALANCHE RATED |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
57 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
64 A |
150 mJ |
18 A |
2 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.11 ohm |
18 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY |
TO-252AA |
e3 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.5 W |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
7.2 A |
1.7 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.5 ohm |
1.8 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
Not Qualified |
e3 |
||||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
11.6 A |
150 mJ |
2.9 A |
4 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.13 ohm |
2.9 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e3 |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
500 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6.1 A |
34 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-55 Cel |
TIN |
2 ohm |
SINGLE |
R-PSSO-G2 |
3 |
TO-252 |
e3 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
280 A |
410 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0116 ohm |
70 A |
SINGLE |
R-PSIP-T3 |
TO-262AA |
e3 |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
150 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
332 A |
330 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0111 ohm |
83 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||||||
|
Infineon Technologies |
TIN |
e3 |
|||||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
89 W |
UNSPECIFIED |
SWITCHING |
80 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
96 A |
230 mJ |
68 A |
3 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.0095 ohm |
12 A |
BOTTOM |
R-XBCC-N3 |
1 |
DRAIN |
Not Qualified |
e1 |
30 |
260 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
140 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
560 A |
530 mJ |
140 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.0045 ohm |
30 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-252AA |
e3 |
30 |
260 |
|||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
42 W |
PLASTIC/EPOXY |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
35.2 A |
70 mJ |
8.8 A |
3 |
FLANGE MOUNT |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.3 ohm |
8.8 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e3 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
313 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
103.8 A |
1500 mJ |
34.6 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.1 ohm |
34.6 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
AVALANCHE RATED, HIGH VOLTAGE |
TO-247AA |
e3 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
.2 W |
DUAL GATE, DEPLETION MODE |
1 |
.03 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
.03 A |
1 |
260 |
||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
168 A |
50 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.016 ohm |
8.8 A |
DUAL |
R-PDSO-N8 |
DRAIN |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR |
NO |
750 W |
PLASTIC/EPOXY |
SWITCHING |
1200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
504 A |
638 mJ |
4 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON CARBIDE |
-55 Cel |
.0111 ohm |
225 A |
SINGLE |
R-PSFM-T4 |
TO-247 |
61 pF |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
480 A |
480 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0018 ohm |
120 A |
SINGLE |
R-PSSO-G2 |
1 |
TO-263AB |
e3 |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
391 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
137 A |
1160 mJ |
43.3 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.08 ohm |
43.3 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
e3 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
140 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
340 A |
99 mJ |
75 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0085 ohm |
75 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED, ULTRA-LOW RESISTANCE |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
89 W |
UNSPECIFIED |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
250 A |
260 mJ |
192 A |
3 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.0015 ohm |
34 A |
BOTTOM |
R-XBCC-N3 |
1 |
DRAIN |
ULTRA LOW RESISTANCE |
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|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
68 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
65 mJ |
29 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.04 ohm |
29 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
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|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
417 W |
PLASTIC/EPOXY |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
156 A |
1800 mJ |
52 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.07 ohm |
52 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
AVALANCHE RATED |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
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|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
87 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0078 ohm |
50 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-252 |
e3 |
260 |
AEC-Q101 |
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|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
59.5 W |
PLASTIC/EPOXY |
SWITCHING |
700 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
34 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-40 Cel |
TIN |
.36 ohm |
12.5 A |
SINGLE |
R-PSSO-G2 |
3 |
DRAIN |
TO-252 |
e3 |
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|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
43 W |
PLASTIC/EPOXY |
55 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
80 A |
40 mJ |
20 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.065 ohm |
20 A |
DUAL |
R-PDSO-F8 |
1 |
e3 |
50 pF |
AEC-Q101 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.