Infineon Technologies - SPA11N80C3XKSA2

SPA11N80C3XKSA2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SPA11N80C3XKSA2
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY; Terminal Position: SINGLE;
Datasheet SPA11N80C3XKSA2 Datasheet
In Stock595
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 11 A
Maximum Pulsed Drain Current (IDM): 33 A
Surface Mount: NO
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .45 ohm
Avalanche Energy Rating (EAS): 470 mJ
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 800 V
Additional Features: AVALANCHE RATED
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
595 - -

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