Infineon Technologies Power Field Effect Transistors (FET) 2,400+

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IRFP4332PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

360 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

230 A

210 mJ

57 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.033 ohm

57 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

ULTRA LOW ON-RESISTANCE

TO-247AC

e3

IRFR3410TRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

125 A

140 mJ

31 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.039 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

IRFR5505TRRPBF

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

57 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

64 A

150 mJ

18 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - with Nickel (Ni) barrier

.11 ohm

18 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-252AA

e3

30

260

IRFS7430TRL7PP

Infineon Technologies

N-CHANNEL

SINGLE

YES

375 W

1

522 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN OVER NICKEL

522 A

1

e3

30

260

IRFSL4410ZPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

390 A

242 mJ

97 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.009 ohm

97 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

TO-262AA

e3

30

260

IRFU5505PBF

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

57 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

64 A

150 mJ

18 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN OVER NICKEL

.11 ohm

18 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-251AA

e3

30

260

IRL3705NSTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

310 A

340 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN OVER NICKEL

.012 ohm

89 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

e3

30

260

IRL530NLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

79 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

150 mJ

17 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - with Nickel (Ni) barrier

.12 ohm

17 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-262AA

e3

30

260

IRLI3705NPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

310 A

340 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.012 ohm

52 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

e3

JANTXV2N6798

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

METAL

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

22 A

2 mJ

5.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.42 ohm

5.5 A

BOTTOM

O-MBCY-W3

DRAIN

Qualified

HIGH RELIABILITY

TO-205AF

e0

MIL-19500/557

SPA15N60C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

34 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

45 A

460 mJ

15 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.28 ohm

15 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

e3

SPD04N60C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

13.5 A

130 mJ

4.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.95 ohm

4.5 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-252AA

e3

SPP11N80C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

156 W

PLASTIC/EPOXY

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

470 mJ

11 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.45 ohm

11 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

AUIRF1405ZSTRL

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

600 A

270 mJ

150 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0049 ohm

150 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

TO-263AB

e3

AUIRF6215STRL

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44 A

310 mJ

13 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.29 ohm

13 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AB

AEC-Q101

AUIRF7669L2TR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

UNSPECIFIED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

460 A

850 mJ

375 A

9

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0044 ohm

19 A

BOTTOM

R-XBCC-N9

1

DRAIN

Not Qualified

HIGH RELIABILITY

e3

40

260

AUIRFS3107-7TRL

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

370 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1060 A

320 mJ

240 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0026 ohm

240 A

SINGLE

R-PSSO-G6

1

DRAIN

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-263CB

e3

BF2030-E6814

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.04 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.04 A

260

BSB014N04LX3GXT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

89 W

METAL

SWITCHING

40 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

400 A

260 mJ

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

.0014 ohm

180 A

BOTTOM

R-MBCC-N3

DRAIN

BSB014N04LX3GXUMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

89 W

METAL

SWITCHING

40 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

400 A

260 mJ

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

SILVER NICKEL

.0014 ohm

180 A

BOTTOM

R-MBCC-N3

3

DRAIN

Not Qualified

e4

BSC005N03LS5IATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

188 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1731 A

430 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.00095 ohm

433 A

DUAL

R-PDSO-F8

1

DRAIN

e3

240 pF

IEC-61249-2-21; IEC-68-1

BSL207SPH6327XTSA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

44 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.041 ohm

6 A

DUAL

R-PDSO-G6

1

AVALANCHE RATED

e3

BSP324L6327HTSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

400 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.68 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

13.5 ns

-55 Cel

127 ns

25 ohm

.17 A

DUAL

R-PDSO-G4

DRAIN

LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

5.7 pF

AEC-Q101

BUZ111S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

700 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.008 ohm

80 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e0

BUZ31-E3046

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

54 A

200 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.2 ohm

13.5 A

SINGLE

R-PSIP-T3

Not Qualified

e3

IPB65R150CFDAATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

195.3 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

72 A

614 mJ

22.4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.15 ohm

22.4 A

SINGLE

R-PSSO-G2

1

DRAIN

HIGH RELIABILITY

TO-263AB

e3

AEC-Q101

IPD70N03S4L04ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

280 A

57 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0043 ohm

70 A

SINGLE

R-PSSO-G2

1

DRAIN

ULTRA LOW RESISTANCE

TO-252

e3

AEC-Q101

IPL60R125C7AUMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

103 W

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

66 A

78 mJ

17 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

.125 ohm

17 A

SINGLE

S-PSSO-N4

2A

DRAIN

e3

IPP023N04NG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

167 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

150 mJ

90 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0023 ohm

90 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IPP029N06NAKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

110 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0029 ohm

24 A

SINGLE

R-PSFM-T3

TO-220AB

e3

IPP90R340C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

34 A

678 mJ

15 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.34 ohm

15 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IRF2807STRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

280 A

340 mJ

82 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.013 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

e3

30

260

IRF6645TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

42 W

UNSPECIFIED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

45 A

29 mJ

5.7 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.035 ohm

5.7 A

BOTTOM

R-XBCC-N3

1

DRAIN

Not Qualified

e1

30

260

IRF7410TR

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

65 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.007 ohm

16 A

DUAL

R-PDSO-G8

2

Not Qualified

MS-012AA

e3

IRF7425

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0082 ohm

15 A

DUAL

R-PDSO-G8

1

Not Qualified

ULTRA LOW RESISTANCE

MS-012AA

e0

IRF9530NLPBF

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

56 A

250 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.2 ohm

14 A

SINGLE

R-PSIP-T3

DRAIN

AVALANCHE RATED

TO-262AA

IRFB3207ZPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

670 A

170 mJ

170 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0041 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IRFF9130

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

METAL

SWITCHING

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

25 A

92 mJ

6.5 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN LEAD

.345 ohm

6.5 A

BOTTOM

O-MBCY-W3

Not Qualified

TO-205AF

e0

IRFR13N15DTRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

86 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

56 A

130 mJ

14 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.18 ohm

14 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

IRL1004SPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.1 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

520 A

700 mJ

110 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN OVER NICKEL

.0065 ohm

130 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

e3

30

260

SPD18P06P

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

74.4 A

150 mJ

18.6 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.13 ohm

18.6 A

SINGLE

R-PSSO-G2

3

Not Qualified

AVALANCHE RATED

TO-252

e3

260

SPW35N60CFD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

313 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

85 A

1300 mJ

34.1 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.118 ohm

34.1 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED, HIGH VOLTAGE

TO-247AA

e3

BSC028N06LS3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

139 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

298 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.0028 ohm

100 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

40

260

BSC050N03LSGXT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

320 A

35 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.0075 ohm

18 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

BSO612CVG

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

12 A

47 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.12 ohm

3 A

DUAL

R-PDSO-G8

3

AVALANCHE RATED

260

AEC-Q101

BUZ103SE3045A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

124 A

140 mJ

31 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin/Lead (Sn/Pb)

.036 ohm

31 A

SINGLE

R-PSSO-G2

Not Qualified

AVALANCHE RATED

TO-263AB

e0

IPB45N06S4L08ATMA3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

97 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0079 ohm

45 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

IPD220N06L3GBTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

13 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.022 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252AA

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.