Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
33 A |
460 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.33 ohm |
13.4 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247AD |
e3 |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
156 A |
1800 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.07 ohm |
52 A |
SINGLE |
R-PSFM-T3 |
AVALANCHE RATED |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
110 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
44 A |
310 mJ |
13 A |
3 |
FLANGE MOUNT |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.29 ohm |
13 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
163 W |
1 |
120 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
120 A |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
25 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
18 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0022 ohm |
33 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
160 A |
80 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0028 ohm |
25 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
e3 |
|||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
PLASTIC/EPOXY |
1000 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
24 A |
830 mJ |
6 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
1.5 ohm |
6 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
AVALANCHE RATED |
TO-218AA |
e0 |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
95 W |
PLASTIC/EPOXY |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
58 A |
200 mJ |
14.5 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.2 ohm |
14.5 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-263AB |
245 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
58 A |
200 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.2 ohm |
14.5 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-263AB |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1260 A |
610 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.0013 ohm |
180 A |
SINGLE |
R-PSSO-G6 |
1 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE |
TO-263AA |
e3 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
83 A |
97 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-55 Cel |
.099 ohm |
22 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-263AB |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
650 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
34.4 A |
290 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.31 ohm |
11.4 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
HIGH RELIABILITY |
TO-263AB |
e3 |
AEC-Q101 |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
240 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0144 ohm |
50 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
ULTRA-LOW RESISTANCE |
TO-252 |
e3 |
AEC-Q101 |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
80 A |
230 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0076 ohm |
20 A |
DUAL |
R-PDSO-F8 |
1 |
e3 |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
650 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
41 A |
48 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-40 Cel |
TIN |
.23 ohm |
10 A |
SINGLE |
S-PSSO-N4 |
2A |
DRAIN |
e3 |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
211 A |
249 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.04 ohm |
50 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-220AB |
e3 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
51 A |
436 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.199 ohm |
16 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
375 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1524 A |
760 mJ |
195 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0013 ohm |
195 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
68 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
65 mJ |
27 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.045 ohm |
20 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED, ULTRA-LOW RESISTANCE |
TO-252AA |
e3 |
30 |
260 |
||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
107 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
180 A |
152 mJ |
53 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.0165 ohm |
39 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY |
e3 |
30 |
260 |
|||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
YES |
25 W |
ENHANCEMENT MODE |
58 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
58 A |
1 |
|||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
79 A |
9.9 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.0146 ohm |
9.9 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
HIGH RELIABILITY |
MS-012AA |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
79 A |
9.9 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0146 ohm |
9.9 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
HIGH RELIABILITY |
MS-012AA |
e3 |
30 |
260 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
68 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
110 A |
110 mJ |
28 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Matte Tin (Sn) - with Nickel (Ni) barrier |
.051 ohm |
28 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
TO-252AA |
e3 |
30 |
260 |
||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
380 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1100 A |
290 mJ |
270 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.0024 ohm |
195 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-263AB |
e3 |
|||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
125 W |
CERAMIC, METAL-SEALED COFIRED |
SWITCHING |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
72 A |
500 mJ |
18 A |
3 |
CHIP CARRIER |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.22 ohm |
18 A |
BOTTOM |
R-CBCC-N3 |
DRAIN |
Qualified |
HIGH RELIABILITY |
e0 |
MIL-19500/595 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
63 A |
690 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.19 ohm |
21 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e3 |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
51 A |
670 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.29 ohm |
17 A |
SINGLE |
R-PSFM-T3 |
AVALANCHE RATED |
TO-220AB |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
63 A |
690 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.19 ohm |
21 A |
SINGLE |
R-PSFM-T3 |
AVALANCHE RATED |
TO-220AB |
e3 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
48 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
120 A |
29 mJ |
30 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.0245 ohm |
30 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY |
TO-252AA |
e3 |
30 |
260 |
||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
295 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.0019 ohm |
29 A |
DUAL |
R-PDSO-F8 |
1 |
DRAIN |
Not Qualified |
e3 |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
150 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
128 A |
30 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.03 ohm |
32 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN |
e3 |
|||||||||||||||||||||||||
|
Infineon Technologies |
Tin (Sn) |
1 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
22 A |
246 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.35 ohm |
10 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
26 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
51 A |
60 mJ |
8 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.17 ohm |
8 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
700 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
15.4 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-40 Cel |
TIN |
.75 ohm |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
||||||||||||||||||||||||||
|
Infineon Technologies |
TIN |
e3 |
|||||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
650 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
17 A |
115 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.66 ohm |
6 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-252AA |
e3 |
AEC-Q101 |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
480 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0014 ohm |
100 A |
DUAL |
R-PDSO-F8 |
1 |
DRAIN |
e3 |
AEC-Q101 |
|||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
75 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
120 A |
240 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.026 ohm |
30 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
ULTRA-LOW RESISTANCE |
TO-252 |
AEC-Q101 |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
300 A |
72 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0059 ohm |
75 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-252 |
e3 |
AEC-Q101 |
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|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
800 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
12 A |
170 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-55 Cel |
TIN |
1.4 ohm |
3.9 A |
SINGLE |
R-PSSO-G2 |
1 |
TO-252 |
e3 |
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|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
480 A |
235 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0032 ohm |
120 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
TO-262AA |
e3 |
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|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
780 mJ |
100 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0075 ohm |
100 A |
SINGLE |
R-PSIP-T3 |
1 |
Not Qualified |
TO-262AA |
e3 |
40 |
260 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
89 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
22 A |
246 mJ |
10 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.35 ohm |
10 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
TO-262AA |
e3 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
176 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
68 A |
497 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.16 ohm |
23.8 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-220AB |
e3 |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
59 A |
418 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.19 ohm |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
22 A |
20 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-55 Cel |
TIN |
.6 ohm |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-220AB |
e3 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.