Littelfuse Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IXFK27N80	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	108 A		27 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	500 W	150 Cel	SILICON				TIN SILVER COPPER	.3 ohm	27 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-264AA	e1	10	260
IXFK32N100Q3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	96 A	2000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN SILVER COPPER	.32 ohm	32 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	67 pF
IXFK360N10T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	900 A	3000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN SILVER COPPER	.0029 ohm	360 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	400 pF
IXFK360N15T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1670 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	900 A			3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN SILVER COPPER	.004 ohm	360 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	665 pF
IXFK420N10T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1670 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	1000 A	5000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN SILVER COPPER	.0026 ohm	420 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	530 pF
IXFK44N50P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	110 A	1700 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.14 ohm	44 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-264AA	e1	10	260
IXFK52N100X	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A	3000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.125 ohm	52 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE RATED	TO-264AA				123 pF
IXFK73N30	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	292 A		73 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	500 W	150 Cel	SILICON				TIN SILVER COPPER	.045 ohm	73 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-264	e1	10	260
IXFK80N50Q3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	5000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN SILVER COPPER	.065 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	115 pF
IXFK90N30	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	560 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	360 A	3000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.033 ohm	90 A	SINGLE	R-PSFM-T3		DRAIN			TO-264AA				700 pF
IXFK98N50P3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1300 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	245 A	4500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN SILVER COPPER	.05 ohm	98 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	11 pF
IXFM20N60	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	METAL	SWITCHING	600 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	80 A		20 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON					.35 ohm	20 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified	AVALANCHE RATED	TO-204		NOT SPECIFIED	NOT SPECIFIED
IXFM40N30	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	METAL	SWITCHING	300 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	160 A			2	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	120 ns	-55 Cel	190 ns		.088 ohm	40 A	BOTTOM	O-MBFM-P2		DRAIN			TO-204AE				280 pF
IXFN100N50Q3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	960 W	PLASTIC/EPOXY	SWITCHING	500 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	300 A	5000 mJ	82 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.049 ohm	82 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified							UL RECOGNIZED
IXFN110N85X	Littelfuse
IXFN132N50P3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1500 W	PLASTIC/EPOXY	SWITCHING	500 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	330 A	3000 mJ	112 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.039 ohm	112 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED						UL RECOGNIZED
IXFN200N07	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	520 W	PLASTIC/EPOXY	SWITCHING	70 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	600 A	2000 mJ	200 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	520 W	150 Cel	SILICON				NICKEL	.006 ohm	200 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED
IXFN21N100Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	520 W	PLASTIC/EPOXY	SWITCHING	1000 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	84 A	2500 mJ	21 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL	.5 ohm	21 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED
IXFN240N25X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	695 W	PLASTIC/EPOXY	SWITCHING	250 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	600 A	3000 mJ		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.0045 ohm	240 A	UPPER	R-PUFM-X4		ISOLATED		AVALANCHE RATED					1.5 pF	UL RECOGNIZED
IXFN26N90	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	600 W	PLASTIC/EPOXY	SWITCHING	900 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	104 A	3000 mJ		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.3 ohm	26 A	UPPER	R-PUFM-X4		ISOLATED		AVALANCHE RATED					375 pF	UL RECOGNIZED
IXFN27N80	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	520 W	PLASTIC/EPOXY	SWITCHING	800 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	108 A		27 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	520 W	150 Cel	SILICON				NICKEL	.3 ohm	27 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED
IXFN40N110P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	1100 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	100 A	2000 mJ	34 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL	.26 ohm	34 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED						UL RECOGNIZED
IXFN48N50Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	500 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	192 A	2500 mJ	48 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL	100 ohm	48 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED
IXFN70N60Q2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	600 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	280 A	5000 mJ	70 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL	.08 ohm	70 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED
IXFP110N15T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	480 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A	800 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.013 ohm	110 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220AB				77 pF
IXFP14N60P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	42 A	900 mJ	14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.55 ohm	14 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e3
IXFP14N85XM	Littelfuse
IXFP22N65X2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	390 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	1000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.145 ohm	22 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220AB				1.3 pF
IXFP4N100Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	700 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Pure Tin (Sn)	3 ohm	4 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
IXFP4N85X	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	850 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	125 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.0025 ohm	3.5 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220AB				5 pF
IXFP56N30X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	320 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	112 A	700 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.027 ohm	56 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220AB				3 pF
IXFP7N100P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	300 mJ	7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					1.9 ohm	7 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
IXFQ140N20X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	480 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	250 A	1700 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.0096 ohm	140 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED					4.6 pF
IXFR180N15P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	380 A	4000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN SILVER COPPER	.013 ohm	100 A	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	AVALANCHE RATED		e1	10	260		UL RECOGNIZED
IXFR18N90P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	800 mJ	10.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.66 ohm	10.5 A	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	AVALANCHE RATED		e1	10	260		UL RECOGNIZED
IXFR24N100Q3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	2000 mJ	18 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.49 ohm	18 A	SINGLE	R-PSIP-T3		ISOLATED		AVALANCHE RATED		e1	10	260		UL RECOGNIZED
IXFR26N120P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	320 W	PLASTIC/EPOXY	SWITCHING	1200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	1500 mJ	15 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.5 ohm	15 A	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	AVALANCHE RATED		e1	10	260		UL RECOGNIZED
IXFR44N50P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	132 A	1700 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.15 ohm	24 A	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	AVALANCHE RATED		e1	10	260		UL RECOGNIZED
IXFR80N50Q3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	570 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	5000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN SILVER COPPER	.072 ohm	50 A	SINGLE	R-PSIP-T3		ISOLATED		AVALANCHE RATED, UL RECOGNIZED		e1	10	260	115 pF
IXFT140N10P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	300 A	2500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.011 ohm	140 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-268AA	e3	10	260
IXFT150N20T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	890 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	375 A	1500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.015 ohm	150 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-268AA	e3	10	260	162 pF
IXFT320N10T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1000 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	800 A	1500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0035 ohm	320 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-268AA	e3	10	260	450 pF
IXFT6N100Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	180 W	PLASTIC/EPOXY	SWITCHING	1000 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A	700 mJ	6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2 ohm	6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-268	e3	10	260
IXFT70N20Q3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	690 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	210 A	1500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.04 ohm	70 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-268AA	e3	10	260	100 pF
IXFT96N20P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	225 A	1500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.024 ohm	96 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-268AA	e3	10	260
IXFX100N65X2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1040 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	3500 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.03 ohm	100 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE RATED					2.6 pF
IXFX180N25T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1390 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	500 A	5000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.0129 ohm	180 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE RATED					47 pF
IXFX200N10P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	830 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	400 A	4000 mJ	200 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN SILVER COPPER	.0075 ohm	200 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED		e1

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.