Littelfuse Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IXTY1R4N120P	Littelfuse	N-CHANNEL	SINGLE	YES	86 W							1			1.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			MATTE TIN		1.4 A			1					e3	10	260
IXTY1R4N120PHV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	86 W	PLASTIC/EPOXY	SWITCHING	1200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3 A	150 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	13 ohm	1.4 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-252AA	e3	10	260	7.6 pF
LSIC1MO170T0750	Littelfuse
MTI85W100GC	Littelfuse																																		NOT SPECIFIED	NOT SPECIFIED
CPC3902ZTR	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	DEPLETION MODE	1	.4 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		110 Cel	SILICON	-55 Cel		2.5 ohm		DUAL	R-PDSO-G4		DRAIN							9.5 pF
FMD40-06KC	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1				5	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.07 ohm	38 A	SINGLE	R-PSIP-T5		ISOLATED		HIGH RELIABILITY						UL RECOGNIZED
IXBL64N250	Littelfuse																	Insulated Gate BIP Transistors													Not Qualified
IXFA130N10T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	360 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	300 A	800 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel	Matte Tin (Sn)	.0101 ohm	130 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AB	e3	10	260	133 pF
IXFA4N85X	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	850 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	125 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.0025 ohm	3.5 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AB	e3	10	260	5 pF
IXFA80N25X3	Littelfuse																							MATTE TIN					1					e3	10	260
IXFA90N20X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	390 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	220 A	1500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.0128 ohm	90 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AB	e3	10	260	4 pF
IXFB210N20P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1500 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	600 A	4000 mJ	210 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Tin/Silver/Copper (Sn/Ag/Cu)	.0105 ohm	210 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED		e1	NOT SPECIFIED	NOT SPECIFIED
IXFB30N120P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	1200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	75 A	2000 mJ	30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Tin/Silver/Copper (Sn/Ag/Cu)	.35 ohm	30 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED		e1	NOT SPECIFIED	NOT SPECIFIED
IXFB90N85X	Littelfuse
IXFH120N15P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	260 A	2000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.016 ohm	120 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE ENERGY RATED	TO-247AD	e3	10	260
IXFH120N20P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	714 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A	2000 mJ	120 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel	MATTE TIN	.022 ohm	120 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247AD	e3	10	260	265 pF
IXFH120N30X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	735 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	280 A	2000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.011 ohm	120 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247				3 pF
IXFH12N80P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	800 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.85 ohm	12 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247AD	e3	10	260
IXFH12N90	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A		12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON		MATTE TIN	.9 ohm	12 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247AD	e3	10	260
IXFH140N20X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	480 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	250 A	1700 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.0096 ohm	140 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247				4.6 pF
IXFH150N17T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	880 W	PLASTIC/EPOXY	SWITCHING	175 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	400 A	1000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel	MATTE TIN	.012 ohm	150 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247AD	e3	10	260	136 pF
IXFH150N25X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	735 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A	1800 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.009 ohm	150 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247				1.8 pF
IXFH150N30X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	400 A	2000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.0083 ohm	150 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247				1.7 pF
IXFH15N100P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	543 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	500 mJ	15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.76 ohm	15 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247	e3	10	260
IXFH170N10P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	715 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	350 A	2000 mJ	170 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.009 ohm	170 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247AD	e3	10	260
IXFH20N100P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	660 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	50 A	800 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.57 ohm	20 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247AD	e3	10	260
IXFH20N85X	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	540 W	PLASTIC/EPOXY	SWITCHING	850 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	50 A	800 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.33 ohm	20 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247				24 pF
IXFH220N20X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	500 A	2500 mJ	220 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.0062 ohm	220 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247				9 pF
IXFH26N100X	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	860 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	52 A	2000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.32 ohm	26 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247				30 pF
IXFH30N60X	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	500 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	1000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.155 ohm	30 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247				14 pF
IXFH40N50Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A	2 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.14 ohm	40 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247AD	e3	10	260
IXFH42N50P2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	830 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	126 A	1400 mJ	42 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.145 ohm	42 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247	e3	10	260
IXFH50N20	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A		50 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON		MATTE TIN	.045 ohm	50 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247	e3	10	260
IXFH50N30Q3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	690 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	150 A	1500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.08 ohm	50 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247AD	e3	10	260	60 pF
IXFH50N50P3	Littelfuse																							MATTE TIN										e3	10	260
IXFH56N30X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	320 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	112 A	700 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.027 ohm	56 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247				3 pF
IXFH58N20	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	232 A		58 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON	-55 Cel	MATTE TIN	.04 ohm	58 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247	e3	10	260
IXFH60N60X2A	Littelfuse
IXFH7N100P	Littelfuse	N-CHANNEL	SINGLE	NO	300 W							1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			MATTE TIN		7 A								e3	10	260
IXFJ26N50P3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	180 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	78 A	300 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.295 ohm	14 A	SINGLE	R-PSFM-T3		ISOLATED		AVALANCHE RATED	TO-247				8 pF
IXFK140N20P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	280 A	4000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		TIN SILVER COPPER	.018 ohm	140 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-264AA	e1	10	260
IXFK170N20T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1150 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	470 A	3000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.011 ohm	170 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	135 pF
IXFK180N07	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	568 W	PLASTIC/EPOXY	SWITCHING	70 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	720 A	3000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.006 ohm	180 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-264AA				2500 pF
IXFK180N15P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	380 A	4000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		TIN SILVER COPPER	.011 ohm	180 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-264AA	e1	10	260
IXFK20N120	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	1200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	2000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN SILVER COPPER	.75 ohm	20 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-264AA	e1	10	260
IXFK220N20X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	890 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	500 A	2500 mJ	220 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.0062 ohm	220 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-264AA				9 pF
IXFK250N10P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	700 A	3000 mJ	250 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		TIN SILVER COPPER	.0065 ohm	250 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-264AA	e1	10	260
IXFK26N90	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	560 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	104 A	3000 mJ	26 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.3 ohm	26 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-264		NOT SPECIFIED	NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.