Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
50 W |
PLASTIC/EPOXY |
SWITCHING |
1000 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.25 A |
50 mJ |
.5 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
30 ohm |
.5 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
80 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 A |
150 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.85 ohm |
4 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-220AB |
.8 pF |
||||||||||||||||||||||
|
Littelfuse |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
298 W |
PLASTIC/EPOXY |
SWITCHING |
85 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
300 A |
1000 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.013 ohm |
96 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-220AB |
460 pF |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
150 A |
5000 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.14 ohm |
60 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e1 |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
3400 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN SILVER COPPER |
.19 ohm |
44 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-264AA |
e1 |
10 |
260 |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1500 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
275 A |
3000 mJ |
4 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.056 ohm |
90 A |
UPPER |
R-PUFM-X4 |
ISOLATED |
AVALANCHE RATED |
8 pF |
UL RECOGNIZED |
||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
960 W |
PLASTIC/EPOXY |
AMPLIFIER |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
150 A |
3000 mJ |
60 A |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.1 ohm |
60 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
AVALANCHE RATED |
172 pF |
|||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
800 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
900 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.0055 ohm |
220 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
AVALANCHE RATED |
TO-268AA |
5.4 pF |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
170 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
50 A |
300 mJ |
36 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.045 ohm |
36 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
AVALANCHE RATED |
TO-252AA |
e3 |
10 |
260 |
1.2 pF |
||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
1500 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.2 ohm |
20 A |
SINGLE |
R-PSIP-T3 |
ISOLATED |
Not Qualified |
AVALANCHE RATED |
e1 |
10 |
260 |
UL RECOGNIZED |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1040 W |
PLASTIC/EPOXY |
AMPLIFIER |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
500 A |
5000 mJ |
200 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN SILVER COPPER |
.011 ohm |
200 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-264AA |
e1 |
10 |
260 |
610 pF |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
SWITCHING |
500 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
95 A |
8 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
325 W |
150 Cel |
SILICON |
SILVER |
.12 ohm |
35 A |
UPPER |
R-XUFM-X8 |
ISOLATED |
Not Qualified |
BRIDGE RECTIFIER AVAILABLE |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
280 A |
4000 mJ |
4 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
NICKEL |
.018 ohm |
115 A |
UPPER |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
UL RECOGNIZED |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
SWITCHING |
100 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1220 A |
4 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.00125 ohm |
1220 A |
UPPER |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
500 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
192 A |
48 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
500 W |
150 Cel |
SILICON |
TIN SILVER COPPER |
.1 ohm |
48 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-264 |
e1 |
10 |
260 |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
900 W |
PLASTIC/EPOXY |
SWITCHING |
250 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
500 A |
5000 mJ |
4 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.0129 ohm |
168 A |
UPPER |
R-PUFM-X4 |
ISOLATED |
AVALANCHE RATED |
47 pF |
UL RECOGNIZED |
||||||||||||||||||||||
|
Littelfuse |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
300 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
96 A |
1000 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) |
.13 ohm |
32 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
AVALANCHE RATED |
TO-263AA |
e3 |
10 |
260 |
105 pF |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
800 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
150 A |
5000 mJ |
62 A |
4 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL |
.1 ohm |
62 A |
UPPER |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
830 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
320 A |
1000 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.016 ohm |
130 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-247AD |
e3 |
10 |
260 |
122 pF |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
715 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
350 A |
2000 mJ |
170 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.009 ohm |
170 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-268AA |
e3 |
10 |
260 |
||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1040 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
125 A |
1000 mJ |
50 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.16 ohm |
50 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-247AD |
e3 |
10 |
260 |
2.5 pF |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
360 W |
PLASTIC/EPOXY |
300 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
208 A |
1500 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.06 ohm |
52 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-247AD |
e3 |
10 |
260 |
200 pF |
|||||||||||||||||||
|
Littelfuse |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
96 A |
1000 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.13 ohm |
32 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-220AB |
105 pF |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.1 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
FLAT |
RECTANGULAR |
DEPLETION MODE |
1 |
1 A |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
125 Cel |
SILICON |
110 ns |
-55 Cel |
200 ns |
1 ohm |
SINGLE |
R-PSSO-F3 |
DRAIN |
|||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1890 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
330 A |
2000 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.039 ohm |
132 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
AVALANCHE RATED |
12 pF |
|||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
417 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
480 A |
3000 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.0195 ohm |
105 A |
SINGLE |
R-PSIP-T3 |
ISOLATED |
AVALANCHE RATED |
1000 pF |
UL RECOGNIZED |
|||||||||||||||||||||||
Littelfuse |
||||||||||||||||||||||||||||||||||||||||||||||||||
|
Littelfuse |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
300 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
90 A |
1500 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) |
.11 ohm |
36 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
AVALANCHE RATED |
TO-263AA |
e3 |
10 |
260 |
100 pF |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
225 A |
1500 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.024 ohm |
96 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-247AD |
e3 |
10 |
260 |
||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
560 W |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
136 A |
3000 mJ |
34 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.24 ohm |
34 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-264 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
35 A |
750 mJ |
16 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.4 ohm |
16 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e3 |
|||||||||||||||||||
|
Littelfuse |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
40 A |
3 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
1 ohm |
10 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-247 |
e3 |
10 |
260 |
157 pF |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
PLASTIC/EPOXY |
2500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 A |
1.5 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
40 ohm |
1.5 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-247AD |
e3 |
10 |
260 |
||||||||||||||||||||
|
Littelfuse |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
298 W |
PLASTIC/EPOXY |
SWITCHING |
65 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
360 A |
1000 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.01 ohm |
120 A |
SINGLE |
R-PSFM-T4 |
DRAIN |
AVALANCHE RATED |
TO-220AB |
505 pF |
||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
540 W |
PLASTIC/EPOXY |
AMPLIFIER |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
2000 mJ |
30 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.24 ohm |
30 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
AVALANCHE RATED |
TO-268AA |
130 pF |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN THERMISTOR |
NO |
PLASTIC/EPOXY |
SWITCHING |
100 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
680 A |
9 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.0018 ohm |
680 A |
UPPER |
R-PUFM-X9 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.4 W |
PLASTIC/EPOXY |
SWITCHING |
250 V |
FLAT |
RECTANGULAR |
DEPLETION MODE |
1 |
.6 A |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
125 Cel |
SILICON |
55 ns |
-55 Cel |
105 ns |
10 ohm |
SINGLE |
R-PSSO-F3 |
DRAIN |
40 pF |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1390 W |
PLASTIC/EPOXY |
SWITCHING |
300 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
440 A |
5000 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN SILVER COPPER |
.019 ohm |
160 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-264AA |
e1 |
10 |
260 |
45 pF |
||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
890 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
160 A |
3000 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.038 ohm |
80 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
AVALANCHE RATED |
TO-268AA |
1.6 pF |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
660 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
96 A |
1500 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.065 ohm |
48 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-247 |
e3 |
10 |
260 |
6.4 pF |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
55 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 A |
100 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
2.3 ohm |
2 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
AVALANCHE RATED |
TO-252AA |
e3 |
10 |
260 |
.7 pF |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1000 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
800 A |
1500 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0035 ohm |
320 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-247AD |
e3 |
10 |
260 |
450 pF |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
715 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
350 A |
2000 mJ |
170 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN SILVER COPPER |
.009 ohm |
170 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-264AA |
e1 |
10 |
260 |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
83 W |
PLASTIC/EPOXY |
2500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.6 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
450 ohm |
.2 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-247 |
e3 |
10 |
260 |
3 pF |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
695 W |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.064 ohm |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-247 |
e3 |
10 |
260 |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
125 W |
PLASTIC/EPOXY |
SWITCHING |
1200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 A |
200 mJ |
2.4 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
7.5 ohm |
2.4 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-247AD |
e3 |
10 |
260 |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
250 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
1000 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.035 ohm |
82 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-264AA |
e1 |
10 |
260 |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
650 W |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
55 A |
1500 mJ |
24 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.4 ohm |
24 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-247AD |
e3 |
10 |
260 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.