Littelfuse Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IXTP05N100P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1.25 A

50 mJ

.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

30 ohm

.5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

IXTP4N65X2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8 A

150 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.85 ohm

4 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

.8 pF

IXTP96P085T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

PLASTIC/EPOXY

SWITCHING

85 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.013 ohm

96 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

460 pF

IXFB60N80P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

150 A

5000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.14 ohm

60 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

IXFK44N80P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

3400 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.19 ohm

44 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264AA

e1

10

260

IXFN110N60P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1500 W

PLASTIC/EPOXY

SWITCHING

600 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

275 A

3000 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.056 ohm

90 A

UPPER

R-PUFM-X4

ISOLATED

AVALANCHE RATED

8 pF

UL RECOGNIZED

IXTX60N50L2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

960 W

PLASTIC/EPOXY

AMPLIFIER

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

150 A

3000 mJ

60 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.1 ohm

60 A

SINGLE

R-PSIP-T3

DRAIN

AVALANCHE RATED

172 pF

IXTT220N20X4HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

800 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

900 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0055 ohm

220 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

TO-268AA

5.4 pF

IXFY36N20X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

170 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

50 A

300 mJ

36 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.045 ohm

36 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-252AA

e3

10

260

1.2 pF

IXFR36N60P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

1500 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.2 ohm

20 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

e1

10

260

UL RECOGNIZED

IXTK200N10L2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1040 W

PLASTIC/EPOXY

AMPLIFIER

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

500 A

5000 mJ

200 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.011 ohm

200 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-264AA

e1

10

260

610 pF

VUM24-05N

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

95 A

8

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

325 W

150 Cel

SILICON

SILVER

.12 ohm

35 A

UPPER

R-XUFM-X8

ISOLATED

Not Qualified

BRIDGE RECTIFIER AVAILABLE

e4

NOT SPECIFIED

NOT SPECIFIED

IXFN140N20P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

280 A

4000 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

NICKEL

.018 ohm

115 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

UL RECOGNIZED

VMO1200-01F

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

1220 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.00125 ohm

1220 A

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXFK48N50

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

192 A

48 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

500 W

150 Cel

SILICON

TIN SILVER COPPER

.1 ohm

48 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264

e1

10

260

IXFN180N25T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

900 W

PLASTIC/EPOXY

SWITCHING

250 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

500 A

5000 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0129 ohm

168 A

UPPER

R-PUFM-X4

ISOLATED

AVALANCHE RATED

47 pF

UL RECOGNIZED

IXTA32P20T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

96 A

1000 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.13 ohm

32 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AA

e3

10

260

105 pF

IXTN62N50L

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

800 W

PLASTIC/EPOXY

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

150 A

5000 mJ

62 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.1 ohm

62 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

UL RECOGNIZED

IXTH130N20T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

830 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.016 ohm

130 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

122 pF

IXTT170N10P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

715 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

350 A

2000 mJ

170 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.009 ohm

170 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-268AA

e3

10

260

IXFH50N60P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1040 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

125 A

1000 mJ

50 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.16 ohm

50 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

2.5 pF

IXFH52N30Q

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

360 W

PLASTIC/EPOXY

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

208 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.06 ohm

52 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

200 pF

IXTP32P20T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

96 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.13 ohm

32 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

105 pF

CPC3701CTR

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.1 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

DEPLETION MODE

1

1 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

110 ns

-55 Cel

200 ns

1 ohm

SINGLE

R-PSSO-F3

DRAIN

IXFB132N50P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1890 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

330 A

2000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.039 ohm

132 A

SINGLE

R-PSIP-T3

DRAIN

AVALANCHE RATED

12 pF

IXFR120N20

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

417 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

3000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0195 ohm

105 A

SINGLE

R-PSIP-T3

ISOLATED

AVALANCHE RATED

1000 pF

UL RECOGNIZED

IXFT120N30X3HV

Littelfuse

IXTA36P15P

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

90 A

1500 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.11 ohm

36 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AA

e3

10

260

100 pF

IXFH96N20P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

225 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.024 ohm

96 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AD

e3

10

260

IXFK34N80

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

560 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

136 A

3000 mJ

34 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.24 ohm

34 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264

NOT SPECIFIED

NOT SPECIFIED

IXFP16N50P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

35 A

750 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.4 ohm

16 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e3

IXTH10P60

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

3 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

1 ohm

10 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

e3

10

260

157 pF

IXTH1N250

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

2500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

6 A

1.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

40 ohm

1.5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AD

e3

10

260

IXTP120P065T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

PLASTIC/EPOXY

SWITCHING

65 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

360 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.01 ohm

120 A

SINGLE

R-PSFM-T4

DRAIN

AVALANCHE RATED

TO-220AB

505 pF

IXTT30N60L2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

540 W

PLASTIC/EPOXY

AMPLIFIER

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

2000 mJ

30 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.24 ohm

30 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

TO-268AA

130 pF

VMM650-01F

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN THERMISTOR

NO

PLASTIC/EPOXY

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

680 A

9

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0018 ohm

680 A

UPPER

R-PUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CPC3710CTR

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

250 V

FLAT

RECTANGULAR

DEPLETION MODE

1

.6 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

55 ns

-55 Cel

105 ns

10 ohm

SINGLE

R-PSSO-F3

DRAIN

40 pF

IXFK160N30T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1390 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

440 A

5000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.019 ohm

160 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-264AA

e1

10

260

45 pF

IXFT80N65X2HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

890 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

160 A

3000 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.038 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

TO-268AA

1.6 pF

IXTH48N65X2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

660 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

96 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.065 ohm

48 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

e3

10

260

6.4 pF

IXTY2N65X2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

55 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

100 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

2.3 ohm

2 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-252AA

e3

10

260

.7 pF

IXFH320N10T2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1000 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

800 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0035 ohm

320 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

450 pF

IXFK170N10P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

715 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

350 A

2000 mJ

170 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN SILVER COPPER

.009 ohm

170 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264AA

e1

10

260

IXTH02N250

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

83 W

PLASTIC/EPOXY

2500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

.6 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

450 ohm

.2 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

10

260

3 pF

IXTH16N10D2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

695 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.064 ohm

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247

e3

10

260

IXTH2R4N120P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

6 A

200 mJ

2.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

7.5 ohm

2.4 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AD

e3

10

260

IXTK82N25P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.035 ohm

82 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264AA

e1

10

260

IXFH24N80P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

650 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

55 A

1500 mJ

24 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.4 ohm

24 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AD

e3

10

260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.