Littelfuse Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
MKE38P600LB-TRR	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2		1950 mJ		9	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.045 ohm	50 A	DUAL	R-PDSO-G9		ISOLATED		HIGH RELIABILITY						UL RECOGNIZED
IXTT2N170D2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	568 W	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	DEPLETION MODE	1				2	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	6.5 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-268AA	e3	10	260	80 pF
IXFA3N120	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	200 W	PLASTIC/EPOXY	SWITCHING	1200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	700 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	4.5 ohm	3 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AB	e3	10	260	25 pF
IXFH30N50P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	75 A	1200 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.2 ohm	30 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247AD	e3	10	260
IXFP26N30X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	170 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	250 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.066 ohm	26 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220AB				1 pF
IXTB30N100L	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	800 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	70 A	2000 mJ	30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.45 ohm	30 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED		e1
IXTH12N100L	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	25 A	1500 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.3 ohm	12 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247AD	e3	10	260
IXTH2N300P3HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	520 W	PLASTIC/EPOXY	SWITCHING	3000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6 A			3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			21 ohm	2 A	SINGLE	R-PSFM-T3		DRAIN			TO-247				42 pF
IXTH6N100D2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	AMPLIFIER		THROUGH-HOLE	RECTANGULAR	DEPLETION MODE	1				3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	2.2 ohm		SINGLE	R-PSFM-T3		DRAIN			TO-247AD	e3	10	260	41 pF
IXTK210P10T	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1040 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	800 A	3000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN SILVER COPPER	.0075 ohm	210 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	1100 pF
IXTK400N15X4	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1500 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	900 A	3000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0031 ohm	400 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-264AA				8 pF
IXTN22N100L	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	1000 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	50 A	1500 mJ	22 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL	.6 ohm	22 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified							UL RECOGNIZED
IXTN60N50L2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	735 W	PLASTIC/EPOXY	SWITCHING	500 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	150 A	3000 mJ		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.1 ohm	53 A	UPPER	R-PUFM-X4		ISOLATED							172 pF	UL RECOGNIZED
IXTP50N25T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	130 A	1500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.06 ohm	50 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220AB				60 pF
IXTT90P10P	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	462 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	225 A	2500 mJ	90 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.025 ohm	90 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-268AA	e3	10	260	510 pF
IXTY08N50D2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	DEPLETION MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	4.6 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	10	260	11 pF
MKE38P600LB	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2		1950 mJ		9	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.045 ohm	50 A	DUAL	R-PDSO-G9		ISOLATED		HIGH RELIABILITY						UL RECOGNIZED
IXFB100N50Q3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1560 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A	5000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.049 ohm	100 A	SINGLE	R-PSIP-T3		DRAIN							177 pF
IXFN100N50P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	500 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	250 A	5000 mJ		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL	.049 ohm	90 A	UPPER	R-PUFM-X4		ISOLATED	Not Qualified	AVALANCHE RATED						UL RECOGNIZED
IXFT50N50P3	Littelfuse																									MATTE TIN					1					e3	10	260
IXTY01N100	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	.4 A			2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	80 ohm	.1 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-252AA	e3	10	260	2 pF
CPC3708ZTR	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	DEPLETION MODE	1				4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		110 Cel	SILICON		-40 Cel			14 ohm	.005 A	DUAL	R-PDSO-G4	1	DRAIN		HIGH RELIABILITY			30	260
IXFH14N100Q2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A	2500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.95 ohm	14 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247AD	e3	10	260
IXFH20N60Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	1500 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.35 ohm	20 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247AD	e3
IXFK24N100	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	560 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	96 A	3000 mJ	24 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.39 ohm	24 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-264AA	e1
IXFN230N20T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1090 W	PLASTIC/EPOXY	SWITCHING	200 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	630 A	5000 mJ		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0075 ohm	220 A	UPPER	R-PUFM-X4		ISOLATED		AVALANCHE RATED					60 pF	UL RECOGNIZED
IXFN300N20X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	695 W	PLASTIC/EPOXY	SWITCHING	200 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	700 A	3500 mJ		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.0035 ohm	300 A	UPPER	R-PUFM-X4		ISOLATED		AVALANCHE RATED					3.2 pF	UL RECOGNIZED
IXFP16N50P3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	330 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	300 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.36 ohm	16 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220AB				7 pF
IXFP5N100PM	Littelfuse
IXFT170N25X3HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	890 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	2300 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.0074 ohm	170 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED	TO-268AA				1.6 pF
IXFX120N65X2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	3500 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.024 ohm	120 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE RATED	TO-247AD				5.5 pF
IXFX240N25X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	600 A	3000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.005 ohm	240 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE RATED					1.5 pF
IXTA02N250HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	2500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.6 A			2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				Matte Tin (Sn)	450 ohm	.2 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	10	260
IXTA08N100D2HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	DEPLETION MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	21 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	10	260	6.5 pF
IXTA6N100D2HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	DEPLETION MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	2.2 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-263AA	e3	10	260	41 pF
IXTA6N50D2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	DEPLETION MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.55 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-263AA	e3	10	260	64 pF
VUM33-05N	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		UNSPECIFIED	SWITCHING	500 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	130 A			8	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	595 W	150 Cel	SILICON				SILVER	.12 ohm	47 A	UPPER	R-XUFM-X8		ISOLATED	Not Qualified	BRIDGE RECTIFIER AVAILABLE		e4
IXFA10N80P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	600 mJ	10 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	1.1 ohm	10 A	SINGLE	R-PSSO-G3	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AA	e3	10	260
IXFH34N65X2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	540 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	68 A	1000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.1 ohm	34 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247	e3	10	260	2 pF
IXFN180N20	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	700 W	PLASTIC/EPOXY	SWITCHING	200 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	720 A	4000 mJ		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.0125 ohm	180 A	UPPER	R-PUFM-X4		ISOLATED		AVALANCHE RATED					600 pF	UL RECOGNIZED
IXFP56N30X3M	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	36 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	112 A	700 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.027 ohm	56 A	SINGLE	R-PSFM-T3		ISOLATED		AVALANCHE RATED	TO-220AB				3 pF
IXFX48N50Q	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	192 A	2500 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.1 ohm	48 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED		e1
IXTA3N50D2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	DEPLETION MODE	1				2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	1.5 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-263AA	e3	10	260	24 pF
CPC5603CTR	Littelfuse	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	415 V	GULL WING	RECTANGULAR	DEPLETION MODE	1				4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	14 ohm	.005 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	HIGH RELIABILITY		e3	30	260
IXFM35N30	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	METAL	SWITCHING	300 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	140 A			2	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	120 ns	-55 Cel	190 ns		.1 ohm	35 A	BOTTOM	O-MBFM-P2		DRAIN			TO-204AE				280 pF
IXFN400N15X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	695 W	PLASTIC/EPOXY	SWITCHING	150 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	900 A	3500 mJ		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.0025 ohm	400 A	UPPER	R-PUFM-X4		ISOLATED		AVALANCHE RATED					140 pF	UL RECOGNIZED
IXTH16N50D2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	695 W	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	DEPLETION MODE	1				3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.24 ohm		SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247	e3	10	260
IXTP76P10T	Littelfuse	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	298 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	230 A	1000 mJ	76 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.025 ohm	76 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220AB

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.